Inventor · disambiguated record
Michel Haond
Also filed as: HAOND MICHEL
17 granted patents·785 citations·filing 1983–2019
95Inventor score
Files withST MICROELECTRONICS SA6FRANCE ETAT3FRANCE TELECOM3HAOND MICHEL2ST MICROELECTRONICS CROLLES 2 SAS2
Top patents by PatentIndex Score
17 records- 0197US4581520AHeat treatment machine for semiconductorsVU DUY PHACH·Filed 1983·Granted Apr 8, 1986·412 cites·11 claims
- 0286US6537894B2Process for fabricating a substrate of the silicon-on-insulator or silicon-on-nothing type and resulting deviceST MICROELECTRONICS SA·Filed 2001·Granted Mar 25, 2003·43 cites·19 claims
- 0384US6451669B2Method of forming insulated metal interconnections in integrated circuitsST MICROELECTRONICS SA·Filed 2000·Granted Sep 17, 2002·36 cites·7 claims
- 0479US6528399B1MOSFET transistor with short channel effect compensated by the gate materialST MICROELECTRONICS SA·Filed 2000·Granted Mar 4, 2003·29 cites·10 claims
- 0576US5604149AMethod of and device for isolating active areas of a semiconducor substrate by quasi-plane shallow trenchesFRANCE TELECOM·Filed 1995·Granted Feb 18, 1997·61 cites·9 claims
- 0675US5330617AMethod for etching integrated-circuit layers to a fixed depth and corresponding integrated circuitFRANCE TELECOM·Filed 1991·Granted Jul 19, 1994·60 cites·6 claims
- 0773US10903423B2Phase change memoryST MICROELECTRONICS CROLLES 2 SAS·Filed 2019·Granted Jan 26, 2021·1 cites·22 claims
- 0872US10510955B2Phase change memoryST MICROELECTRONICS CROLLES 2 SAS·Filed 2018·Granted Dec 17, 2019·1 cites·10 claims
- 0967US5089870ASoi mos transistor with a substrate-source connectionFRANCE ETAT·Filed 1990·Granted Feb 18, 1992·28 cites·24 claims
- 1064US4725561AProcess for the production of mutually electrically insulated monocrystalline silicon islands using laser recrystallizationHAOND MICHEL·Filed 1985·Granted Feb 16, 1988·32 cites·17 claims
- 1162US6555482B2Process for fabricating a MOS transistor having two gates, one of which is buried and corresponding transistorST MICROELECTRONICS SA·Filed 2001·Granted Apr 29, 2003·10 cites·20 claims
- 1259US6724660B2Integrated semiconductor memory device having quantum well buried in a substrateST MICROELECTRONICS SA·Filed 2001·Granted Apr 20, 2004·8 cites·25 claims
- 1358US4773964AProcess for the production of an oriented monocrystalline silicon film with localized defects on an insulating supportHAOND MICHEL·Filed 1986·Granted Sep 27, 1988·19 cites·17 claims
- 1444US5641704AMethod of isolating active areas of a semiconductor substrate by shallow trenches and narrow trenchesFRANCE TELECOM·Filed 1995·Granted Jun 24, 1997·14 cites·14 claims
- 1542US4678538AProcess for the production of an insulating support on an oriented monocrystalline silicon film with localized defectsFRANCE ETAT·Filed 1986·Granted Jul 7, 1987·6 cites·12 claims
- 1640US6812113B1Process for achieving intermetallic and/or intrametallic air isolation in an integrated circuit, and integrated circuit obtainedST MICROELECTRONICS SA·Filed 1999·Granted Nov 2, 2004·12 cites·18 claims
- 1740US5023197AManufacturing process of mesa SOI MOS transistorFRANCE ETAT·Filed 1990·Granted Jun 11, 1991·13 cites·8 claims
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