Inventor · disambiguated record
Dong-Gun Park
Also filed as: PARK DONG-GUN
133 granted patents·31 pending applications·2,416 citations·filing 1992–2016
99Inventor score
Top patents by PatentIndex Score
164 records- 0198US7329580B2Method of fabricating a semiconductor device having self-aligned floating gate and related deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 12, 2008·277 cites·23 claims
- 0298US7323375B2Fin field effect transistor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 29, 2008·108 cites·21 claims
- 0397US7670912B2Methods of fabricating multichannel metal oxide semiconductor (MOS) transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 2, 2010·172 cites·18 claims
- 0497US7402493B2Method for forming non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 22, 2008·35 cites·23 claims
- 0597US7368352B2Semiconductor devices having transistors with vertical channels and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 6, 2008·61 cites·33 claims
- 0697US7332386B2Methods of fabricating fin field transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 19, 2008·56 cites·16 claims
- 0797US7297600B2Methods of forming fin field effect transistors using oxidation barrier layersSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Nov 20, 2007·135 cites·17 claims
- 0896US8466511B2Vertical channel fin field-effect transistors having increased source/drain contact area and methods for fabricating the sameOH CHANG-WOO·Filed 2009·Granted Jun 18, 2013·31 cites·20 claims
- 0996US8101475B2Field effect transistor and method for manufacturing the sameOH CHANG-WOO·Filed 2009·Granted Jan 24, 2012·48 cites·15 claims
- 1096US7745871B2Fin field effect transistors including oxidation barrier layersOH CHANG-WOO·Filed 2007·Granted Jun 29, 2010·46 cites·8 claims
- 1196US7615429B2Methods of fabricating field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 10, 2009·39 cites·20 claims
- 1296US7317230B2Fin FET structureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 8, 2008·75 cites·25 claims
- 1395US7586149B2Circuit device including vertical transistors connected to buried bitlines and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 8, 2009·34 cites·20 claims
- 1495US7177192B2Method of operating a flash memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 13, 2007·37 cites·18 claims
- 1595US7002207B2Field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 21, 2006·74 cites·34 claims
- 1694US8815702B2Methods of manufacturing semiconductor devices having a support structure for an active layer patternSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 26, 2014·13 cites·23 claims
- 1794US7348628B2Vertical channel semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Mar 25, 2008·30 cites·24 claims
- 1894US7026688B2Field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 11, 2006·22 cites·17 claims
- 1993US7566619B2Methods of forming integrated circuit devices having field effect transistors of different types in different device regionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 28, 2009·12 cites·13 claims
- 2093US7514325B2Fin-FET having GAA structure and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Apr 7, 2009·23 cites·16 claims
- 2193US7396726B2Methods of fabricating surrounded-channel transistors with directionally etched gate or insulator formation regionsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 8, 2008·21 cites·18 claims
- 2293US7271456B2Semiconductor devices including stress inducing layersSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 18, 2007·19 cites·38 claims
- 2392US7781285B2Semiconductor device having vertical transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Aug 24, 2010·22 cites·15 claims
- 2492US7358142B2Method for forming a FinFET by a damascene processSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 15, 2008·29 cites·5 claims
- 2592US7148527B2Semiconductor devices with enlarged recessed gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 12, 2006·54 cites·19 claims
- 2691US7977725B2Integrated circuit semiconductor device including stacked level transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 12, 2011·20 cites·17 claims
- 2791US7531412B2Methods of manufacturing semiconductor memory devices including a vertical channel transistorSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 12, 2009·26 cites·26 claims
- 2891US7166514B2Semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 23, 2007·15 cites·25 claims
- 2990US7056781B2Method of forming fin field effect transistorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 6, 2006·51 cites·26 claims
- 3089US8293604B2Methods of manufacturing vertical channel semiconductor devicesYOON JAE-MAN·Filed 2010·Granted Oct 23, 2012·9 cites·13 claims
- 3189US7800172B2Methods of forming semiconductor devices having multiple channel MOS transistors and related intermediate structuresSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 21, 2010·14 cites·7 claims
- 3289US7781287B2Methods of manufacturing vertical channel semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 24, 2010·14 cites·12 claims
- 3388US8022457B2Semiconductor memory device having vertical channel transistor and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 20, 2011·13 cites·15 claims
- 3488US7397131B2Self-aligned semiconductor contact structuresSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jul 8, 2008·12 cites·17 claims
- 3588US7317646B2Memory device having shared open bit line sense amplifier architectureSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 8, 2008·15 cites·21 claims
- 3688US7247896B2Semiconductor devices having a field effect transistor and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jul 24, 2007·25 cites·15 claims
- 3788US7161206B2Non-volatile memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 9, 2007·33 cites·17 claims
- 3887US7419859B2Method of fabricating a semiconductor device having a single gate electrode corresponding to a pair of fin-type channel regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 2, 2008·13 cites·20 claims
- 3987US7387931B2Semiconductor memory device with vertical channel transistor and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 17, 2008·12 cites·28 claims
- 4086US7804137B2Field effect transistor (FET) devices and methods of manufacturing FET devicesSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 28, 2010·12 cites·16 claims
- 4186US7528022B2Method of forming fin field effect transistor using damascene processSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 5, 2009·11 cites·11 claims
- 4286US7132349B2Methods of forming integrated circuits structures including epitaxial silicon layers in active regionsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 7, 2006·9 cites·13 claims
- 4386US6649508B1Methods of forming self-aligned contact structures in semiconductor integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 18, 2003·39 cites·32 claims
- 4485US7473963B2Metal oxide semiconductor (MOS) transistors having three dimensional channelsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 6, 2009·8 cites·16 claims
- 4585US7329581B2Field effect transistor (FET) devices and methods of manufacturing FET devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Feb 12, 2008·12 cites·36 claims
- 4685US7285466B2Methods of forming metal oxide semiconductor (MOS) transistors having three dimensional channelsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Oct 23, 2007·28 cites·31 claims
- 4785US7071517B2Self-aligned semiconductor contact structures and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 4, 2006·28 cites·12 claims
- 4885US7015106B2Double gate field effect transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Mar 21, 2006·35 cites·13 claims
- 4984US8174065B2Semiconductor device having vertical transistor and method of fabricating the sameKIM BONG-SOO·Filed 2010·Granted May 8, 2012·7 cites·17 claims
- 5084US7381601B2Methods of fabricating field effect transistors having multiple stacked channelsSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 3, 2008·24 cites·38 claims
Showing the top 50 of 164 patent records by PatentIndex Score.
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