Inventor · disambiguated record
Geum-Jong Bae
Also filed as: BAE GEUM JONG
90 granted patents·8 pending applications·1,304 citations·filing 2000–2023
99Inventor score
Top patents by PatentIndex Score
98 records- 0199US7642140B2CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 5, 2010·135 cites·10 claims
- 0298US11393929B2Semiconductor devices and manufacturing methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 19, 2022·4 cites·20 claims
- 0398US10243040B1Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 26, 2019·38 cites·20 claims
- 0497US11735629B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Aug 22, 2023·3 cites·16 claims
- 0597US11444081B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Sep 13, 2022·3 cites·20 claims
- 0697US6633066B1CMOS integrated circuit devices and substrates having unstrained silicon active layersSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 14, 2003·124 cites·12 claims
- 0796US11894379B2Semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Feb 6, 2024·2 cites·20 claims
- 0896US11367723B2Semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 21, 2022·3 cites·20 claims
- 0996US11222949B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 11, 2022·3 cites·20 claims
- 1096US10128379B2Semiconductor device having channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Nov 13, 2018·14 cites·20 claims
- 1196US7183172B2Method of forming silicon-on-insulator (SOI) semiconductor substrate and SOI semiconductor substrate formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 27, 2007·95 cites·6 claims
- 1295US11923362B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Mar 5, 2024·1 cites·20 claims
- 1395US10872983B2Semiconductor devices and manufacturing methods thereofSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Dec 22, 2020·9 cites·16 claims
- 1495US10431585B2Semiconductor devices with multi-gate structure and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 1, 2019·9 cites·18 claims
- 1595US10056454B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 21, 2018·13 cites·20 claims
- 1695US9825183B2Semiconductor device including gate electrode extending between nanosheetsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 21, 2017·10 cites·19 claims
- 1794US10629740B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 21, 2020·8 cites·19 claims
- 1894US7195987B2Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers thereinSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 27, 2007·26 cites·17 claims
- 1994US6815764B2Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·71 cites·13 claims
- 2093US11676964B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jun 13, 2023·1 cites·20 claims
- 2193US11107822B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Aug 31, 2021·8 cites·20 claims
- 2293US10930649B2Integrated circuit (IC) deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 23, 2021·5 cites·19 claims
- 2391US10566331B1Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 18, 2020·7 cites·20 claims
- 2491US10181510B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jan 15, 2019·7 cites·19 claims
- 2591US6670677B2SOI substrate having an etch stop layer and an SOI integrated circuit fabricated thereonSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 30, 2003·45 cites·15 claims
- 2691US6448115B1Semiconductor device having quasi-SOI structure and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Sep 10, 2002·59 cites·13 claims
- 2790US11309421B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Apr 19, 2022·2 cites·20 claims
- 2890US11069818B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 20, 2021·5 cites·20 claims
- 2990US11024628B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jun 1, 2021·5 cites·18 claims
- 3090US10978299B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 13, 2021·5 cites·20 claims
- 3190US10784344B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Sep 22, 2020·4 cites·19 claims
- 3289US6806517B2Flash memory having local SONOS structure using notched gate and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 19, 2004·47 cites·20 claims
- 3388US11133383B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Sep 28, 2021·2 cites·16 claims
- 3487US7112849B2Method of preventing semiconductor layers from bending and semiconductor device formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 26, 2006·10 cites·8 claims
- 3587US6518645B2SOI-type semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 11, 2003·44 cites·16 claims
- 3686US10229908B2Semiconductor device including a multigate transistor formed with fin structureSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 12, 2019·3 cites·19 claims
- 3786US7250655B2MOS transistor having a T-shaped gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 31, 2007·38 cites·17 claims
- 3886US7045424B2Method of fabricating local SONOS type gate structure and method of fabricating nonvolatile memory cell having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted May 16, 2006·37 cites·32 claims
- 3985US6605847B2Semiconductor device having gate all around type transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 12, 2003·32 cites·10 claims
- 4084US10453839B2Semiconductor device including a multigate transistor formed with fin structureSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Oct 22, 2019·2 cites·20 claims
- 4183US10903324B2Semiconductor device including fin-FET and etch stop layersSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 26, 2021·3 cites·19 claims
- 4283US6693013B2Semiconductor transistor using L-shaped spacer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 17, 2004·29 cites·21 claims
- 4382US10818802B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 27, 2020·2 cites·13 claims
- 4482US7184316B2Non-volatile memory cell array having common drain lines and method of operating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 27, 2007·11 cites·32 claims
- 4582US6524902B2Method of manufacturing CMOS semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 25, 2003·26 cites·11 claims
- 4681US12199099B2Semiconductor devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·10 claims
- 4781US11373909B2Semiconductor devices having fin-shaped active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jun 28, 2022·1 cites·20 claims
- 4881US10014393B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 3, 2018·3 cites·15 claims
- 4981US9985141B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 29, 2018·2 cites·15 claims
- 5081US6657258B2Semiconductor device having quasi-SOI structureSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 2, 2003·26 cites·3 claims
Showing the top 50 of 98 patent records by PatentIndex Score.
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