Inventor · disambiguated record
Hui-Cheng Chang
Also filed as: CHANG HUI-CHENG
27 granted patents·1 pending application·23 citations·filing 2013–2025
93Inventor score
Top patents by PatentIndex Score
28 records- 0194US2025366188A1Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0292US12094757B2Method for manufacturing semiconductor device with semiconductor capping layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Sep 17, 2024·1 cites·20 claims
- 0387US11688625B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jun 27, 2023·1 cites·20 claims
- 0487US9805968B2Vertical structure having an etch stop over portion of the sourceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 31, 2017·3 cites·20 claims
- 0586US10991695B2Method for manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 27, 2021·2 cites·20 claims
- 0682US8927418B1Systems and methods for reducing contact resistivity of semiconductor devicesTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 6, 2015·5 cites·20 claims
- 0781US9837504B2Method of modifying capping layer in semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 5, 2017·3 cites·20 claims
- 0879US12471361B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 11, 2025·0 cites·20 claims
- 0979US9590090B2Method of forming channel of gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Mar 7, 2017·3 cites·20 claims
- 1073US10622356B2Semiconductor device and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 14, 2020·1 cites·20 claims
- 1172US11257819B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 22, 2022·0 cites·20 claims
- 1269US9966448B2Method of making a silicide beneath a vertical structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted May 8, 2018·2 cites·20 claims
- 1366US11127837B2Method of forming MOSFET structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 21, 2021·0 cites·20 claims
- 1465US9214513B2Fin structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 15, 2015·1 cites·19 claims
- 1562US11056486B2Semiconductor device with multiple threshold voltage and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 6, 2021·0 cites·20 claims
- 1661US9166035B2Delta doping layer in MOSFET source/drain regionTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Oct 20, 2015·1 cites·18 claims
- 1759US10756199B2Fin field effect transistors having conformal oxide layers and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 25, 2020·0 cites·20 claims
- 1859US9166001B2Vertical structure and method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Oct 20, 2015·0 cites·20 claims
- 1958US10879061B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 2058US9343412B2Method of forming MOSFET structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 17, 2016·0 cites·16 claims
- 2157US10461170B2Method of forming MOSFET structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 29, 2019·0 cites·20 claims
- 2256US10276725B2Gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·0 cites·20 claims
- 2356US9577093B2Vertical structure and method of forming semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Feb 21, 2017·0 cites·20 claims
- 2453US10276562B2Semiconductor device with multiple threshold voltage and method of fabricating the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Apr 30, 2019·0 cites·17 claims
- 2552US10269921B2Fin field effect transistors having conformal oxide layers and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 23, 2019·0 cites·20 claims
- 2650US10181397B2Semiconductor device and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 15, 2019·0 cites·20 claims
- 2749US9911812B2Semiconductor device having a fin shell covering a fin coreTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Mar 6, 2018·0 cites·20 claims
- 2847US9515188B2Fin field effect transistors having conformal oxide layers and methods of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 6, 2016·0 cites·20 claims
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