Inventor · disambiguated record
Ya-Yin Hsiao
Also filed as: HSIAO YA-YIN
5 granted patents·3 pending applications·0 citations·filing 2018–2025
64Inventor score
Files withUNITED MICROELECTRONICS CORP8
Top patents by PatentIndex Score
8 records- 0173US11664425B2P-type field effect transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2022·Granted May 30, 2023·0 cites·6 claims
- 0271US12237398B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2021·Granted Feb 25, 2025·0 cites·1 claims
- 0371US2025169140A1Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2025·Application pending·0 cites
- 0466US11271078B2P-type field effect transistor having channel region with top portion and bottom portionUNITED MICROELECTRONICS CORP·Filed 2020·Granted Mar 8, 2022·0 cites·1 claims
- 0560US11063135B2Semiconductor device and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted Jul 13, 2021·0 cites·1 claims
- 0658US2025212426A1Metal-insulator-metal capacitor structureUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
- 0757US10651275B2P-type field effect transistor and method for fabricating the sameUNITED MICROELECTRONICS CORP·Filed 2018·Granted May 12, 2020·0 cites·6 claims
- 0857US2025240985A1Semiconductor structure with a deep trench capacitor structures and forming method thereofUNITED MICROELECTRONICS CORP·Filed 2024·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →