Inventor · disambiguated record
Yi-Hsiung Lin
Also filed as: LIN YI-HSIUNG · LIN YI-HSIUNG S
63 granted patents·21 pending applications·252 citations·filing 1999–2025
98Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD57LIN YI HSIUNG8IBM6SAMSUNG ELECTRONICS CO LTD2UNITED MICROELECTRONICS CORP2
Top patents by PatentIndex Score
84 records- 0196US9691695B2Monolithic 3D integration inter-tier vias insertion scheme and associated layout structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jun 27, 2017·13 cites·20 claims
- 0295US11682590B2Methods of forming contact features in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 20, 2023·2 cites·20 claims
- 0394US11004855B2Buried metal track and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·7 cites·20 claims
- 0494US10170404B2Monolithic 3D integration inter-tier vias insertion scheme and associated layout structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 1, 2019·8 cites·20 claims
- 0594US9564363B1Method of forming butted contactTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 7, 2017·12 cites·20 claims
- 0693US10672665B2Fin field effect transistor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 2, 2020·6 cites·20 claims
- 0793US10446555B2Buried metal track and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 15, 2019·7 cites·20 claims
- 0891US11393815B2Transistors with varying width nanosheetTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 19, 2022·5 cites·20 claims
- 0991US10734321B2Integrated circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 4, 2020·6 cites·20 claims
- 1089US11127631B2Semiconductor device with contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 21, 2021·4 cites·20 claims
- 1189US10763365B2Metal rail conductors for non-planar semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·3 cites·20 claims
- 1288US11264204B2Implanter calibrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 1, 2022·2 cites·20 claims
- 1388US10763198B2Monolithic 3D integration inter-tier vias insertion scheme and associated layout structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Sep 1, 2020·3 cites·20 claims
- 1488US10504775B1Methods of forming metal layer structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 10, 2019·4 cites·20 claims
- 1588US9892224B2Method of forming masksTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 13, 2018·5 cites·20 claims
- 1688US7815173B2CoolerLIN YI-HSIUNG·Filed 2008·Granted Oct 19, 2010·16 cites·3 claims
- 1788US6593185B1Method of forming embedded capacitor structure applied to logic integrated circuitUNITED MICROELECTRONICS CORP·Filed 2002·Granted Jul 15, 2003·45 cites·6 claims
- 1888US2025316584A1Interconnect structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1985US11495687B2Metal rail conductors for non-planar semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·1 cites·20 claims
- 2085US2025293089A1Semiconductor device with contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2184US12113066B2Integrated circuit device including a power supply line and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 2284US10818473B2Implanter calibrationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 27, 2020·3 cites·20 claims
- 2384US7560222B2Si-containing polymers for nano-pattern device fabricationIBM·Filed 2006·Granted Jul 14, 2009·7 cites·1 claims
- 2483US11404320B2Fin field effect transistor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·1 cites·20 claims
- 2583US2024371868A1Buried metal track and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2683US2025324558A1Finfet sram cells with reduced fin pitchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2783US2024387530A1Integrated circuit device including a power supply line and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2882US12327765B2Semiconductor device with contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jun 10, 2025·0 cites·20 claims
- 2982US12107012B2Method for forming fin field effect transistor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 3082US2025241052A1Methods of forming contact features in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3181US12272605B2Methods of forming contact features in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Apr 8, 2025·0 cites·20 claims
- 3281US10727113B2Methods of forming metal layer structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·2 cites·20 claims
- 3381US2025285980A1Integrated circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3480US7488687B2Methods of forming electrical interconnect structures using polymer residues to increase etching selectivity through dielectric layersSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 10, 2009·7 cites·20 claims
- 3579US11791215B2Fin field effect transistor device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 3678US10134863B2Vertical semiconductor device structure and method of formingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Nov 20, 2018·3 cites·20 claims
- 3778US6750129B2Process for forming fusible linksINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jun 15, 2004·27 cites·27 claims
- 3877US12400950B2Interconnect structure and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Aug 26, 2025·0 cites·20 claims
- 3977US7553758B2Method of fabricating interconnections of microelectronic device using dual damascene processSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 30, 2009·7 cites·17 claims
- 4076US11081403B2Methods of forming contact features in field-effect transistorsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 3, 2021·1 cites·20 claims
- 4176US11063041B2Integrated circuit device including a power supply line and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 13, 2021·1 cites·20 claims
- 4276US2024379854A1Metal Rail Conductors For Non-Planar Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4375US12363879B2FinFET SRAM cells with reduced fin pitchTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 15, 2025·0 cites·20 claims
- 4475US11694927B2Formation method of semiconductor device with contact structuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jul 4, 2023·0 cites·20 claims
- 4574US12113132B2Metal rail conductors for non-planar semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 8, 2024·0 cites·20 claims
- 4674US11848327B2Integrated circuit device including a power supply line and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 19, 2023·0 cites·20 claims
- 4773US12125850B2Buried metal track and methods forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 22, 2024·0 cites·20 claims
- 4873US11557532B2Monolithic 3D integration inter-tier vias insertion scheme and associated layout structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 17, 2023·0 cites·20 claims
- 4969US10879176B2Integrated circuit structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·1 cites·20 claims
- 5068US11508661B2Integrated circuit and method of manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 22, 2022·0 cites·20 claims
Showing the top 50 of 84 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →