Inventor · disambiguated record
Rachael L. Myers-Ward
Also filed as: MYERS-WARD RACHAEL L · Myers-Ward Rachael
17 granted patents·2 pending applications·21 citations·filing 2008–2023
89Inventor score
Files withUS GOV SEC NAVY10MYERS WARD RACHAEL L3MASSACHUSETTS INST TECHNOLOGY2CHARLES STARK DRAPER LABORATORY INC1NEPAL NEERAJ1
Top patents by PatentIndex Score
19 records- 0191US10317210B2Whole angle MEMS gyroscope on hexagonal crystal substrateCHARLES STARK DRAPER LABORATORY INC·Filed 2016·Granted Jun 11, 2019·9 cites·32 claims
- 0285US10343900B2Material structure and method for deep silicon carbide etchingUS GOV SEC NAVY·Filed 2017·Granted Jul 9, 2019·3 cites·17 claims
- 0383US10976297B2Graphene-based PPB level sulfur detector in fuelsUS GOV SEC NAVY·Filed 2018·Granted Apr 13, 2021·2 cites·12 claims
- 0473US12469699B2Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articlesMASSACHUSETTS INST TECHNOLOGY·Filed 2023·Granted Nov 11, 2025·0 cites·16 claims
- 0570US10494738B2Growth of crystalline materials on two-dimensional inert materialsUS GOV SEC NAVY·Filed 2019·Granted Dec 3, 2019·0 cites·3 claims
- 0668US11789004B2Graphene-based PPB level sulfur detectorUS GOV SEC NAVY·Filed 2021·Granted Oct 17, 2023·0 cites·13 claims
- 0765US11649159B2Silicon carbide structure, device, and methodUS GOV SEC NAVY·Filed 2020·Granted May 16, 2023·0 cites·8 claims
- 0864US10266963B2Growth of crystalline materials on two-dimensional inert materialsNEPAL NEERAJ·Filed 2014·Granted Apr 23, 2019·0 cites·4 claims
- 0964US8652255B2Method of producing epitaxial layers with low basal plane dislocation concentrationsSTAHLBUSH ROBERT E·Filed 2008·Granted Feb 18, 2014·4 cites·17 claims
- 1062US10717642B2Silicon carbide microelectromechanical structure, device, and methodUS GOV SEC NAVY·Filed 2019·Granted Jul 21, 2020·0 cites·7 claims
- 1161US10256090B2Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch processMYERS WARD RACHAEL L·Filed 2014·Granted Apr 9, 2019·1 cites·11 claims
- 1261US10256094B2Reduction of basal plane dislocations in epitaxial SiC using an in-situ etch processMYERS WARD RACHAEL L·Filed 2014·Granted Apr 9, 2019·1 cites·12 claims
- 1360US10928351B2Plasma modified epitaxial fabricated graphene on SiC for electrochemical trace detection of explosivesUS GOV SEC NAVY·Filed 2018·Granted Feb 23, 2021·0 cites·8 claims
- 1459US9464366B2Reduction of basal plane dislocations in epitaxial SiCMYERS-WARD RACHAEL L·Filed 2010·Granted Oct 11, 2016·1 cites·18 claims
- 1558US10589983B2Silicon carbide microelectromechanical structure, device, and methodUS GOV SEC NAVY·Filed 2017·Granted Mar 17, 2020·0 cites·18 claims
- 1655US2018244513A1Silicon carbide structure, device, and methodUS GOV SEC NAVY·Filed 2018·Application pending·0 cites
- 1750US2021125826A1Systems and methods for growth of silicon carbide over a layer comprising graphene and/or hexagonal boron nitride and related articlesMASSACHUSETTS INST TECHNOLOGY·Filed 2019·Application pending·0 cites
- 1842US11572281B2Method for graphene functionalization that preserves characteristic electronic properties such as the quantum hall effect and enables nanoparticles depositionUS GOV SEC NAVY·Filed 2018·Granted Feb 7, 2023·0 cites·12 claims
- 1939US8603243B2Tracking carbon to silicon ratio in situ during silicon carbide growthVANMIL BRENDA L·Filed 2008·Granted Dec 10, 2013·0 cites·8 claims
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