Inventor · disambiguated record
Shun-Liang Hsu
Also filed as: HSU SHUN-LIANG
47 granted patents·1 pending application·1,811 citations·filing 1991–2011
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG41HUANG TSUNG-YI2CHEN YEN-MING1TAIWAN SEMICONDUCTOR MANFACTUR1UNITED MICROELECTRONICS CORP1
Top patents by PatentIndex Score
48 records- 0196US7221021B2Method of forming high voltage devices with retrograde wellTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 22, 2007·120 cites·13 claims
- 0295US5757045ACMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantationTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted May 26, 1998·210 cites·7 claims
- 0392US6593220B1Elastomer plating mask sealed wafer level package methodTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jul 15, 2003·144 cites·37 claims
- 0491US7372104B2High voltage CMOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted May 13, 2008·22 cites·8 claims
- 0591US5597442AChemical/mechanical planarization (CMP) endpoint method using measurement of polishing pad temperatureTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Jan 28, 1997·129 cites·17 claims
- 0690US5691212AMOS device structure and integration methodTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Nov 25, 1997·123 cites·15 claims
- 0789US6756294B1Method for improving bump reliability for flip chip devicesTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jun 29, 2004·53 cites·26 claims
- 0889US5480828ADifferential gate oxide process by depressing or enhancing oxidation rate for mixed 3/5 V CMOS processTAIWAN SEMICONDUCTOR MFG·Filed 1994·Granted Jan 2, 1996·103 cites·16 claims
- 0988US5668024ACMOS device structure with reduced risk of salicide bridging and reduced resistance via use of a ultra shallow, junction extension, ion implantation processTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Sep 16, 1997·102 cites·34 claims
- 1086US8389341B2Lateral power MOSFET with high breakdown voltage and low on-resistanceHUANG TSUNG-YI·Filed 2011·Granted Mar 5, 2013·8 cites·14 claims
- 1186US5804488AMethod of forming a tungsten silicide capacitor having a high breakdown voltageTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Sep 8, 1998·73 cites·18 claims
- 1283US5872042AMethod for alignment mark regenerationTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Feb 16, 1999·70 cites·5 claims
- 1383US5702972AMethod of fabricating MOSFET devicesTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Dec 30, 1997·59 cites·20 claims
- 1482US8114745B2High voltage CMOS devicesWU CHEN-BAU·Filed 2010·Granted Feb 14, 2012·8 cites·24 claims
- 1582US7719064B2High voltage CMOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted May 18, 2010·8 cites·16 claims
- 1680US5705320ARecovery of alignment marks and laser marks after chemical-mechanical-polishingTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Jan 6, 1998·63 cites·12 claims
- 1780US5530418AMethod for shielding polysilicon resistors from hydrogen intrusionTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Jun 25, 1996·63 cites·22 claims
- 1880US5460993AMethod of making NMOS and PMOS LDD transistors utilizing thinned sidewall spacersTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Oct 24, 1995·48 cites·24 claims
- 1979US7521741B2Shielding structures for preventing leakages in high voltage MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 21, 2009·9 cites·20 claims
- 2078US7476591B2Lateral power MOSFET with high breakdown voltage and low on-resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 13, 2009·6 cites·20 claims
- 2178US7129559B2High voltage semiconductor device utilizing a deep trench structureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 31, 2006·20 cites·9 claims
- 2277US7989890B2Lateral power MOSFET with high breakdown voltage and low on-resistanceTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted Aug 2, 2011·6 cites·19 claims
- 2376US7122876B2Isolation-region configuration for integrated-circuit transistorTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 17, 2006·22 cites·20 claims
- 2476US5108937AMethod of making a recessed gate MOSFET device structureTAIWAN SEMICONDUCTOR MFG·Filed 1991·Granted Apr 28, 1992·51 cites·6 claims
- 2575US7482662B2High voltage semiconductor device utilizing a deep trench structureTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jan 27, 2009·5 cites·44 claims
- 2672US8129783B2Lateral power MOSFET with high breakdown voltage and low on-resistanceHUANG TSUNG-YI·Filed 2008·Granted Mar 6, 2012·4 cites·20 claims
- 2772US7279767B2Semiconductor structure with high-voltage sustaining capability and fabrication method of the sameTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Oct 9, 2007·5 cites·11 claims
- 2872US6338976B1Method for forming optoelectronic microelectronic fabrication with attenuated bond pad corrosionTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jan 15, 2002·23 cites·14 claims
- 2968US5338701AMethod for fabrication of w-polycide-to-poly capacitors with high linearityTAIWAN SEMICONDUCTOR MFG·Filed 1993·Granted Aug 16, 1994·33 cites·20 claims
- 3066US6348371B1Method of forming self-aligned twin wellsTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Feb 19, 2002·13 cites·19 claims
- 3164US5451529AMethod of making a real time ion implantation metal silicide monitorTAIWAN SEMICONDUCTOR MFG·Filed 1994·Granted Sep 19, 1995·37 cites·31 claims
- 3261US7384836B2Integrated circuit transistor insulating region fabrication methodTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Jun 10, 2008·2 cites·17 claims
- 3361US5858854AMethod for forming high contrast alignment marksTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Jan 12, 1999·27 cites·20 claims
- 3461US5510637AFabrication of w-polycide-to-poly capacitors with high linearityUNITED MICROELECTRONICS CORP·Filed 1995·Granted Apr 23, 1996·18 cites·20 claims
- 3560US5972777AMethod of forming isolation by nitrogen implant to reduce bird's beakTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 26, 1999·24 cites·14 claims
- 3659US5554558AMethod of making high precision w-polycide-to-poly capacitors in digital/analog processTAIWAN SEMICONDUCTOR MFG·Filed 1995·Granted Sep 10, 1996·25 cites·12 claims
- 3757US5866947APost tungsten etch bank anneal, to improve aluminum step coverageTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Feb 2, 1999·20 cites·3 claims
- 3856US8497584B2Method to improve bump reliability for flip chip deviceCHEN YEN-MING·Filed 2004·Granted Jul 30, 2013·6 cites·9 claims
- 3955US7521342B2Semiconductor structure with high-voltage sustaining capability and fabrication method of the sameTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Apr 21, 2009·1 cites·9 claims
- 4048US7079412B2Programmable MOS device formed by stressing polycrystalline siliconTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jul 18, 2006·5 cites·25 claims
- 4144US6291306B1Method of improving the voltage coefficient of resistance of high polysilicon resistorsTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 18, 2001·9 cites·15 claims
- 4243US5641710APost tungsten etch back anneal, to improve aluminum step coverageTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Jun 24, 1997·10 cites·22 claims
- 4342US7911022B2Isolation structure in field deviceTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Mar 22, 2011·0 cites·14 claims
- 4441US6100154AUsing LPCVD silicon nitride cap as a barrier to reduce resistance variations from hydrogen intrusion of high-value polysilicon resistorTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Aug 8, 2000·8 cites·20 claims
- 4540US5895257ALOCOS field oxide and field oxide process using silicon nitride spacersTAIWAN SEMICONDUCTOR MANFACTUR·Filed 1996·Granted Apr 20, 1999·9 cites·18 claims
- 4639US5726091AMethod of reducing bird's beak of field oxide using reoxidized nitrided pad oxide layerTAIWAN SEMICONDUCTOR MFG·Filed 1996·Granted Mar 10, 1998·7 cites·27 claims
- 4738US7714414B2Method and apparatus for polymer dielectric surface recovery by ion implantationTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 11, 2010·0 cites·28 claims
- 4835US2005112824A1Method of forming gate oxide layers with multiple thicknesses on substrateFiled 2003·Application pending·0 cites
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