Inventor · disambiguated record
Horng-Sen Fu
Also filed as: FU HORNG S · FU HORNG-SEN · TASCH AL F JR · TAYLOR GEOFF W
17 granted patents·551 citations·filing 1975–1993
95Inventor score
Top patents by PatentIndex Score
17 records- 0194US4112575AFabrication methods for the high capacity ram cellTEXAS INSTRUMENTS INC·Filed 1976·Granted Sep 12, 1978·57 cites·51 claims
- 0291US4384301AHigh performance submicron metal-oxide-semiconductor field effect transistor device structureTEXAS INSTRUMENTS INC·Filed 1981·Granted May 17, 1983·62 cites·4 claims
- 0391US4305200AMethod of forming self-registering source, drain, and gate contacts for FET transistor structuresHEWLETT PACKARD CO·Filed 1979·Granted Dec 15, 1981·57 cites·4 claims
- 0489US5393690AMethod of making semiconductor having improved interlevel conductor insulationTEXAS INSTRUMENTS INC·Filed 1993·Granted Feb 28, 1995·69 cites·2 claims
- 0589US4358340ASubmicron patterning without using submicron lithographic techniqueTEXAS INSTRUMENTS INC·Filed 1980·Granted Nov 9, 1982·78 cites·10 claims
- 0683US4047215AUniphase charge coupled devicesTEXAS INSTRUMENTS INC·Filed 1975·Granted Sep 6, 1977·27 cites·9 claims
- 0779US4060738ACharge coupled device random access memoryTEXAS INSTRUMENTS INC·Filed 1976·Granted Nov 29, 1977·21 cites·20 claims
- 0878US4153904ASemiconductor device having a high breakdown voltage junction characteristicTEXAS INSTRUMENTS INC·Filed 1977·Granted May 8, 1979·31 cites·14 claims
- 0971US4356040ASemiconductor device having improved interlevel conductor insulationTEXAS INSTRUMENTS INC·Filed 1980·Granted Oct 26, 1982·32 cites·7 claims
- 1071US4355454ACoating device with As2 -O3 -SiO2TEXAS INSTRUMENTS INC·Filed 1981·Granted Oct 26, 1982·22 cites·4 claims
- 1168US4535528AMethod for improving reflow of phosphosilicate glass by arsenic implantationHEWLETT PACKARD CO·Filed 1983·Granted Aug 20, 1985·27 cites·32 claims
- 1262US4455738ASelf-aligned gate method for making MESFET semiconductorTEXAS INSTRUMENTS INC·Filed 1981·Granted Jun 26, 1984·24 cites·3 claims
- 1358US4553316ASelf-aligned gate method for making MESFET semiconductorTEXAS INSTRUMENTS INC·Filed 1984·Granted Nov 19, 1985·14 cites·2 claims
- 1457US5202574ASemiconductor having improved interlevel conductor insulationTEXAS INSTRUMENTS INC·Filed 1992·Granted Apr 13, 1993·15 cites·2 claims
- 1553US4319260AMultilevel interconnect system for high density silicon gate field effect transistorsTEXAS INSTRUMENTS INC·Filed 1979·Granted Mar 9, 1982·8 cites·4 claims
- 1646US4152779AMOS ram cell having improved refresh timeTEXAS INSTRUMENTS INC·Filed 1978·Granted May 1, 1979·4 cites·14 claims
- 1737US4203125ABuried storage punch through dynamic ram cellTEXAS INSTRUMENTS INC·Filed 1978·Granted May 13, 1980·3 cites·8 claims
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