Inventor · disambiguated record
Hideyuki Okita
Also filed as: OKITA HIDEYUKI
13 granted patents·10 pending applications·57 citations·filing 2006–2022
88Inventor score
Top patents by PatentIndex Score
23 records- 0193US7811872B2Method for manufacturing a field effect transistor having a field plateOKI ELECTRIC IND CO LTD·Filed 2008·Granted Oct 12, 2010·29 cites·7 claims
- 0288US12419069B2Nitride semiconductor device with suppressed leakage current and method of fabricating the samePANASONIC IP MAN CO LTD·Filed 2020·Granted Sep 16, 2025·2 cites·12 claims
- 0381US9685549B2Nitride semiconductor device and method for manufacturing samePANASONIC CORP·Filed 2013·Granted Jun 20, 2017·4 cites·11 claims
- 0480US11171228B2Nitride semiconductor device and method for manufacturing the samePANASONIC IP MAN CO LTD·Filed 2019·Granted Nov 9, 2021·2 cites·19 claims
- 0580US9577084B2Semiconductor device having a semiconductor layer stacked bodyPANASONIC IP MAN CO LTD·Filed 2015·Granted Feb 21, 2017·3 cites·7 claims
- 0677US8114726B2AlGaN/GaN HEMT with normally-off threshold minimized and method of manufacturing the sameMARUI TOSHIHARU·Filed 2010·Granted Feb 14, 2012·7 cites·6 claims
- 0774US9859413B2Nitride semiconductor device and method of manufacturing the samePANASONIC IP MAN CO LTD·Filed 2017·Granted Jan 2, 2018·2 cites·12 claims
- 0871US7812372B2Semiconductor device having a support substrate partially having metal part extending across its thicknessOKI ELECTRIC IND CO LTD·Filed 2007·Granted Oct 12, 2010·5 cites·24 claims
- 0967US9293574B2Semiconductor device and method of manufacturing semiconductor devicePANASONIC CORP·Filed 2014·Granted Mar 22, 2016·2 cites·14 claims
- 1065US9412858B2Group III nitride semiconductor device which can be used as a power transistorPANASONIC IP MAN CO LTD·Filed 2015·Granted Aug 9, 2016·1 cites·10 claims
- 1163US2022190152A1Semiconductor devicePANASONIC IP MAN CO LTD·Filed 2022·Application pending·0 cites
- 1255US2025006798A1Nitride semiconductor device and manufacturing method thereforPANASONIC IP MAN CO LTD·Filed 2022·Application pending·0 cites
- 1352US12431411B2Semiconductor device and semiconductor component including the samePANASONIC IP MAN CO LTD·Filed 2021·Granted Sep 30, 2025·0 cites·14 claims
- 1451US11152499B2Nitride semiconductor device and method for manufacturing samePANASONIC IP MAN CO LTD·Filed 2019·Granted Oct 19, 2021·0 cites·18 claims
- 1551US2018248027A1Semiconductor devicePANASONIC IP MAN CO LTD·Filed 2018·Application pending·0 cites
- 1651US2024112909A1Nitride semiconductor epitaxial substrate, method for producing same, and nitride semiconductor devicePANASONIC IP MAN CO LTD·Filed 2022·Application pending·0 cites
- 1750US2023361179A1Nitride semiconductor devicePANASONIC IP MAN CO LTD·Filed 2021·Application pending·0 cites
- 1849US11257918B2Semiconductor device and method of manufacturing the devicePANASONIC IP MAN CO LTD·Filed 2019·Granted Feb 22, 2022·0 cites·14 claims
- 1949US2023411506A1Nitride semiconductor devicePANASONIC IP MAN CO LTD·Filed 2021·Application pending·0 cites
- 2042US2008272443A1Field effect transistor having field plate electrodesOKI ELECTRIC IND CO LTD·Filed 2008·Application pending·0 cites
- 2140US2009001381A1Semiconductor deviceOKI ELECTRIC IND CO LTD·Filed 2008·Application pending·0 cites
- 2239US2006214187A1Wafer for semiconductor device fabrication, method of manufacture of same, and field effect transistorOKI ELECTRIC IND CO LTD·Filed 2006·Application pending·0 cites
- 2334US2010224911A1Gallium nitride high electron mobility transistorOKI ELECTRIC IND CO LTD·Filed 2010·Application pending·0 cites
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