Inventor · disambiguated record
Roger Loo
Also filed as: LOO ROGER
16 granted patents·4 pending applications·95 citations·filing 2004–2024
90Inventor score
Top patents by PatentIndex Score
20 records- 0190US8415209B2Method of manufacturing a complementary nanowire tunnel field effect transistor semiconductor deviceROOYACKERS RITA·Filed 2011·Granted Apr 9, 2013·28 cites·12 claims
- 0289US8384195B2Nanochannel device and method for manufacturing thereofIMEC·Filed 2011·Granted Feb 26, 2013·11 cites·11 claims
- 0385US6906400B2SiGe strain relaxed buffer for high mobility devices and a method of fabricating itKONINKL PHILIPS ELECTRONICS NV·Filed 2004·Granted Jun 14, 2005·40 cites·35 claims
- 0478US9177812B2Method of manufacturing low resistivity contacts on n-type germaniumMARTENS KOEN·Filed 2011·Granted Nov 3, 2015·6 cites·15 claims
- 0575US8962369B2Method for doping semiconductor structures and the semiconductor device thereofIMEC·Filed 2013·Granted Feb 24, 2015·3 cites·20 claims
- 0674US9478544B2Method for forming a germanium channel layer for an NMOS transistor device, NMOS transistor device and CMOS deviceIMEC VZW·Filed 2015·Granted Oct 25, 2016·2 cites·19 claims
- 0765US8507337B2Method for doping semiconductor structures and the semiconductor device thereofLOO ROGER·Filed 2009·Granted Aug 13, 2013·3 cites·25 claims
- 0863US9502415B2Method for providing an NMOS device and a PMOS device on a silicon substrate and silicon substrate comprising an NMOS device and a PMOS deviceIMEC VZW·Filed 2015·Granted Nov 22, 2016·1 cites·17 claims
- 0963US2025194131A1Method for Forming a Semiconductor DeviceIMEC VZW·Filed 2024·Application pending·0 cites
- 1057US9640411B2Method for manufacturing a transistor device comprising a germanium channel material on a silicon based substrate, and associated transistor deviceIMEC VZW·Filed 2015·Granted May 2, 2017·1 cites·13 claims
- 1150US9299563B2Method for forming a strained semiconductor structureIMEC VZW·Filed 2014·Granted Mar 29, 2016·0 cites·18 claims
- 1249US12336239B2Tensile strained semiconductor monocrystalline nanostructureIMEC VZW·Filed 2021·Granted Jun 17, 2025·0 cites·18 claims
- 1343US9263263B2Method for selective growth of highly doped group IV—Sn semiconductor materialsIMEC·Filed 2013·Granted Feb 16, 2016·0 cites·20 claims
- 1442US8709918B2Method for selective deposition of a semiconductor materialVINCENT BENJAMIN·Filed 2012·Granted Apr 29, 2014·0 cites·20 claims
- 1542US2008153266A1Method to improve the selective epitaxial growth (seg) processINTERUNIVERSITAIR MICROELETRON·Filed 2007·Application pending·0 cites
- 1638US8158451B2Method for manufacturing a junctionNGUYEN NGOC DUY·Filed 2009·Granted Apr 17, 2012·0 cites·18 claims
- 1738US2014020619A1Method for Growing a Monocrystalline Tin-Containing Semiconductor MaterialVINCENT BENJAMIN·Filed 2012·Application pending·0 cites
- 1836US8530339B2Method for direct deposition of a germanium layerVINCENT BENJAMIN·Filed 2012·Granted Sep 10, 2013·0 cites·16 claims
- 1931US8865582B2Method for producing a floating gate memory structureLOO ROGER·Filed 2011·Granted Oct 21, 2014·0 cites·13 claims
- 2028US2005093154A1Multiple gate semiconductor device and method for forming sameIMEC INTER UNI MICRO ELECTR·Filed 2004·Application pending·0 cites
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