Inventor · disambiguated record
Frank R. Bryant
Also filed as: BRYANT FRANK · BRYANT FRANK R · BRYANT FRANK RANDOLPH
107 granted patents·1 pending application·1,914 citations·filing 1983–2010
99Inventor score
Files withSGS THOMSON MICROELECTRONICS56ST MICROELECTRONICS INC40HEWLETT PACKARD DEVELOPMENT CO6HEWLETT PACKARD CO1HEWLETT PACKARD DEVELPMENT COR1
Top patents by PatentIndex Score
108 records- 0195US7825917B2Apparatus and method for adjusting a display using an integrated ambient light sensorST MICROELECTRONICS INC·Filed 2006·Granted Nov 2, 2010·23 cites·20 claims
- 0293US6504226B1Thin-film transistor used as heating element for microreaction chamberST MICROELECTRONICS INC·Filed 2001·Granted Jan 7, 2003·59 cites·16 claims
- 0391US6271063B1Method of making an SRAM cell and structureST MICROELECTRONICS INC·Filed 2000·Granted Aug 7, 2001·90 cites·7 claims
- 0487US4771014AProcess for manufacturing LDD CMOS devicesSGS THOMSON MICROELECTRONICS·Filed 1987·Granted Sep 13, 1988·52 cites·5 claims
- 0586US6864140B2Thin-film transistor used as heating element for microreaction chamberST MICROELECTRONICS INC·Filed 2002·Granted Mar 8, 2005·28 cites·14 claims
- 0686US5260229AMethod of forming isolated regions of oxideSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Nov 9, 1993·86 cites·13 claims
- 0786US5006481AMethod of making a stacked capacitor DRAM cellSGS THOMSON MICROELECTRONICS·Filed 1990·Granted Apr 9, 1991·65 cites·5 claims
- 0885US5116776AMethod of making a stacked copacitor for dram cellSGS THOMSON MICROELECTRONICS·Filed 1989·Granted May 26, 1992·45 cites·15 claims
- 0984US5668028AMethod of depositing thin nitride layer on gate oxide dielectricSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Sep 16, 1997·40 cites·8 claims
- 1082US5187114AMethod of making SRAM cell and structure with polycrystalline P-channel load devicesSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Feb 16, 1993·46 cites·16 claims
- 1180US5742095AMethod of fabricating planar regions in an integrated circuitSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Apr 21, 1998·50 cites·8 claims
- 1279US6140684ASRAM cell structure with dielectric sidewall spacers and drain and channel regions defined along sidewall spacersSTMICROELECTRONIC INC·Filed 1997·Granted Oct 31, 2000·56 cites·18 claims
- 1378US7666798B2Method of making a micro-fluidic structureST MICROELECTRONICS INC·Filed 2006·Granted Feb 23, 2010·6 cites·14 claims
- 1477US7056795B2Thin-film transistor used as heating element for microreaction chamberST MICROELECTRONICS INC·Filed 2005·Granted Jun 6, 2006·5 cites·12 claims
- 1573US6091082AElectrostatic discharge protection for integrated circuit sensor passivationST MICROELECTRONICS INC·Filed 1998·Granted Jul 18, 2000·63 cites·33 claims
- 1672US5250456AMethod of forming an integrated circuit capacitor dielectric and a capacitor formed therebySGS THOMSON MICROELECTRONICS·Filed 1991·Granted Oct 5, 1993·50 cites·17 claims
- 1771US5972776AMethod of forming a planar isolation structure in an integrated circuitST MICROELECTRONICS INC·Filed 1995·Granted Oct 26, 1999·40 cites·25 claims
- 1870US7505194B2Method and system to automatically correct projected image defectsST MICROELECTRONICS INC·Filed 2005·Granted Mar 17, 2009·5 cites·22 claims
- 1969US4508815ARecessed metallizationMOSTEK CORP·Filed 1983·Granted Apr 2, 1985·30 cites·4 claims
- 2068US5710453ATransistor structure and method for making sameSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Jan 20, 1998·18 cites·13 claims
- 2168US5057463AThin oxide structure and methodSGS THOMSON MICROELECTRONICS·Filed 1990·Granted Oct 15, 1991·42 cites·12 claims
- 2267US5914518AMethod of forming a metal contact to landing pad structure in an integrated circuitST MICROELECTRONICS INC·Filed 1996·Granted Jun 22, 1999·22 cites·15 claims
- 2367US5705427AMethod of forming a landing pad structure in an integrated circuitSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Jan 6, 1998·30 cites·33 claims
- 2467US5204279AMethod of making SRAM cell and structure with polycrystalline p-channel load devicesSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Apr 20, 1993·28 cites·18 claims
- 2566US6610555B1Selectively doped electrostatic discharge layer for an integrated circuit sensorST MICROELECTRONICS INC·Filed 2000·Granted Aug 26, 2003·13 cites·22 claims
- 2666US6188056B1Solid state optical imaging pixel with resistive loadST MICROELECTRONICS INC·Filed 1998·Granted Feb 13, 2001·31 cites·27 claims
- 2766US5702979AMethod of forming a landing pad structure in an integrated circuitSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Dec 30, 1997·19 cites·35 claims
- 2865US6132032AThin-film print head for thermal ink-jet printersHEWLETT PACKARD CO·Filed 1999·Granted Oct 17, 2000·21 cites·17 claims
- 2965US5894160AMethod of forming a landing pad structure in an integrated circuitST MICROELECTRONICS INC·Filed 1996·Granted Apr 13, 1999·18 cites·18 claims
- 3065US5426065AMethod of making transistor devices in an SRAM cellSGS THOMSON MICROELECTRONICS·Filed 1993·Granted Jun 20, 1995·25 cites·4 claims
- 3164US6740536B2Devices and methods for integrated circuit manufacturingHEWLETT PACKARD DEVELPMENT COR·Filed 2001·Granted May 25, 2004·10 cites·6 claims
- 3264US5811865ADielectric in an integrated circuitST MICROELECTRONICS INC·Filed 1996·Granted Sep 22, 1998·28 cites·9 claims
- 3363US6180989B1Selectively doped electrostatic discharge layer for an integrated circuit sensorST MICROELECTRONICS INC·Filed 1998·Granted Jan 30, 2001·38 cites·16 claims
- 3462US6977185B2Printhead integrated circuitHEWLETT PACKARD DEVELOPMENT CO·Filed 2002·Granted Dec 20, 2005·7 cites·6 claims
- 3562US6498079B1Method for selective source diffusionST MICROELECTRONICS INC·Filed 2000·Granted Dec 24, 2002·10 cites·22 claims
- 3661US5309025ASemiconductor bond pad structure and methodSGS THOMSON MICROELECTRONICS·Filed 1992·Granted May 3, 1994·24 cites·12 claims
- 3760US7543917B2Integrated circuit and method for manufacturingHEWLETT PACKARD DEVELOPMENT CO·Filed 2006·Granted Jun 9, 2009·1 cites·28 claims
- 3859US6034410AMOSFET structure with planar surfaceST MICROELECTRONICS INC·Filed 1999·Granted Mar 7, 2000·23 cites·15 claims
- 3959US5310692AMethod of forming a MOSFET structure with planar surfaceSGS THOMSON MICROELECTRONICS·Filed 1992·Granted May 10, 1994·24 cites·31 claims
- 4058US5192707AMethod of forming isolated regions of oxideSGS THOMSON MICROELECTRONICS·Filed 1991·Granted Mar 9, 1993·26 cites·18 claims
- 4157US6188112B1High impedance load for integrated circuit devicesST MICROELECTRONICS INC·Filed 1995·Granted Feb 13, 2001·18 cites·24 claims
- 4256USRE36938EMethod of forming a landing pad structure in an integrated circuitST MICROELECTRONICS INC·Filed 1998·Granted Oct 31, 2000·12 cites·35 claims
- 4355US7704841B2Transistor structure and method for making sameST MICROELECTRONICS INC·Filed 2008·Granted Apr 27, 2010·0 cites·17 claims
- 4455US5956615AMethod of forming a metal contact to landing pad structure in an integrated circuitST MICROELECTRONICS INC·Filed 1994·Granted Sep 21, 1999·13 cites·29 claims
- 4555US5834360AMethod of forming an improved planar isolation structure in an integrated circuitST MICROELECTRONICS INC·Filed 1996·Granted Nov 10, 1998·19 cites·40 claims
- 4655US5736433ADouble mask hermetic passivation method providing enhanced resistance to moistureSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Apr 7, 1998·21 cites·22 claims
- 4755US5682052AMethod for forming isolated intra-polycrystalline silicon structureSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Oct 28, 1997·18 cites·7 claims
- 4855US5489797ALocal interconnect structureSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Feb 6, 1996·21 cites·7 claims
- 4955US5403777ASemiconductor bond pad structure and methodSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Apr 4, 1995·19 cites·13 claims
- 5055US4981813APad oxide protect sealed interface isolation processSGS THOMSON MICROELECTRONICS·Filed 1988·Granted Jan 1, 1991·20 cites·2 claims
Showing the top 50 of 108 patent records by PatentIndex Score.
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