Inventor · disambiguated record
Tzu-Ching Lin
Also filed as: LIN TZU-CHING
26 granted patents·8 pending applications·50 citations·filing 2009–2025
94Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD29ACER INC2HUANG BORH-RAN1LIN CHING-FUH1UNIV NAT TAIWAN SCIENCE TECH1
Top patents by PatentIndex Score
34 records- 0195US10453943B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 22, 2019·11 cites·20 claims
- 0295US10038095B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 31, 2018·11 cites·20 claims
- 0394US11823949B2FinFet with source/drain regions comprising an insulator layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Nov 21, 2023·2 cites·20 claims
- 0494US11355641B2Merged source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 7, 2022·2 cites·20 claims
- 0591US2025357189A1Method for forming finfet with source/drain regions comprising an insulator layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0690US10510607B1Semiconductor device convex source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·5 cites·20 claims
- 0790US9905641B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 27, 2018·5 cites·20 claims
- 0889US10950730B2Merged source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 16, 2021·3 cites·20 claims
- 0989US2025324639A1Fets and methods of forming fetsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1085US11205713B2FinFET having a non-faceted top surface portion for a source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 21, 2021·2 cites·20 claims
- 1184US10867861B2Fin field-effect transistor device and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·3 cites·20 claims
- 1283US12402344B2FETS and methods of forming FETSTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Aug 26, 2025·0 cites·20 claims
- 1383US2024258429A1Merged source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1482US12469744B2Method for forming FinFET with source/drain regions comprising an insulator layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 11, 2025·0 cites·20 claims
- 1582US10468482B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 5, 2019·2 cites·20 claims
- 1681US12243784B2Silicon phosphide semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 4, 2025·0 cites·20 claims
- 1779US11961912B2Merged source/drain featuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 16, 2024·0 cites·20 claims
- 1879US11600715B2FETs and methods of forming FETsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 7, 2023·1 cites·20 claims
- 1975US11004725B2Method of forming a FinFET device with gaps in the source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·1 cites·20 claims
- 2072US11121255B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 14, 2021·0 cites·20 claims
- 2171US11749567B2Silicon phosphide semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Sep 5, 2023·0 cites·20 claims
- 2266US10763366B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 1, 2020·0 cites·20 claims
- 2365US11127637B2Semiconductor device convex source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 21, 2021·0 cites·19 claims
- 2464US11004745B2Semiconductor device convex source/drain regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted May 11, 2021·0 cites·20 claims
- 2564US10991795B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·0 cites·20 claims
- 2663US10651309B2V-shape recess profile for embedded source/drain epitaxyTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 12, 2020·0 cites·20 claims
- 2762US11069578B2Method of manufacturing a semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 20, 2021·0 cites·20 claims
- 2862US8771558B2Method of manufacturing anti-counterfeit ink and anti-counterfeit tag and method of manufacturing the sameHUANG BORH-RAN·Filed 2010·Granted Jul 8, 2014·2 cites·7 claims
- 2952US2025148184A1Integrated circuit design flow with layout adjustmentTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3047US10991630B2Semiconductor device and methodTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 27, 2021·0 cites·20 claims
- 3145US2010285716A1Fabrication method of carbon nanotube field emission cathodeUNIV NAT TAIWAN SCIENCE TECH·Filed 2009·Application pending·0 cites
- 3243US2015002422A1Electronic device and method of controlling the sameACER INC·Filed 2014·Application pending·0 cites
- 3342US2015052432A1Electronic device and control methodACER INC·Filed 2013·Application pending·0 cites
- 3437US2013143407A1Method for producing a thin single crystal silicon having large surface areaLIN CHING-FUH·Filed 2012·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →