Inventor · disambiguated record
Philip Chan
Also filed as: CHAN PHILIP · CHAN PHILIP C · CHAN PHILIP C H · CHAN PHILIP CHING HO
5 granted patents·9 pending applications·48 citations·filing 2001–2024
78Inventor score
Files withUNIV HONG KONG SCIENCE & TECHN4KYOCERA SLD LASER INC3CHAN PHILIP2UNIV CALIFORNIA2YOUNG WEI-TAI2
Top patents by PatentIndex Score
14 records- 0185US8211310B2Size-selective polymer systemYOUNG WEI-TAI·Filed 2010·Granted Jul 3, 2012·11 cites·20 claims
- 0284US7545008B2Complementary metal-oxide-semiconductor transistor structure for high density and high performance integrated circuitsUNIV HONG KONG SCIENCE & TECHN·Filed 2006·Granted Jun 9, 2009·13 cites·30 claims
- 0374US6727517B2Three dimensional integrated circuitsUNIV HONG KONG SCIENCE & TECHN·Filed 2001·Granted Apr 27, 2004·22 cites·23 claims
- 0473US9604196B2Size-selective hemocompatible polymer systemYOUNG WEI-TAI·Filed 2012·Granted Mar 28, 2017·2 cites·19 claims
- 0568US2025015558A1High power gallium and nitrogen containing laser diode devices with a modulation deviceKYOCERA SLD LASER INC·Filed 2024·Application pending·0 cites
- 0666US2023381391A1The Use of a Hemocompatible Porous Polymer Bread Sorbent for Removal of Pamps and DampsCYTOSORBENTS INC·Filed 2023·Application pending·0 cites
- 0764US2024380187A1High power gallium and nitrogen containing laser diode devices with improved mode qualityKYOCERA SLD LASER INC·Filed 2023·Application pending·0 cites
- 0862US12464802B2Manufacturable gallium and nitrogen containing single frequency laser diodeKYOCERA SLD LASER INC·Filed 2022·Granted Nov 4, 2025·0 cites·25 claims
- 0953US2024258771A1Iii-nitride-based devices grown on a thin template on thermally-decomposed materialUNIV CALIFORNIA·Filed 2022·Application pending·0 cites
- 1050US2025133866A1Iii-nitride-based high efficiency and high-power devices grown on or above a strain relaxed templateUNIV CALIFORNIA·Filed 2023·Application pending·0 cites
- 1139US2009065795A1Transparent conductive film on p-type layer for gan-based led and method for fabricating the sameCHAN PHILIP·Filed 2008·Application pending·0 cites
- 1239US2009057706A1Set of ohmic contact electrodes on both p-type and n-type layers for gan-based led and method for fabricating the sameCHAN PHILIP·Filed 2008·Application pending·0 cites
- 1339US2006177977A1Method for patterning fins and gates in a FinFET device using trimmed hard-mask capped with imaging layerUNIV HONG KONG SCIENCE & TECHN·Filed 2005·Application pending·0 cites
- 1439US2007148963A1Semiconductor devices incorporating carbon nanotubes and composites thereofUNIV HONG KONG SCIENCE & TECHN·Filed 2005·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →