Inventor · disambiguated record
Umesh Mishra
Also filed as: MISHRA UMESH · MISHRA UMESH K · MISHRA UMESH KUMAR
158 granted patents·33 pending applications·4,807 citations·filing 1989–2025
99Inventor score
Top patents by PatentIndex Score
191 records- 0199US8237198B2Semiconductor heterostructure diodesWU YIFENG·Filed 2011·Granted Aug 7, 2012·102 cites·15 claims
- 0299US7898004B2Semiconductor heterostructure diodesTRANSPHORM INC·Filed 2008·Granted Mar 1, 2011·139 cites·22 claims
- 0398US8803246B2Semiconductor electronic components with integrated current limitersWU YIFENG·Filed 2012·Granted Aug 12, 2014·38 cites·32 claims
- 0498US8742460B2Transistors with isolation regionsMISHRA UMESH·Filed 2010·Granted Jun 3, 2014·51 cites·20 claims
- 0598US8519438B2Enhancement mode III-N HEMTsMISHRA UMESH·Filed 2008·Granted Aug 27, 2013·107 cites·58 claims
- 0698US7915644B2Wide bandgap HEMTs with source connected field platesCREE INC·Filed 2009·Granted Mar 29, 2011·91 cites·21 claims
- 0798US7915643B2Enhancement mode gallium nitride power devicesTRANSPHORM INC·Filed 2007·Granted Mar 29, 2011·155 cites·14 claims
- 0898US7893500B2High voltage GaN transistorsCREE INC·Filed 2009·Granted Feb 22, 2011·91 cites·23 claims
- 0998US7851825B2Insulated gate e-mode transistorsTRANSPHORM INC·Filed 2008·Granted Dec 14, 2010·124 cites·33 claims
- 1098US7692263B2High voltage GaN transistorsCREE INC·Filed 2006·Granted Apr 6, 2010·110 cites·19 claims
- 1198US7573078B2Wide bandgap transistors with multiple field platesCREE INC·Filed 2004·Granted Aug 11, 2009·154 cites·20 claims
- 1298US7230284B2Insulating gate AlGaN/GaN HEMTCREE INC·Filed 2002·Granted Jun 12, 2007·147 cites·14 claims
- 1398US7186302B2Fabrication of nonpolar indium gallium nitride thin films, heterostructures and devices by metalorganic chemical vapor depositionJAPAN SCIENCE & TECH AGENCY·Filed 2005·Granted Mar 6, 2007·87 cites·20 claims
- 1497US9443938B2III-nitride transistor including a p-type depleting layerTRANSPHORM INC·Filed 2014·Granted Sep 13, 2016·27 cites·10 claims
- 1597US9437708B2Enhancement mode III-N HEMTsTRANSPHORM INC·Filed 2015·Granted Sep 6, 2016·16 cites·22 claims
- 1697US9226383B2Group III nitride based flip-chip integrated circuit and method for fabricatingCREE INC·Filed 2014·Granted Dec 29, 2015·19 cites·23 claims
- 1797US8901604B2Semiconductor devices with guard ringsMISHRA UMESH·Filed 2011·Granted Dec 2, 2014·42 cites·41 claims
- 1897US8841702B2Enhancement mode III-N HEMTsTRANSPHORM INC·Filed 2013·Granted Sep 23, 2014·25 cites·29 claims
- 1997US8633518B2Gallium nitride power devicesTRANSPHORM INC·Filed 2012·Granted Jan 21, 2014·48 cites·21 claims
- 2097US8541818B2Semiconductor heterostructure diodesWU YIFENG·Filed 2012·Granted Sep 24, 2013·30 cites·17 claims
- 2197US8344424B2Enhancement mode gallium nitride power devicesTRANSPHORM INC·Filed 2012·Granted Jan 1, 2013·44 cites·9 claims
- 2297US7550783B2Wide bandgap HEMTs with source connected field platesCREE INC·Filed 2004·Granted Jun 23, 2009·135 cites·22 claims
- 2397US7388236B2High efficiency and/or high power density wide bandgap transistorsCREE INC·Filed 2006·Granted Jun 17, 2008·91 cites·29 claims
- 2497US6849882B2Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layerCREE INC·Filed 2002·Granted Feb 1, 2005·312 cites·34 claims
- 2596US10043896B2III-Nitride transistor including a III-N depleting layerTRANSPHORM INC·Filed 2017·Granted Aug 7, 2018·12 cites·20 claims
- 2696US9941399B2Enhancement mode III-N HEMTsTRANSPHORM INC·Filed 2016·Granted Apr 10, 2018·13 cites·8 claims
- 2796US9935190B2Forming enhancement mode III-nitride devicesTRANSPHORM INC·Filed 2016·Granted Apr 3, 2018·25 cites·12 claims
- 2896US9842922B2III-nitride transistor including a p-type depleting layerTRANSPHORM INC·Filed 2016·Granted Dec 12, 2017·12 cites·20 claims
- 2996US9634100B2Semiconductor devices with integrated hole collectorsTRANSPHORM INC·Filed 2015·Granted Apr 25, 2017·12 cites·8 claims
- 3096US9443849B2Semiconductor electronic components with integrated current limitersTRANSPHORM INC·Filed 2015·Granted Sep 13, 2016·12 cites·20 claims
- 3196US9437707B2Transistors with isolation regionsTRANSPHORM INC·Filed 2015·Granted Sep 6, 2016·12 cites·30 claims
- 3296US9196716B2Enhancement mode III-N HEMTsTRANSPHORM INC·Filed 2014·Granted Nov 24, 2015·18 cites·22 claims
- 3396US9171730B2Electrodes for semiconductor devices and methods of forming the sameTRANSPHORM INC·Filed 2014·Granted Oct 27, 2015·24 cites·16 claims
- 3496US9129977B2Method of controlling stress in group-III nitride films deposited on substratesMARCHAND HUGUES·Filed 2011·Granted Sep 8, 2015·28 cites·45 claims
- 3596US8643062B2III-N device structures and methodsPARIKH PRIMIT·Filed 2011·Granted Feb 4, 2014·28 cites·33 claims
- 3696US8624662B2Semiconductor electronic components and circuitsPARIKH PRIMIT·Filed 2010·Granted Jan 7, 2014·35 cites·45 claims
- 3796US8598937B2High power semiconductor electronic components with increased reliabilityLAL RAKESH K·Filed 2011·Granted Dec 3, 2013·55 cites·85 claims
- 3896US8389977B2Reverse side engineered III-nitride devicesCHU RONGMING·Filed 2009·Granted Mar 5, 2013·42 cites·38 claims
- 3996US8193562B2Enhancement mode gallium nitride power devicesSUH CHANG SOO·Filed 2011·Granted Jun 5, 2012·53 cites·20 claims
- 4096US7948011B2N-polar aluminum gallium nitride/gallium nitride enhancement-mode field effect transistorUNIV CALIFORNIA·Filed 2006·Granted May 24, 2011·81 cites·37 claims
- 4196US7846757B2Technique for the growth and fabrication of semipolar (Ga,A1,In,B)N thin films, heterostructures, and devicesUNIV CALIFORNIA·Filed 2006·Granted Dec 7, 2010·33 cites·23 claims
- 4296US7812369B2Fabrication of single or multiple gate field platesUNIV CALIFORNIA·Filed 2004·Granted Oct 12, 2010·113 cites·23 claims
- 4396US7728356B2P-GaN/AlGaN/AlN/GaN enhancement-mode field effect transistorUNIV CALIFORNIA·Filed 2008·Granted Jun 1, 2010·73 cites·10 claims
- 4496US6825559B2Group III nitride based flip-chip intergrated circuit and method for fabricatingCREE INC·Filed 2003·Granted Nov 30, 2004·68 cites·18 claims
- 4596US6610144B2Method to reduce the dislocation density in group III-nitride filmsUNIV CALIFORNIA·Filed 2001·Granted Aug 26, 2003·113 cites·32 claims
- 4695US9520491B2Electrodes for semiconductor devices and methods of forming the sameTRANSPHORM INC·Filed 2015·Granted Dec 13, 2016·13 cites·21 claims
- 4795US9490324B2N-polar III-nitride transistorsTRANSPHORM INC·Filed 2015·Granted Nov 8, 2016·13 cites·39 claims
- 4895US9147760B2Transistors with isolation regionsTRANSPHORM INC·Filed 2014·Granted Sep 29, 2015·16 cites·11 claims
- 4995US8895421B2III-N device structures and methodsTRANSPHORM INC·Filed 2013·Granted Nov 25, 2014·17 cites·21 claims
- 5095US8860495B2Method of forming electronic components with increased reliabilityTRANSPHORM INC·Filed 2013·Granted Oct 14, 2014·17 cites·19 claims
Showing the top 50 of 191 patent records by PatentIndex Score.
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