Inventor · disambiguated record
Robin Hsin Kuo Chao
Also filed as: CHAO ROBIN · CHAO ROBIN H · CHAO ROBIN HSIN KUO · CHAO ROBIN HSIN-KU
39 granted patents·51 pending applications·106 citations·filing 2013–2025
97Inventor score
Top patents by PatentIndex Score
90 records- 0197US9831324B1Self-aligned inner-spacer replacement process using implantationIBM·Filed 2016·Granted Nov 28, 2017·14 cites·11 claims
- 0296US10903315B2Formation of dielectric layer as etch-stop for source and drain epitaxy disconnectionIBM·Filed 2018·Granted Jan 26, 2021·12 cites·13 claims
- 0395US10431651B1Nanosheet transistor with robust source/drain isolation from substrateIBM·Filed 2018·Granted Oct 1, 2019·12 cites·15 claims
- 0495US10243060B2Uniform low-k inner spacer module in gate-all-around (GAA) transistorsIBM·Filed 2017·Granted Mar 26, 2019·13 cites·20 claims
- 0594US11079337B1Secure wafer inspection and identificationIBM·Filed 2020·Granted Aug 3, 2021·3 cites·20 claims
- 0692US9978678B1Vertically integrated nanosheet fuseIBM·Filed 2017·Granted May 22, 2018·5 cites·4 claims
- 0790US10079233B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2016·Granted Sep 18, 2018·5 cites·16 claims
- 0887US10475905B2Techniques for vertical FET gate length controlIBM·Filed 2018·Granted Nov 12, 2019·4 cites·18 claims
- 0987US10374034B1Undercut control in isotropic wet etch processesIBM·Filed 2018·Granted Aug 6, 2019·5 cites·20 claims
- 1085US10804410B2Bottom channel isolation in nanosheet transistorsIBM·Filed 2018·Granted Oct 13, 2020·3 cites·5 claims
- 1185US10658459B2Nanosheet transistor with robust source/drain isolation from substrateIBM·Filed 2019·Granted May 19, 2020·3 cites·6 claims
- 1285US10636694B2Dielectric isolation in gate-all-around devicesIBM·Filed 2019·Granted Apr 28, 2020·3 cites·20 claims
- 1384US10741639B2Formation of dielectric layer as etch-stop for source and drain epitaxy disconnectionIBM·Filed 2018·Granted Aug 11, 2020·3 cites·10 claims
- 1482US10541239B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2018·Granted Jan 21, 2020·2 cites·20 claims
- 1582US10453736B2Dielectric isolation in gate-all-around devicesIBM·Filed 2017·Granted Oct 22, 2019·3 cites·18 claims
- 1681US11990530B2Replacement-channel fabrication of III-V nanosheet devicesIBM·Filed 2023·Granted May 21, 2024·0 cites·20 claims
- 1779US10930793B2Bottom channel isolation in nanosheet transistorsIBM·Filed 2017·Granted Feb 23, 2021·2 cites·7 claims
- 1878US11568101B2Predictive multi-stage modelling for complex process controlIBM·Filed 2019·Granted Jan 31, 2023·2 cites·16 claims
- 1978US10756178B2Self-limiting and confining epitaxial nucleationIBM·Filed 2019·Granted Aug 25, 2020·1 cites·20 claims
- 2078US10692203B2Measuring defectivity by equipping model-less scatterometry with cognitive machine learningIBM·Filed 2018·Granted Jun 23, 2020·3 cites·20 claims
- 2176US12471354B2Dipole threshold voltage tuning for high voltage transistor stacksINTEL CORP·Filed 2020·Granted Nov 11, 2025·1 cites·20 claims
- 2276US11199505B2Machine learning enhanced optical-based screening for in-line wafer testingIBM·Filed 2018·Granted Dec 14, 2021·2 cites·18 claims
- 2376US10340341B1Self-limiting and confining epitaxial nucleationIBM·Filed 2017·Granted Jul 2, 2019·1 cites·9 claims
- 2476US10043748B1Vertically integrated nanosheet fuseIBM·Filed 2017·Granted Aug 7, 2018·1 cites·16 claims
- 2573US11742409B2Replacement-channel fabrication of III-V nanosheet devicesIBM·Filed 2021·Granted Aug 29, 2023·0 cites·11 claims
- 2673US10355103B2Long channels for transistorsIBM·Filed 2017·Granted Jul 16, 2019·1 cites·14 claims
- 2771US10529850B2Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profileIBM·Filed 2018·Granted Jan 7, 2020·1 cites·5 claims
- 2871US2025324690A1Nanoribbon-based transistors with etch stop layer to assist subfin removalINTEL CORP·Filed 2025·Application pending·0 cites
- 2970US10553723B2Method for forming doped extension regions in a structure having superimposed nanowiresCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Feb 4, 2020·1 cites·8 claims
- 3070US2025323127A1Integrated circuit structure with deep via bar width tuningINTEL CORP·Filed 2025·Application pending·0 cites
- 3166US11842998B2Semiconductor device and method of forming the semiconductor deviceIBM·Filed 2019·Granted Dec 12, 2023·0 cites·20 claims
- 3265US2025112120A1Integrated circuit structure with deep via bar width tuningINTEL CORP·Filed 2023·Application pending·0 cites
- 3364US10756177B2Self-limiting and confining epitaxial nucleationIBM·Filed 2019·Granted Aug 25, 2020·0 cites·20 claims
- 3462US10978576B2Techniques for vertical FET gate length controlELPIS TECH INC·Filed 2019·Granted Apr 13, 2021·0 cites·19 claims
- 3561US10319676B2Vertically integrated nanosheet fuseIBM·Filed 2018·Granted Jun 11, 2019·0 cites·20 claims
- 3660US11081567B2Replacement-channel fabrication of III-V nanosheet devicesIBM·Filed 2018·Granted Aug 3, 2021·0 cites·16 claims
- 3760US10985273B2Vertical field-effect transistor including a fin having sidewalls with a tapered bottom profileIBM·Filed 2019·Granted Apr 20, 2021·0 cites·20 claims
- 3860US2024290835A1Nanoribbon-based transistors with etch stop layer to assist subfin removalINTEL CORP·Filed 2023·Application pending·0 cites
- 3960US2025311273A1Zero diffusion break for improving transistor densityINTEL CORP·Filed 2024·Application pending·0 cites
- 4059US12046680B2Inner spacer formation for nanosheet transistorsIBM·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 4158US10411120B2Self-aligned inner-spacer replacement process using implantationIBM·Filed 2017·Granted Sep 10, 2019·0 cites·14 claims
- 4258US10276695B2Self-aligned inner-spacer replacement process using implantationIBM·Filed 2017·Granted Apr 30, 2019·0 cites·15 claims
- 4358US2025308982A1Self-aligned patterned trench isolations for yield and performance improvementsINTEL CORP·Filed 2024·Application pending·0 cites
- 4458US2025386580A1Integrated circuit structures with backside isolation structureINTEL CORP·Filed 2024·Application pending·0 cites
- 4558US2025386578A1Contact over active gate structures with widened and lower capacitance insulating cap layers for advanced integrated circuit structure fabricationINTEL CORP·Filed 2024·Application pending·0 cites
- 4657US2025311272A1Gate-all-around devices with modulated number of active nanoribbonsINTEL CORP·Filed 2024·Application pending·0 cites
- 4757US2025311428A1Ribbon complementary fet (cfet) metal gate multi-voltage threshold integrationINTEL CORP·Filed 2024·Application pending·0 cites
- 4857US2025311427A1Deep via backside (dvb) partial recess for capacitance reduction in complementary fet (cfet) transistorsINTEL CORP·Filed 2024·Application pending·0 cites
- 4956US10312326B1Long channels for transistorsIBM·Filed 2017·Granted Jun 4, 2019·0 cites·14 claims
- 5056US2025311353A1Dielectric wall used to separate gate dielectric between adjacent devicesINTEL CORP·Filed 2024·Application pending·0 cites
Showing the top 50 of 90 patent records by PatentIndex Score.
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