Inventor · disambiguated record
Kenya Yamashita
Also filed as: YAMASHITA KENYA
32 granted patents·4 pending applications·548 citations·filing 2000–2022
97Inventor score
Files withPANASONIC CORP12MATSUSHITA ELECTRIC INDUSTRIAL CO LTD11YAMASHITA KENYA4PANASONIC IP MAN CO LTD3MARUNO MASANORI2
Top patents by PatentIndex Score
36 records- 0196US7507999B2Semiconductor device and method for manufacturing samePANASONIC CORP·Filed 2003·Granted Mar 24, 2009·133 cites·12 claims
- 0295US8421151B2Semiconductor device and process for production thereofYAMASHITA KENYA·Filed 2010·Granted Apr 16, 2013·46 cites·14 claims
- 0395US6995397B2Semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 7, 2006·114 cites·26 claims
- 0490US7671409B2Wide gap semiconductor power device with temperature independent resistivity due to channel region resistivity having negative temperature dependencePANASONIC CORP·Filed 2005·Granted Mar 2, 2010·18 cites·8 claims
- 0585US8916967B1Semiconductor devicePANASONIC CORP·Filed 2014·Granted Dec 23, 2014·7 cites·9 claims
- 0685US7791308B2Semiconductor element and electrical apparatusPANASONIC CORP·Filed 2006·Granted Sep 7, 2010·14 cites·11 claims
- 0782US7473929B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2004·Granted Jan 6, 2009·23 cites·13 claims
- 0881US7462540B2Silicon carbide semiconductor device and process for producing the samePANASONIC CORP·Filed 2005·Granted Dec 9, 2008·7 cites·9 claims
- 0981US6995396B2Semiconductor substrate, semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Feb 7, 2006·25 cites·11 claims
- 1077US7230273B2Semiconductor device with a plurality of semiconductor elements each including a wide band-gap semiconductorMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Jun 12, 2007·24 cites·9 claims
- 1176US6774900B1Image displaying device, image processing device, image displaying systemSEGA ENTERPRISES KK·Filed 2000·Granted Aug 10, 2004·26 cites·11 claims
- 1275US6580125B2Semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2001·Granted Jun 17, 2003·18 cites·8 claims
- 1373US6940110B2SiC-MISFET and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2003·Granted Sep 6, 2005·18 cites·10 claims
- 1472US8754422B2Semiconductor device and process for production thereofKUDOU CHIAKI·Filed 2010·Granted Jun 17, 2014·3 cites·16 claims
- 1572US7381993B2High-breakdown-voltage insulated gate semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2007·Granted Jun 3, 2008·4 cites·14 claims
- 1670US6600203B2Semiconductor device with silicon carbide suppression layer for preventing extension of micropipeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted Jul 29, 2003·12 cites·3 claims
- 1769US7217954B2Silicon carbide semiconductor device and method for fabricating the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 15, 2007·11 cites·14 claims
- 1868US8703382B2Photosensitive resin composition for flexographic printing having excellent solvent resistanceMARUNO MASANORI·Filed 2010·Granted Apr 22, 2014·2 cites·16 claims
- 1968US7964911B2Semiconductor element and electrical apparatusPANASONIC CORP·Filed 2006·Granted Jun 21, 2011·4 cites·13 claims
- 2068US7436031B2Device for implementing an inverter having a reduced sizeMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2005·Granted Oct 14, 2008·4 cites·14 claims
- 2167US9520344B2Semiconductor module for electric powerPANASONIC IP MAN CO LTD·Filed 2013·Granted Dec 13, 2016·2 cites·12 claims
- 2264US7709403B2Silicon carbide-oxide layered structure, production method thereof, and semiconductor devicePANASONIC CORP·Filed 2004·Granted May 4, 2010·11 cites·3 claims
- 2363US7846828B2Semiconductor device and method for fabricating the samePANASONIC CORP·Filed 2008·Granted Dec 7, 2010·1 cites·5 claims
- 2460US8530943B2Semiconductor deviceYAMASHITA KENYA·Filed 2009·Granted Sep 10, 2013·2 cites·14 claims
- 2558US7786565B2Semiconductor apparatus including power semiconductor device constructed by using wide band gap semiconductorPANASONIC CORP·Filed 2004·Granted Aug 31, 2010·8 cites·10 claims
- 2655US6900483B2Semiconductor device and method for manufacturing the sameMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2002·Granted May 31, 2005·6 cites·25 claims
- 2754US10763395B2Light emitting diode element and method for manufacturing samePANASONIC IP MAN CO LTD·Filed 2019·Granted Sep 1, 2020·0 cites·11 claims
- 2854US2023010490A1Wavelength beam combining systemPANASONIC HOLDINGS CORP·Filed 2022·Application pending·0 cites
- 2953US10923346B2Group III nitride semiconductor and method for producing samePANASONIC IP MAN CO LTD·Filed 2019·Granted Feb 16, 2021·0 cites·4 claims
- 3052US2016046839A1Removable self-adhesive filmMARUNO MASANORI·Filed 2014·Application pending·0 cites
- 3149US7214984B2High-breakdown-voltage insulated gate semiconductor deviceMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 2004·Granted May 8, 2007·3 cites·17 claims
- 3248US2011198616A1Semiconductor device and method for manufacturing sameYAMASHITA KENYA·Filed 2009·Application pending·0 cites
- 3345US11335839B2Group III nitride semiconductor light emitting diode, and method for producing samePANASONIC CORP·Filed 2019·Granted May 17, 2022·0 cites·2 claims
- 3445US7816688B2Semiconductor device and production method thereforPANASONIC CORP·Filed 2002·Granted Oct 19, 2010·2 cites·9 claims
- 3542US8699228B2Power moduleTAKAHASHI KEIKO·Filed 2012·Granted Apr 15, 2014·0 cites·12 claims
- 3640US2007298815A1Position Display SystemYAMASHITA KENYA·Filed 2005·Application pending·0 cites
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