Inventor · disambiguated record
Charles M. Mckenna
Also filed as: MCKENNA CHARLES · MCKENNA CHARLES M
19 granted patents·808 citations·filing 1977–2001
96Inventor score
Top patents by PatentIndex Score
19 records- 0197US4158589ANegative ion extractor for a plasma etching apparatusIBM·Filed 1977·Granted Jun 19, 1979·72 cites·9 claims
- 0294US6998625B1Ion implanter having two-stage deceleration beamlineVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2000·Granted Feb 14, 2006·58 cites·57 claims
- 0393US6130436AAcceleration and analysis architecture for ion implanterVARIAN SEMICONDUCTOR EQUIPMENT·Filed 1998·Granted Oct 10, 2000·109 cites·32 claims
- 0492US4383177AMultipole implantation-isotope separation ion beam sourceIBM·Filed 1980·Granted May 10, 1983·41 cites·9 claims
- 0591US4118630AIon implantation apparatus with a cooled structure controlling the surface potential of a target surfaceIBM·Filed 1977·Granted Oct 3, 1978·31 cites·9 claims
- 0690US5136171ACharge neutralization apparatus for ion implantation systemVARIAN ASSOCIATES·Filed 1991·Granted Aug 4, 1992·83 cites·48 claims
- 0790US4135097AIon implantation apparatus for controlling the surface potential of a target surfaceIBM·Filed 1977·Granted Jan 16, 1979·36 cites·6 claims
- 0889US6313475B1Acceleration and analysis architecture for ion implanterVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2000·Granted Nov 6, 2001·39 cites·16 claims
- 0989US4687940AHybrid focused-flood ion beam system and methodHUGHES AIRCRAFT CO·Filed 1986·Granted Aug 18, 1987·46 cites·23 claims
- 1089US4556798AFocused ion beam columnHUGHES AIRCRAFT CO·Filed 1983·Granted Dec 3, 1985·35 cites·19 claims
- 1189US4183780APhoton enhanced reactive ion etchingIBM·Filed 1978·Granted Jan 15, 1980·79 cites·15 claims
- 1287US4757208AMasked ion beam lithography system and methodHUGHES AIRCRAFT CO·Filed 1986·Granted Jul 12, 1988·43 cites·25 claims
- 1381US4752692ALiquid metal ion sourceHUGHES AIRCRAFT CO·Filed 1985·Granted Jun 21, 1988·29 cites·6 claims
- 1475US6653642B2Methods and apparatus for operating high energy accelerator in low energy modeVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2001·Granted Nov 25, 2003·36 cites·31 claims
- 1574US4179312AFormation of epitaxial layers doped with conductivity-determining impurities by ion depositionIBM·Filed 1978·Granted Dec 18, 1979·28 cites·15 claims
- 1665US4686414AEnhanced wetting of liquid metal alloy ion sourcesHUGHES AIRCRAFT CO·Filed 1984·Granted Aug 11, 1987·13 cites·23 claims
- 1758US4149084AApparatus for maintaining ion bombardment beam under improved vacuum conditionIBM·Filed 1977·Granted Apr 10, 1979·9 cites·5 claims
- 1856US4629931ALiquid metal ion sourceHUGHES AIRCRAFT CO·Filed 1984·Granted Dec 16, 1986·7 cites·4 claims
- 1954US4151420AApparatus for the formation of epitaxial layers doped with conductivity-determining impurities by ion depositionIBM·Filed 1977·Granted Apr 24, 1979·14 cites·18 claims
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