Inventor · disambiguated record
Dong Il Bae
Also filed as: BAE DONG IL · BAE DONG-ÎL
73 granted patents·8 pending applications·272 citations·filing 2002–2025
98Inventor score
Top patents by PatentIndex Score
81 records- 0198US11393929B2Semiconductor devices and manufacturing methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 19, 2022·4 cites·20 claims
- 0298US10243040B1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 26, 2019·38 cites·20 claims
- 0397US11735629B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·3 cites·16 claims
- 0497US9929235B1Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 27, 2018·18 cites·20 claims
- 0597US9412849B1Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 9, 2016·25 cites·19 claims
- 0696US11894379B2Semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 6, 2024·2 cites·20 claims
- 0796US11367723B2Semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 21, 2022·3 cites·20 claims
- 0896US11222949B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 11, 2022·3 cites·20 claims
- 0996US10128379B2Semiconductor device having channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·14 cites·20 claims
- 1095US10872983B2Semiconductor devices and manufacturing methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 22, 2020·9 cites·16 claims
- 1195US10431585B2Semiconductor devices with multi-gate structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 1, 2019·9 cites·18 claims
- 1295US9972720B2Semiconductor device having a planar insulating layerSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 15, 2018·14 cites·20 claims
- 1394US11211495B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Dec 28, 2021·3 cites·19 claims
- 1494US10629740B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 21, 2020·8 cites·19 claims
- 1592US10749030B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 18, 2020·6 cites·17 claims
- 1691US11164943B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Nov 2, 2021·2 cites·20 claims
- 1791US10181510B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 15, 2019·7 cites·19 claims
- 1890US11309421B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 19, 2022·2 cites·20 claims
- 1990US11024628B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 1, 2021·5 cites·18 claims
- 2090US10978299B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 13, 2021·5 cites·20 claims
- 2190US10784344B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 22, 2020·4 cites·19 claims
- 2290US9525036B2Semiconductor device having gate electrode with spacers on fin structure and silicide layer filling the recessSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Dec 20, 2016·8 cites·15 claims
- 2389US11094800B2Integrated circuit device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 17, 2021·4 cites·20 claims
- 2489US10937787B2Semiconductor devices having different numbers of stacked channels in different regions and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Mar 2, 2021·6 cites·19 claims
- 2588US11133383B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 28, 2021·2 cites·16 claims
- 2688US9905559B2Semiconductor device having fin-type field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 27, 2018·3 cites·5 claims
- 2787US9443978B2Semiconductor device having gate-all-around transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 13, 2016·7 cites·20 claims
- 2887US2025357374A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 2987US2025357369A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3085US10756179B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 25, 2020·2 cites·20 claims
- 3183US12444697B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Oct 14, 2025·0 cites·11 claims
- 3283US10903324B2Semiconductor device including fin-FET and etch stop layersSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 26, 2021·3 cites·19 claims
- 3383US2025311224A1Semiconductor memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3482US12382653B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Aug 5, 2025·0 cites·15 claims
- 3582US2025248063A1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2025·Application pending·0 cites
- 3681US12199099B2Semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·10 claims
- 3780US12300751B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted May 13, 2025·0 cites·20 claims
- 3878US12119351B2Semiconductor device having fin-type field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 15, 2024·0 cites·20 claims
- 3978US9735153B2Semiconductor device having fin-type field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 15, 2017·2 cites·14 claims
- 4076US10714617B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 14, 2020·1 cites·19 claims
- 4176US7504295B2Methods for fabricating dynamic random access memory cells having laterally offset storage nodesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 17, 2009·6 cites·22 claims
- 4276US6730956B2Method for manufacturing the storage node of a capacitor of a semiconductor device and a storage node manufactured by the methodSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted May 4, 2004·21 cites·61 claims
- 4375US12051694B2Semiconductor devices having different numbers of stacked channels in different regionsSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jul 30, 2024·0 cites·18 claims
- 4475US11923456B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 5, 2024·0 cites·20 claims
- 4575US11784256B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 10, 2023·0 cites·17 claims
- 4675US11640973B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 2, 2023·0 cites·20 claims
- 4775US10090328B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 2, 2018·2 cites·18 claims
- 4874US11908952B2Semiconductor devices and manufacturing methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 20, 2024·0 cites·18 claims
- 4973US11637205B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Apr 25, 2023·0 cites·20 claims
- 5073US2024387527A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
Showing the top 50 of 81 patent records by PatentIndex Score.
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