Inventor · disambiguated record
Douglas Walter Agnew
Also filed as: AGNEW DOUGLAS W · AGNEW DOUGLAS WALTER
12 granted patents·17 pending applications·1 citations·filing 2018–2024
80Inventor score
Files withLAM RES CORP29
Top patents by PatentIndex Score
29 records- 0172US10340136B1Minimization of carbon loss in ALD SiO2 deposition on hardmask filmsLAM RES CORP·Filed 2018·Granted Jul 2, 2019·1 cites·20 claims
- 0272US2024347337A1Low-k ald gap-fill methods and materialLAM RES CORP·Filed 2024·Application pending·0 cites
- 0368US12473633B2Plasma enhanced atomic layer deposition of silicon-containing filmsLAM RES CORP·Filed 2022·Granted Nov 18, 2025·0 cites·25 claims
- 0459US12020923B2Low-κ ALD gap-fill methods and materialLAM RES CORP·Filed 2019·Granted Jun 25, 2024·0 cites·18 claims
- 0559US10692717B2Minimization of carbon loss in ALD SiO2 deposition on hardmask filmsLAM RES CORP·Filed 2019·Granted Jun 23, 2020·0 cites·16 claims
- 0657US12431349B2In-situ control of film properties during atomic layer depositionLAM RES CORP·Filed 2020·Granted Sep 30, 2025·0 cites·9 claims
- 0755US12417943B2Reducing intralevel capacitance in semiconductor devicesLAM RES CORP·Filed 2021·Granted Sep 16, 2025·0 cites·20 claims
- 0854US2025207246A1Reducing capacitance in semiconductor devicesLAM RES CORP·Filed 2023·Application pending·0 cites
- 0953US2025062118A1High pressure plasma inhibitionLAM RES CORP·Filed 2022·Application pending·0 cites
- 1052US12157945B2Thermal atomic layer deposition of silicon-containing filmsLAM RES CORP·Filed 2020·Granted Dec 3, 2024·0 cites·21 claims
- 1151US12252782B2In-situ PECVD cap layerLAM RES CORP·Filed 2020·Granted Mar 18, 2025·0 cites·18 claims
- 1251US2024167153A1In-situ film annealing in substrate processingLAM RES CORP·Filed 2022·Application pending·0 cites
- 1349US12288685B2Modifying hydrophobicity of a wafer surface using an organosilicon precursorLAM RES CORP·Filed 2019·Granted Apr 29, 2025·0 cites·14 claims
- 1449US2025250666A1Lateral gap fillLAM RES CORP·Filed 2023·Application pending·0 cites
- 1549US2025166989A1Thermal film depositionLAM RES CORP·Filed 2023·Application pending·0 cites
- 1648US2025188609A1Seam-free and crack-free depositionLAM RES CORP·Filed 2023·Application pending·0 cites
- 1748US2025154644A1High pressure inert oxidation and in-situ annealing process to improve film seam quality and werLAM RES CORP·Filed 2023·Application pending·0 cites
- 1847US12087574B2Oxidative conversion in atomic layer deposition processesLAM RES CORP·Filed 2019·Granted Sep 10, 2024·0 cites·12 claims
- 1947US2023098270A1Precursors for high-temperature deposition of silicon-containing filmsLAM RES CORP·Filed 2021·Application pending·0 cites
- 2047US2025230546A1Selective control of multi-station processing chamber componentsLAM RES CORP·Filed 2022·Application pending·0 cites
- 2145US2023220544A1In-feature wet etch rate ratio reductionLAM RES CORP·Filed 2021·Application pending·0 cites
- 2245US2023087976A1Non-plasma enhanced deposition for recess etch matchingLAM RES CORP·Filed 2021·Application pending·0 cites
- 2344US12400880B2Apparatuses for uniform fluid delivery in a multi-station semiconductor processing chamberLAM RES CORP·Filed 2022·Granted Aug 26, 2025·0 cites·24 claims
- 2444US2025179638A1Showerhead assembly and substrate processing systems for improving deposition thickness uniformityLAM RES CORP·Filed 2022·Application pending·0 cites
- 2544US2025014893A1Atomic layer deposition seam reductionLAM RES CORP·Filed 2022·Application pending·0 cites
- 2642US2022384186A1Methods to enable seamless high quality gapfillLAM RES CORP·Filed 2020·Application pending·0 cites
- 2742US2021398780A1Method andd apparatus for atomic layer deposition or chemical vapor depositionLAM RES CORP·Filed 2019·Application pending·0 cites
- 2841US2023154754A1Loss prevention during atomic layer depositionLAM RES CORP·Filed 2021·Application pending·0 cites
- 2921USD1107670SShowerhead for a substrate processing systemLAM RES CORP·Filed 2022·Granted Dec 30, 2025·0 cites·1 claims
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