Inventor · disambiguated record
Hua-Shuang Kong
Also filed as: KONG HUA · KONG HUA-SHUANG
61 granted patents·4 pending applications·9,279 citations·filing 1987–2023
99Inventor score
Top patents by PatentIndex Score
65 records- 0199US7910945B2Nickel tin bonding system with barrier layer for semiconductor wafers and devicesCREE INC·Filed 2007·Granted Mar 22, 2011·209 cites·20 claims
- 0299US7791061B2External extraction light emitting diode based upon crystallographic faceted surfacesCREE INC·Filed 2006·Granted Sep 7, 2010·166 cites·42 claims
- 0399US6217662B1Susceptor designs for silicon carbide thin filmsCREE INC·Filed 1997·Granted Apr 17, 2001·383 cites·4 claims
- 0499US6120600ADouble heterojunction light emitting diode with gallium nitride active layerCREE INC·Filed 1998·Granted Sep 19, 2000·589 cites·7 claims
- 0599US5739554ADouble heterojunction light emitting diode with gallium nitride active layerCREE RESEARCH INC·Filed 1995·Granted Apr 14, 1998·848 cites·42 claims
- 0699US5416342ABlue light-emitting diode with high external quantum efficiencyCREE RESEARCH INC·Filed 1993·Granted May 16, 1995·533 cites·53 claims
- 0799US5200022AMethod of improving mechanically prepared substrate surfaces of alpha silicon carbide for deposition of beta silicon carbide thereon and resulting productCREE RESEARCH INC·Filed 1990·Granted Apr 6, 1993·702 cites·4 claims
- 0899US4946547AMethod of preparing silicon carbide surfaces for crystal growthCREE RESEARCH INC·Filed 1989·Granted Aug 7, 1990·750 cites·25 claims
- 0998US11901181B2Carrier-assisted method for parting crystalline material along laser damage regionWOLFSPEED INC·Filed 2021·Granted Feb 13, 2024·7 cites·27 claims
- 1098US6582986B2Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structuresCREE INC·Filed 2001·Granted Jun 24, 2003·164 cites·15 claims
- 1198US6201262B1Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlay structureCREE INC·Filed 1997·Granted Mar 13, 2001·604 cites·16 claims
- 1298US6187606B1Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structureCREE INC·Filed 1999·Granted Feb 13, 2001·484 cites·10 claims
- 1398US5523589AVertical geometry light emitting diode with group III nitride active layer and extended lifetimeCREE RESEARCH INC·Filed 1994·Granted Jun 4, 1996·1.1k cites·36 claims
- 1498US5338944ABlue light-emitting diode with degenerate junction structureCREE RESEARCH INC·Filed 1993·Granted Aug 16, 1994·475 cites·47 claims
- 1598US4912064AHomoepitaxial growth of alpha-SiC thin films and semiconductor devices fabricated thereonUNIV NORTH CAROLINA STATE·Filed 1987·Granted Mar 27, 1990·219 cites·21 claims
- 1697US6955977B2Single step pendeo-and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structuresCREE INC·Filed 2003·Granted Oct 18, 2005·84 cites·40 claims
- 1797US6812053B1Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structuresCREE INC·Filed 2000·Granted Nov 2, 2004·104 cites·29 claims
- 1897US5592501ALow-strain laser structures with group III nitride active layersCREE RESEARCH INC·Filed 1994·Granted Jan 7, 1997·281 cites·35 claims
- 1997US5119540AApparatus for eliminating residual nitrogen contamination in epitaxial layers of silicon carbide and resulting productCREE RESEARCH INC·Filed 1990·Granted Jun 9, 1992·138 cites·14 claims
- 2096US8525190B2Conformal gel layers for light emitting diodesDONOFRIO MATTHEW·Filed 2011·Granted Sep 3, 2013·22 cites·24 claims
- 2196US6906352B2Group III nitride LED with undoped cladding layer and multiple quantum wellCREE INC·Filed 2002·Granted Jun 14, 2005·168 cites·39 claims
- 2295US11024501B2Carrier-assisted method for parting crystalline material along laser damage regionCREE INC·Filed 2019·Granted Jun 1, 2021·11 cites·30 claims
- 2395US6530990B2Susceptor designs for silicon carbide thin filmsCREE INC·Filed 2001·Granted Mar 11, 2003·57 cites·9 claims
- 2495US6459100B1Vertical geometry ingan LEDCREE INC·Filed 1998·Granted Oct 1, 2002·201 cites·9 claims
- 2594US9754926B2Light emitting diode (LED) arrays including direct die attach and related assembliesDONOFRIO MATTHEW·Filed 2011·Granted Sep 5, 2017·19 cites·7 claims
- 2693US6373077B1Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structureCREE INC·Filed 2000·Granted Apr 16, 2002·53 cites·18 claims
- 2793US5011549AHomoepitaxial growth of Alpha-SiC thin films and semiconductor devices fabricated thereonUNIV NORTH CAROLINA STATE·Filed 1989·Granted Apr 30, 1991·125 cites·9 claims
- 2893US4912063AGrowth of beta-sic thin films and semiconductor devices fabricated thereonUNIV NORTH CAROLINA STATE·Filed 1987·Granted Mar 27, 1990·133 cites·14 claims
- 2992US5838706ALow-strain laser structures with group III nitride active layersCREE RESEARCH INC·Filed 1996·Granted Nov 17, 1998·171 cites·4 claims
- 3091US8575633B2Light emitting diode with improved light extractionDONOFRIO MATTHEW·Filed 2008·Granted Nov 5, 2013·20 cites·44 claims
- 3191US6800876B2Group III nitride LED with undoped cladding layer (5000.137)CREE INC·Filed 2001·Granted Oct 5, 2004·65 cites·19 claims
- 3291US6610551B1Vertical geometry InGaN LEDCREE INC·Filed 2000·Granted Aug 26, 2003·68 cites·6 claims
- 3390US9178121B2Reflective mounting substrates for light emitting diodesEDMOND JOHN A·Filed 2006·Granted Nov 3, 2015·21 cites·15 claims
- 3490US7692209B2Group III nitride LED with undoped cladding layerCREE INC·Filed 2006·Granted Apr 6, 2010·12 cites·29 claims
- 3588US7170097B2Inverted light emitting diode on conductive substrateCREE INC·Filed 2003·Granted Jan 30, 2007·50 cites·35 claims
- 3688US6534797B1Group III nitride light emitting devices with gallium-free layersCREE INC·Filed 2000·Granted Mar 18, 2003·50 cites·29 claims
- 3787US8357923B2External extraction light emitting diode based upon crystallographic faceted surfacesCREE INC·Filed 2010·Granted Jan 22, 2013·4 cites·18 claims
- 3884US6764932B2Single step pendeo- and lateral epitaxial overgrowth of group III-nitride epitaxial layers with group III-nitride buffer layer and resulting structuresCREE INC·Filed 2002·Granted Jul 20, 2004·20 cites·16 claims
- 3983USRE42007EVertical geometry InGaN LEDCREE INC·Filed 2008·Granted Dec 28, 2010·6 cites·31 claims
- 4082US9490235B2Light emitting devices, systems, and methodsEDMOND JOHN A·Filed 2011·Granted Nov 8, 2016·6 cites·54 claims
- 4182US6717185B2Light emitting devices with Group III nitride contact layer and superlatticeCREE INC·Filed 2003·Granted Apr 6, 2004·30 cites·25 claims
- 4281US7531840B2Light emitting diode with metal coupling structureCREE INC·Filed 2007·Granted May 12, 2009·6 cites·28 claims
- 4381US6630690B2Group III nitride photonic devices on silicon carbide substrates with conductive buffer interlayer structureCREE INC·Filed 2001·Granted Oct 7, 2003·17 cites·14 claims
- 4480US7034328B2Vertical geometry InGaN LEDCREE INC·Filed 2002·Granted Apr 25, 2006·24 cites·6 claims
- 4578USD689209SLamp packagesDONOFRIO MATTHEW·Filed 2011·Granted Sep 3, 2013·23 cites·1 claims
- 4677US2024128085A1Carrier-Assisted Method for Parting Crystalline Material Along Laser Damage RegionWOLFSPEED INC·Filed 2023·Application pending·0 cites
- 4776US8247836B2Nickel tin bonding system with barrier layer for semiconductor wafers and devicesDONOFRIO MATTHEW·Filed 2011·Granted Aug 21, 2012·3 cites·15 claims
- 4876US6987281B2Group III nitride contact structures for light emitting devicesCREE INC·Filed 2003·Granted Jan 17, 2006·21 cites·13 claims
- 4975US6803602B2Single step pendeo- and lateral epitaxial overgrowth of Group III-nitride epitaxial layers with Group III-nitride buffer layer and resulting structuresCREE INC·Filed 2003·Granted Oct 12, 2004·11 cites·22 claims
- 5073US7855459B2Modified gold-tin system with increased melting temperature for wafer bondingCREE INC·Filed 2006·Granted Dec 21, 2010·5 cites·25 claims
Showing the top 50 of 65 patent records by PatentIndex Score.
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