Inventor · disambiguated record
Ming-Jie Huang
Also filed as: HUANG MING-JIE
29 granted patents·4 pending applications·247 citations·filing 2002–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG12TAIWAN SEMICONDUCTOR MFG CO LTD11KAO TA-WEI2KO CHUN-HUNG2CHEN CHEN-PING1
Top patents by PatentIndex Score
33 records- 0198US9214358B1Equal gate height control method for semiconductor device with different pattern densitesTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 15, 2015·43 cites·20 claims
- 0297US9917085B2Metal gate isolation structure and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·18 cites·20 claims
- 0395US10134604B1Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 20, 2018·10 cites·20 claims
- 0493US9412666B2Equal gate height control method for semiconductor device with different pattern densitesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 9, 2016·7 cites·20 claims
- 0593US8609497B2Method of dual EPI process for semiconductor deviceCHUNG HAN-PIN·Filed 2010·Granted Dec 17, 2013·28 cites·20 claims
- 0693US8329546B2Modified profile gate structure for semiconductor device and methods of forming thereofLEE DA-YUAN·Filed 2010·Granted Dec 11, 2012·22 cites·20 claims
- 0790US12336235B2Semiconductor device having isolation structure formed of low-k dielectric material and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jun 17, 2025·1 cites·14 claims
- 0890US11316030B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 26, 2022·2 cites·20 claims
- 0989US11616133B2Fin field-effect transistor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Mar 28, 2023·1 cites·20 claims
- 1087US8900957B2Method of dual epi process for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·7 cites·12 claims
- 1187US8048764B2Dual etch method of defining active area in semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Nov 1, 2011·11 cites·20 claims
- 1285US8071481B2Method for forming highly strained source/drain trenchesKAO TA-WEI·Filed 2009·Granted Dec 6, 2011·11 cites·9 claims
- 1383US10186511B2Metal gate isolation structure and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 22, 2019·3 cites·20 claims
- 1483US8900956B2Method of dual EPI process for semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Dec 2, 2014·5 cites·20 claims
- 1583US6794230B2Approach to improve line end shorteningTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Sep 21, 2004·22 cites·19 claims
- 1680US6828205B2Method using wet etching to trim a critical dimensionTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 7, 2004·24 cites·19 claims
- 1778US8501570B2Method of manufacturing source/drain structuresFANG ZIWEI·Filed 2010·Granted Aug 6, 2013·4 cites·25 claims
- 1875US9543210B2Forming crown active regions for FinFETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 10, 2017·2 cites·20 claims
- 1975US9130058B2Forming crown active regions for FinFETsCHEN CHEN-PING·Filed 2010·Granted Sep 8, 2015·5 cites·17 claims
- 2074US2025275195A1Manufacturing method of semiconductor device having isolation structure formed of low-k dielectric materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2166US7008866B2Large-scale trimming for ultra-narrow gatesTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Mar 7, 2006·11 cites·12 claims
- 2264US8877614B2Spacer for semiconductor structure contactKO CHUN-HUNG·Filed 2011·Granted Nov 4, 2014·2 cites·20 claims
- 2363US8835242B2Semiconductor structure and methodTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Sep 16, 2014·1 cites·20 claims
- 2461US7115450B2Approach to improve line end shortening including simultaneous trimming of photosensitive layer and hardmaskTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 3, 2006·5 cites·14 claims
- 2559US10867807B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 15, 2020·0 cites·20 claims
- 2650US2024071850A1Semiconductor structure with hybrid film and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 2745US10868166B2Highly strained source/drain trenches in semiconductor devicesKAO TA WEI·Filed 2011·Granted Dec 15, 2020·0 cites·17 claims
- 2845US8692353B2Semiconductor structure and methodKO CHUN-HUNG·Filed 2011·Granted Apr 8, 2014·0 cites·18 claims
- 2945US7141460B2Method of forming trenches in a substrate by etching and trimming both hard mask and a photosensitive layersTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Nov 28, 2006·0 cites·15 claims
- 3045US7060628B2Method for fabricating a hard mask polysilicon gateTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jun 13, 2006·2 cites·13 claims
- 3144US2006205224A1Large-scale trimming for ultra-narrow gatesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 3236US2006049470A1Double layer polysilicon gate electrodeCHEN CHIA-LIN·Filed 2004·Application pending·0 cites
- 3332US8563439B2Method of pitch dimension shrinkageHUANG MING-JIE·Filed 2010·Granted Oct 22, 2013·0 cites·20 claims
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