Inventor · disambiguated record
George K. Celler
Also filed as: CELLER GEORGE K
23 granted patents·764 citations·filing 1978–2014
97Inventor score
Files withAT & T BELL LAB5SOITEC SILICON ON INSULATOR5BELL TELEPHONE LABOR INC3AMERICAN TELEPHONE & TELEGRAPH2WESTERN ELECTRIC CO2
Top patents by PatentIndex Score
23 records- 0196US4234358APatterned epitaxial regrowth using overlapping pulsed irradiationWESTERN ELECTRIC CO·Filed 1979·Granted Nov 18, 1980·137 cites·23 claims
- 0295US4497683AProcess for producing dielectrically isolated silicon devicesAT & T BELL LAB·Filed 1982·Granted Feb 5, 1985·119 cites·6 claims
- 0393US9761493B2Thin epitaxial silicon carbide wafer fabricationUNIV RUTGERS·Filed 2014·Granted Sep 12, 2017·15 cites·21 claims
- 0490US4406709AMethod of increasing the grain size of polycrystalline materials by directed energy-beamsBELL TELEPHONE LABOR INC·Filed 1981·Granted Sep 27, 1983·83 cites·16 claims
- 0589US7585792B2Relaxation of a strained layer using a molten layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted Sep 8, 2009·12 cites·24 claims
- 0689US5482802AMaterial removal with focused particle beamsAT & T CORP·Filed 1993·Granted Jan 9, 1996·71 cites·15 claims
- 0787US5051326AX-Ray lithography mask and devices made therewithAT & T BELL LAB·Filed 1989·Granted Sep 24, 1991·51 cites·5 claims
- 0886US8299485B2Substrates for monolithic optical circuits and electronic circuitsCELLER GEORGE K·Filed 2008·Granted Oct 30, 2012·22 cites·10 claims
- 0984US7605054B2Method of forming a device wafer with recyclable supportSOITEC SILICON ON INSULATOR·Filed 2007·Granted Oct 20, 2009·8 cites·32 claims
- 1081US4240843AForming self-guarded p-n junctions by epitaxial regrowth of amorphous regions using selective radiation annealingBELL TELEPHONE LABOR INC·Filed 1978·Granted Dec 23, 1980·36 cites·5 claims
- 1177US4258078AMetallization for integrated circuitsBELL TELEPHONE LABOR INC·Filed 1979·Granted Mar 24, 1981·30 cites·13 claims
- 1271US7605055B2Wafer with diamond layerSOITEC SILICON ON INSULATOR·Filed 2005·Granted Oct 20, 2009·5 cites·19 claims
- 1371US4249962AMethod of removing contaminating impurities from device areas in a semiconductor waferWESTERN ELECTRIC CO·Filed 1979·Granted Feb 10, 1981·25 cites·20 claims
- 1470US6388290B1Single crystal silicon on polycrystalline silicon integrated circuitsAGERE SYST GUARDIAN CORP·Filed 1998·Granted May 14, 2002·40 cites·7 claims
- 1569US7968911B2Relaxation of a strained layer using a molten layerSOITEC SILICON ON INSULATOR·Filed 2009·Granted Jun 28, 2011·2 cites·20 claims
- 1666US4461670AProcess for producing silicon devicesAT & T BELL LAB·Filed 1982·Granted Jul 24, 1984·28 cites·9 claims
- 1763US4494303AMethod of making dielectrically isolated silicon devicesAT & T BELL LAB·Filed 1983·Granted Jan 22, 1985·24 cites·9 claims
- 1858US7956436B2Method of forming a device wafer with recyclable supportSOITEC SILICON ON INSULATOR·Filed 2009·Granted Jun 7, 2011·0 cites·8 claims
- 1956US4676841AFabrication of dielectrically isolated devices utilizing buried oxygen implant and subsequent heat treatment at temperatures above 1300° C.AMERICAN TELEPHONE & TELEGRAPH·Filed 1985·Granted Jun 30, 1987·20 cites·5 claims
- 2049US4581814AProcess for fabricating dielectrically isolated devices utilizing heating of the polycrystalline support layer to prevent substrate deformationAT & T BELL LAB·Filed 1984·Granted Apr 15, 1986·15 cites·6 claims
- 2147US8148242B2Oxidation after oxide dissolutionKONONCHUK OLEG·Filed 2008·Granted Apr 3, 2012·0 cites·20 claims
- 2246US4835113AFabrication of dielectrically isolated devices with buried conductive layersAMERICAN TELEPHONE & TELEGRAPH·Filed 1987·Granted May 30, 1989·13 cites·20 claims
- 2337US5656399AProcess for making an x-ray maskLUCENT TECHNOLOGIES INC·Filed 1996·Granted Aug 12, 1997·8 cites·33 claims
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