Inventor · disambiguated record
King Owyang
Also filed as: OWYANG KING
36 granted patents·1 pending application·2,235 citations·filing 1980–2016
98Inventor score
Top patents by PatentIndex Score
37 records- 0196US5757081ASurface mount and flip chip technology for total integrated circuit isolationSILICONIX INC·Filed 1996·Granted May 26, 1998·224 cites·8 claims
- 0296US5639676ATrenched DMOS transistor fabrication having thick termination region oxideSILICONIX INC·Filed 1996·Granted Jun 17, 1997·138 cites·6 claims
- 0395US5753529ASurface mount and flip chip technology for total integrated circuit isolationSILICONIX INC·Filed 1995·Granted May 19, 1998·183 cites·7 claims
- 0495US5578851ATrenched DMOS transistor having thick field oxide in termination regionSILICONIX INC·Filed 1996·Granted Nov 26, 1996·136 cites·5 claims
- 0595US4412142AIntegrated circuit incorporating low voltage and high voltage semiconductor devicesGEN ELECTRIC·Filed 1980·Granted Oct 25, 1983·162 cites·14 claims
- 0694US5767578ASurface mount and flip chip technology with diamond film passivation for total integated circuit isolationSILICONIX INC·Filed 1996·Granted Jun 16, 1998·176 cites·19 claims
- 0793US5532179AMethod of making a field effect trench transistor having lightly doped epitaxial region on the surface portion thereofSILICONIX INC·Filed 1995·Granted Jul 2, 1996·112 cites·2 claims
- 0893US5517379AReverse battery protection device containing power MOSFETSILICONIX INC·Filed 1993·Granted May 14, 1996·115 cites·11 claims
- 0993US5316959ATrenched DMOS transistor fabrication using six masksSILICONIX INC·Filed 1992·Granted May 31, 1994·117 cites·8 claims
- 1092US5404040AStructure and fabrication of power MOSFETs, including termination structuresSILICONIX INC·Filed 1993·Granted Apr 4, 1995·104 cites·31 claims
- 1191US5468982ATrenched DMOS transistor with channel block at cell trench cornersSILICONIX INC·Filed 1994·Granted Nov 21, 1995·89 cites·21 claims
- 1288US5132753AOptimization of BV and RDS-on by graded doping in LDD and other high voltage ICsSILICONIX INC·Filed 1990·Granted Jul 21, 1992·73 cites·12 claims
- 1387US5910669AField effect Trench transistor having lightly doped epitaxial region on the surface portion thereofSILICONIX INC·Filed 1992·Granted Jun 8, 1999·62 cites·7 claims
- 1486US8471381B2Complete power management system implemented in a single surface mount packageOWYANG KING·Filed 2006·Granted Jun 25, 2013·13 cites·22 claims
- 1585US6744124B1Semiconductor die package including cup-shaped leadframeSILICONIX INC·Filed 1999·Granted Jun 1, 2004·75 cites·9 claims
- 1684US7033876B2Trench MIS device having implanted drain-drift region and thick bottom oxide and process for manufacturing the sameSILICONIX INC·Filed 2002·Granted Apr 25, 2006·28 cites·15 claims
- 1784US4505029ASemiconductor device with built-up low resistance contactGEN ELECTRIC·Filed 1983·Granted Mar 19, 1985·60 cites·8 claims
- 1883US5521409AStructure of power mosfets, including termination structuresSILICONIX INC·Filed 1994·Granted May 28, 1996·47 cites·20 claims
- 1982US7394150B2Semiconductor package including die interposed between cup-shaped lead frame and lead frame having mesas and valleysSILICONIX INC·Filed 2004·Granted Jul 1, 2008·35 cites·17 claims
- 2082US7238551B2Method of fabricating semiconductor package including die interposed between cup-shaped lead frame having mesas and valleysSILICONIX INC·Filed 2004·Granted Jul 3, 2007·37 cites·18 claims
- 2179US5304831ALow on-resistance power MOS technologySILICONIX INC·Filed 1992·Granted Apr 19, 1994·62 cites·21 claims
- 2276US8269263B2High current density power field effect transistorLI JIAN·Filed 2008·Granted Sep 18, 2012·6 cites·18 claims
- 2375US8928138B2Complete power management system implemented in a single surface mount packageOWYANG KING·Filed 2010·Granted Jan 6, 2015·3 cites·19 claims
- 2475US7326995B2Trench MIS device having implanted drain-drift region and thick bottom oxideSILICONIX INC·Filed 2005·Granted Feb 5, 2008·5 cites·12 claims
- 2572US4803533AIGT and MOSFET devices having reduced channel widthGEN ELECTRIC·Filed 1986·Granted Feb 7, 1989·44 cites·6 claims
- 2668US5426325AMetal crossover in high voltage IC with graduated doping controlSILICONIX INC·Filed 1993·Granted Jun 20, 1995·41 cites·16 claims
- 2767US5429964ALow on-resistance power MOS technologySILICONIX INC·Filed 1994·Granted Jul 4, 1995·35 cites·22 claims
- 2866US4794432AMosfet structure with substrate coupled sourceGEN ELECTRIC·Filed 1987·Granted Dec 27, 1988·22 cites·9 claims
- 2962US9306056B2Semiconductor device with trench-like feed-throughsPATTANAYAK DEVA·Filed 2009·Granted Apr 5, 2016·2 cites·21 claims
- 3059US9093359B2Complete power management system implemented in a single surface mount packageOWYANG KING·Filed 2006·Granted Jul 28, 2015·1 cites·21 claims
- 3155US6909170B2Semiconductor assembly with package using cup-shaped lead-frameSILICONIX INC·Filed 2002·Granted Jun 21, 2005·6 cites·8 claims
- 3253US4475280AMethod of making an integrated circuit incorporating low voltage and high voltage semiconductor devicesGEN ELECTRIC·Filed 1982·Granted Oct 9, 1984·13 cites·12 claims
- 3351US2015331438A1Complete power management system implemented in a single surface mount packageVISHAY SILICONIX·Filed 2015·Application pending·0 cites
- 3448US4345266ATransistor having improved turn-off time and second breakdown characteristics with bi-level emitter structureGEN ELECTRIC·Filed 1981·Granted Aug 17, 1982·9 cites·1 claims
- 3547US10032901B2Semiconductor device with trench-like feed-throughsVISHAY SILICONIX·Filed 2016·Granted Jul 24, 2018·0 cites·15 claims
- 3646US9040356B2Semiconductor including cup-shaped leadframe packaging techniquesCHANG MIKE·Filed 2009·Granted May 26, 2015·0 cites·24 claims
- 3746US7595547B1Semiconductor die package including cup-shaped leadframeVISHAY SILICONIX·Filed 2005·Granted Sep 29, 2009·0 cites·10 claims
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