Inventor · disambiguated record
Ulrich Klostermann
Also filed as: KLOSTERMANN ULRICH · KLOSTERMANN ULRICH KARL
43 granted patents·16 pending applications·546 citations·filing 2002–2024
98Inventor score
Top patents by PatentIndex Score
59 records- 0196US7838861B2Integrated circuits; methods for manufacturing an integrated circuit and memory moduleQIMONDA AG·Filed 2007·Granted Nov 23, 2010·53 cites·24 claims
- 0296US7751163B2Electric device protection circuit and method for protecting an electric deviceQIMONDA AG·Filed 2006·Granted Jul 6, 2010·59 cites·31 claims
- 0396US7697322B2Integrated circuits; method for manufacturing an integrated circuit; method for decreasing the influence of magnetic fields; memory moduleQIMONDA AG·Filed 2007·Granted Apr 13, 2010·41 cites·24 claims
- 0493US7855435B2Integrated circuit, method of manufacturing an integrated circuit, and memory moduleQIMONDA AG·Filed 2008·Granted Dec 21, 2010·29 cites·13 claims
- 0592US11475201B2Inclusion of stochastic behavior in source mask optimizationSYNOPSYS INC·Filed 2021·Granted Oct 18, 2022·2 cites·20 claims
- 0691US7092284B2MRAM with magnetic via for storage of information and field sensorALTIS SEMICONDUCTOR SNC·Filed 2004·Granted Aug 15, 2006·58 cites·22 claims
- 0788US7149105B2Magnetic tunnel junctions for MRAM devicesIBM·Filed 2004·Granted Dec 12, 2006·47 cites·74 claims
- 0886US8665629B2Condensed memory cell structure using a FinFETPARK HUMAN·Filed 2007·Granted Mar 4, 2014·26 cites·14 claims
- 0986US7112861B2Magnetic tunnel junction cap structure and method for forming the sameIBM·Filed 2004·Granted Sep 26, 2006·33 cites·6 claims
- 1085US7423282B2Memory structure and method of manufactureINFINEON TECHNOLOGIES AG·Filed 2006·Granted Sep 9, 2008·13 cites·20 claims
- 1184US7495434B2Magnetoresistive sensor element for sensing a magnetic fieldINFINEON TECHNOLOGIES AG·Filed 2006·Granted Feb 24, 2009·18 cites·41 claims
- 1283US8310866B2MRAM device structure employing thermally-assisted write operations and thermally-unassisted self-referencing operationsLEUSCHNER RAINER·Filed 2008·Granted Nov 13, 2012·10 cites·16 claims
- 1383US7893511B2Integrated circuit, memory module, and method of manufacturing an integrated circuitQIMONDA AG·Filed 2008·Granted Feb 22, 2011·14 cites·13 claims
- 1479US8063394B2Integrated circuitANDRES DIETER·Filed 2008·Granted Nov 22, 2011·12 cites·9 claims
- 1577US7902616B2Integrated circuit having a magnetic tunnel junction device and methodQIMONDA AG·Filed 2008·Granted Mar 8, 2011·7 cites·22 claims
- 1677US7411854B2System and method for controlling constant power dissipationINFINEON TECHNOLOGIES AG·Filed 2006·Granted Aug 12, 2008·10 cites·28 claims
- 1775US7903454B2Integrated circuit, memory cell array, memory module, and method of operating an integrated circuitQIMONDA AG·Filed 2008·Granted Mar 8, 2011·9 cites·18 claims
- 1875US7630231B2Hybrid memory cell for spin-polarized electron current induced switching and writing/reading process using such memory cellINFINEON TECHNOLOGIES AG·Filed 2007·Granted Dec 8, 2009·11 cites·25 claims
- 1973US7863700B2Magnetoresistive sensor with tunnel barrier and methodQIMONDA AG·Filed 2008·Granted Jan 4, 2011·5 cites·22 claims
- 2073US7602032B2Memory having cap structure for magnetoresistive junction and method for structuring the sameALTIS SEMICONDUCTOR SNC·Filed 2005·Granted Oct 13, 2009·8 cites·12 claims
- 2172US8105445B2Method and apparatus for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacksKLOSTERMANN ULRICH KARL·Filed 2008·Granted Jan 31, 2012·3 cites·26 claims
- 2268US7903452B2Magnetoresistive memory cellQIMONDA AG·Filed 2006·Granted Mar 8, 2011·7 cites·38 claims
- 2368US7532506B2Integrated circuit, cell arrangement, method of operating an integrated circuit, memory moduleQIMONDA AG·Filed 2007·Granted May 12, 2009·7 cites·25 claims
- 2467US7697313B2Integrated circuit, memory cell, memory module, method of operating an integrated circuit, and method of manufacturing a memory cellQIMONDA AG·Filed 2007·Granted Apr 13, 2010·6 cites·19 claims
- 2566US7075807B2Magnetic memory with static magnetic offset fieldALTIS SEMICONDUCTOR SNC·Filed 2004·Granted Jul 11, 2006·14 cites·19 claims
- 2666US2025076640A1Optical and manufacturing aware design flow for metasurfacesSYNOPSYS INC·Filed 2024·Application pending·0 cites
- 2764US7205596B2Adiabatic rotational switching memory element including a ferromagnetic decoupling layerINFINEON TECHNOLOGIES AG·Filed 2005·Granted Apr 17, 2007·3 cites·7 claims
- 2862US7088612B2MRAM with vertical storage element in two layer-arrangement and field sensorINFINEON TECHNOLOGIES AG·Filed 2004·Granted Aug 8, 2006·11 cites·27 claims
- 2961US7602637B2Integrated circuits; methods for operating an integrating circuit; memory modulesQIMONDA AG·Filed 2007·Granted Oct 13, 2009·4 cites·25 claims
- 3060US11914306B2Predicting defect rate based on lithographic model parametersSYNOPSYS INC·Filed 2020·Granted Feb 27, 2024·0 cites·20 claims
- 3160US11314171B2Lithography improvement based on defect probability distributions and critical dimension variationsSYNOPSYS INC·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 3260US7663198B2Magnetoresistive random access memory device with alternating liner magnetization orientationQIMONDA AG·Filed 2006·Granted Feb 16, 2010·1 cites·22 claims
- 3359US7081658B2Techniques for reducing Neel coupling in toggle switching semiconductor devicesINFINEON TECHNOLOGIES CORP·Filed 2004·Granted Jul 25, 2006·6 cites·21 claims
- 3457US8084759B2Integrated circuit including doped semiconductor line having conductive claddingKLOSTERMANN ULRICH·Filed 2007·Granted Dec 27, 2011·2 cites·25 claims
- 3556US11900042B2Stochastic-aware lithographic models for mask synthesisSYNOPSYS INC·Filed 2021·Granted Feb 13, 2024·0 cites·19 claims
- 3656US2024288686A1Photolithography mask generation for metalensSYNOPSYS INC·Filed 2024·Application pending·0 cites
- 3755US8470092B2Method and apparatus for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacksKLOSTERMANN ULRICH KARL·Filed 2008·Granted Jun 25, 2013·0 cites·17 claims
- 3852US7473656B2Method for fast and local anneal of anti-ferromagnetic (AF) exchange-biased magnetic stacksIBM·Filed 2003·Granted Jan 6, 2009·2 cites·1 claims
- 3951US7309617B2MRAM memory cell with a reference layer and method for fabricatingINFINEON TECHNOLOGIES AG·Filed 2003·Granted Dec 18, 2007·7 cites·7 claims
- 4051US7061787B2Field ramp down for pinned synthetic antiferromagnetINFINEON TECHNOLOGIES CORP·Filed 2004·Granted Jun 13, 2006·6 cites·20 claims
- 4150US7782577B2MRAM structure using sacrificial layer for anti-ferromagnet and method of manufactureINFINEON TECHNOLOGIES AG·Filed 2006·Granted Aug 24, 2010·0 cites·14 claims
- 4246US7075814B2Method for homogeneously magnetizing an exchange-coupled layer system of a digital magnetic memory location deviceINFINEON TECHNOLOGIES AG·Filed 2002·Granted Jul 11, 2006·2 cites·13 claims
- 4340US2009102015A1Integrated Circuit, Memory Cell Array, Memory Cell, Memory Module, Method of Operating an Integrated Circuit, and Method of Manufacturing an Integrated CircuitKLOSTERMANN ULRICH·Filed 2007·Application pending·0 cites
- 4440US2009072348A1Integrated Circuits; Methods for Manufacturing an Integrated Circuit and Memory ModuleKLOSTERMANN ULRICH·Filed 2007·Application pending·0 cites
- 4539US7751231B2Method and integrated circuit for determining the state of a resistivity changing memory cellQIMONDA AG·Filed 2008·Granted Jul 6, 2010·0 cites·15 claims
- 4639US2008203386A1Method of forming a patterned resist layer for patterning a semiconductor productKLOSTERMANN ULRICH·Filed 2007·Application pending·0 cites
- 4738US7715225B2Memory cell using spin induced switching effectsQIMONDA AG·Filed 2008·Granted May 11, 2010·0 cites·21 claims
- 4838US2007069296A1High-density high current device cellPARK HUMAN·Filed 2006·Application pending·0 cites
- 4938US2009218559A1Integrated Circuit, Memory Cell Array, Memory Module, and Method of Manufacturing an Integrated CircuitKLOSTERMANN ULRICH·Filed 2008·Application pending·0 cites
- 5037US7436700B2MRAM memory cell having a weak intrinsic anisotropic storage layer and method of producing the sameINFINEON TECHNOLOGIES AG·Filed 2007·Granted Oct 14, 2008·0 cites·28 claims
Showing the top 50 of 59 patent records by PatentIndex Score.
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