Inventor · disambiguated record
Weon-Ho Park
Also filed as: PARK WEON-HO
24 granted patents·13 pending applications·193 citations·filing 1999–2013
95Inventor score
Top patents by PatentIndex Score
37 records- 0190US7323740B2Single chip data processing device with embedded nonvolatile memory and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 29, 2008·58 cites·37 claims
- 0289US6660589B2Semiconductor devices and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 9, 2003·43 cites·11 claims
- 0376US6555869B2Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 29, 2003·17 cites·9 claims
- 0471US7408219B2Nonvolatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 5, 2008·3 cites·10 claims
- 0570US6818509B2Methods of fabricating electrically erasable programmable read-only memory (EEPROM) devices including multilayer sense and select transistor gatesSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Nov 16, 2004·12 cites·13 claims
- 0670US6323517B1Non-volatile memory device with single-layered overwriting transistorSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Nov 27, 2001·16 cites·12 claims
- 0769US7008847B2Semiconductor device having electrically erasable programmable read-only memory (EEPROM) and mask-ROM and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Mar 7, 2006·11 cites·31 claims
- 0867US7598139B2Single chip data processing device with embedded nonvolatile memory and method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 6, 2009·3 cites·20 claims
- 0963US8318583B2Method of forming isolation structure of semiconductor deviceJEONG YONG-SIK·Filed 2009·Granted Nov 27, 2012·3 cites·14 claims
- 1063US7588983B2EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Sep 15, 2009·2 cites·13 claims
- 1163US7387933B2EEPROM device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jun 17, 2008·2 cites·8 claims
- 1262US8390075B2Semiconductor memory devices and methods of fabricating the samePARK WEON-HO·Filed 2009·Granted Mar 5, 2013·2 cites·14 claims
- 1359US7166887B2EEPROM device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 23, 2007·7 cites·14 claims
- 1455US7352026B2EEPROM cell and EEPROM device with high integration and low source resistance and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 1, 2008·5 cites·15 claims
- 1552US2008293200A1Method of fabricating nonvolatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 1647US7364973B2Method of manufacturing NOR-type mask ROM device and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Apr 29, 2008·0 cites·17 claims
- 1747US6197636B1Electrically erasable programmable read-only memory device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Mar 6, 2001·3 cites·6 claims
- 1847US2008268592A1Flash memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 1946US6967388B2Semiconductor devices and methods for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 22, 2005·2 cites·12 claims
- 2043US8039889B2Non-volatile memory devices including stepped source regions and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Oct 18, 2011·0 cites·15 claims
- 2143US2008111181A1Nonvolatile memory devices, methods of operating the same and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2242US2008142869A1Non-volatile memory device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2342US2008157163A1EEPROM device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 2441US2007262373A1Non-volatile memory integrated circuit device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Application pending·0 cites
- 2541US2007132005A1Electrically Erasable and Programmable Read Only Memories Including Variable Width Overlap Regions and Methods of Fabricating the SameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 2640US7429511B2Method of forming a tunneling insulating layer in nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 30, 2008·0 cites·7 claims
- 2739US8097913B2Electrically erasable and programmable read only memory device comprising common source region and method of manufacturing samePARK WEON-HO·Filed 2007·Granted Jan 17, 2012·0 cites·23 claims
- 2839US7852698B2Voltage supply device and nonvolatile memory device having the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 14, 2010·0 cites·15 claims
- 2939US7317223B2Memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Jan 8, 2008·0 cites·3 claims
- 3039US7253058B2Method of manufacturing NOR-type mask ROM device and semiconductor device including the sameSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Aug 7, 2007·0 cites·14 claims
- 3139US2014217490A1Nonvolatile memory device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3239US2007018230A1Eeprom and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3338US2009127612A1Semiconductor device having a gate structurePARK WEON-HO·Filed 2008·Application pending·0 cites
- 3437US2006145237A1Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 3536US6483145B1Electrically erasable programmable read-only memory (EEPROM) devices including multilayer sense and select transistor gatesSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Nov 19, 2002·4 cites·8 claims
- 3636US2014043896A1Method of preventing program-disturbances for a non-volatile semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Application pending·0 cites
- 3730US2003089944A1Electrically erasable programmable read-only memory (EEPROM) devices including multilayer sense and select transistor gatesFiled 2002·Application pending·0 cites
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