Inventor · disambiguated record
Kiyohiro Furutani
Also filed as: FURUTANI KIYOHIRO
126 granted patents·3 pending applications·3,872 citations·filing 1986–2021
99Inventor score
Files withMITSUBISHI ELECTRIC CORP98RENESAS TECH CORP11FURUTANI KIYOHIRO6MICRON TECHNOLOGY INC5ELPIDA MEMORY INC4
Top patents by PatentIndex Score
129 records- 0199US6816422B2Semiconductor memory device having multi-bit testing functionRENESAS TECH CORP·Filed 2002·Granted Nov 9, 2004·421 cites·7 claims
- 0299US5724366ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 3, 1998·438 cites·6 claims
- 0398US6417715B2Clock generation circuit generating internal clock of small variation in phase difference from external clock, and semiconductor memory device including such clock generation circuitMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jul 9, 2002·99 cites·17 claims
- 0497US6297624B1Semiconductor device having an internal voltage generating circuitMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 2, 2001·110 cites·15 claims
- 0596US6400621B2Semiconductor memory device and method of checking same for defectMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jun 4, 2002·78 cites·6 claims
- 0694US5668774ADynamic semiconductor memory device having fast operation mode and operating with low current consumptionMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 16, 1997·105 cites·19 claims
- 0794US5636163ARandom access memory with a plurality amplifier groups for reading and writing in normal and test modesMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jun 3, 1997·100 cites·12 claims
- 0894US4873669ARandom access memory device operable in a normal mode and in a test modeMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Oct 10, 1989·74 cites·9 claims
- 0992US5970507ASemiconductor memory device having a refresh-cycle program circuitMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Oct 19, 1999·102 cites·15 claims
- 1091US6201437B1Internal high voltage generation circuit capable of stably generating internal high voltage and circuit element thereforMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 13, 2001·49 cites·20 claims
- 1191US5936443APower-on reset signal generator for semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 10, 1999·73 cites·12 claims
- 1291US4829484ASemiconductor memory device having self-refresh functionMITSUBISHI ELECTRIC CORP·Filed 1988·Granted May 9, 1989·65 cites·8 claims
- 1390US8462560B2Semiconductor device, method for controlling the same, and semiconductor systemFURUTANI KIYOHIRO·Filed 2010·Granted Jun 11, 2013·12 cites·14 claims
- 1490US6492863B2Internal high voltage generation circuit capable of stably generating internal high voltage and circuit element thereforMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Dec 10, 2002·38 cites·5 claims
- 1590US5610550AIntermediate potential generator stably providing an internal voltage precisely held at a predeterminded intermediate potential level with reduced current consumptionMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Mar 11, 1997·85 cites·28 claims
- 1689US6551846B1Semiconductor memory device capable of correctly and surely effecting voltage stress accelerationMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Apr 22, 2003·48 cites·7 claims
- 1789US4947376ACharge-transfer sense amplifier for dram and operating method thereforMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Aug 7, 1990·55 cites·7 claims
- 1889US4922460ASemiconductor memory device with folded bit line structure suitable for high densityMITSUBISHI ELECTRIC CORP·Filed 1989·Granted May 1, 1990·58 cites·9 claims
- 1987US5844849ADynamic semiconductor memory device having fast operation mode and operating with low current consumptionMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 1, 1998·57 cites·14 claims
- 2087US5434533AReference voltage generating circuit temperature-compensated without addition of manufacturing step and semiconductor device using the sameMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Jul 18, 1995·69 cites·11 claims
- 2186US5953261ASemiconductor memory device having data input/output circuit of small occupied area capable of high-speed data input/outputMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Sep 14, 1999·55 cites·7 claims
- 2286US5673232ASemiconductor memory device operating stably under low power supply voltage with low power consumptionMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Sep 30, 1997·56 cites·10 claims
- 2385US8300480B2Semiconductor device having sense amplifiers supplied with an over-drive voltage in a normal mode and supplied with a step-down voltage in a refresh modeFURUTANI KIYOHIRO·Filed 2010·Granted Oct 30, 2012·10 cites·17 claims
- 2485US7940112B2Semiconductor deviceELPIDA MEMORY INC·Filed 2010·Granted May 10, 2011·10 cites·20 claims
- 2585US6753720B2Internal high voltage generation circuit capable of stably generating internal high voltage and circuit element thereforRENESAS TECH CORP·Filed 2002·Granted Jun 22, 2004·26 cites·9 claims
- 2685US6717887B1Semiconductor memory device having configuration for selecting desired delay locked loop clockRENESAS TECH CORP·Filed 2003·Granted Apr 6, 2004·37 cites·7 claims
- 2785US5673231ASemiconductor memory device in which leakage current from defective memory cell can be suppressed during standbyMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 30, 1997·62 cites·6 claims
- 2885US4860070ASemiconductor memory device comprising trench memory cellsMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Aug 22, 1989·51 cites·10 claims
- 2985US4849938ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Jul 18, 1989·46 cites·16 claims
- 3084US5877651ASemiconductor memory device that can have power consumption reducedMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Mar 2, 1999·48 cites·24 claims
- 3184US5793686ASemiconductor memory device having data input/output circuit of small occupied area capable of high-speed data input/outputMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Aug 11, 1998·49 cites·11 claims
- 3283US8362827B2Semiconductor device including transistors that exercise control to reduce standby currentELPIDA MEMORY INC·Filed 2010·Granted Jan 29, 2013·7 cites·17 claims
- 3382US10168233B2Semiconductor device including sensorMICRON TECHNOLOGY INC·Filed 2015·Granted Jan 1, 2019·2 cites·14 claims
- 3482US8995216B2Semiconductor device with refresh control circuitFURUTANI KIYOHIRO·Filed 2012·Granted Mar 31, 2015·6 cites·18 claims
- 3582US6962827B1Semiconductor device capable of shortening test time and suppressing increase in chip area, and method of manufacturing semiconductor integrated circuit deviceRENESAS TECH CORP·Filed 2003·Granted Nov 8, 2005·29 cites·10 claims
- 3681US8908457B2Semiconductor deviceFURUTANI KIYOHIRO·Filed 2012·Granted Dec 9, 2014·8 cites·8 claims
- 3781US4817056ASemiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Mar 28, 1989·40 cites·14 claims
- 3880US7542363B2Semiconductor memory device enhancing reliability in data readingRENESAS TECH CORP·Filed 2005·Granted Jun 2, 2009·11 cites·6 claims
- 3980US5305261ASemiconductor memory device and method of testing the sameMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Apr 19, 1994·45 cites·33 claims
- 4078US5586076ASemiconductor memory device permitting high speed data transfer and high density integrationMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Dec 17, 1996·40 cites·19 claims
- 4177US5487043ASemiconductor memory device having equalization signal generating circuitMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 23, 1996·40 cites·5 claims
- 4277US5012472ADynamic type semiconductor memory device having an error checking and correcting circuitMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Apr 30, 1991·54 cites·18 claims
- 4377US4939733ASyndrome generator for Hamming code and method for generating syndrome for Hamming codeMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Jul 3, 1990·28 cites·6 claims
- 4477US4788457ACMOS row decoder circuit for use in row and column addressingMITSUBISHI ELECTRIC CORP·Filed 1987·Granted Nov 29, 1988·23 cites·4 claims
- 4574US5867439ASemiconductor memory device having internal address converting function, whose test and layout are conducted easilyMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Feb 2, 1999·30 cites·6 claims
- 4673US7885132B2Semiconductor memory device enhancing reliability in data readingRENESAS ELECTRONICS CORP·Filed 2009·Granted Feb 8, 2011·7 cites·2 claims
- 4773US7268612B2Semiconductor device with pump circuitRENESAS TECH CORP·Filed 2007·Granted Sep 11, 2007·5 cites·2 claims
- 4871US6477105B2Semiconductor memory device with a hierarchical word line configuration capable of preventing leakage current in a sub-word line driverMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Nov 5, 2002·16 cites·11 claims
- 4971US5652730ASemiconductor memory device having hierarchical boosted power-line schemeMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 29, 1997·31 cites·19 claims
- 5070US9355705B2Semiconductor device, method for controlling the same, and semiconductor systemPS4 LUXCO SARL·Filed 2015·Granted May 31, 2016·2 cites·17 claims
Showing the top 50 of 129 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →