Inventor · disambiguated record
Shinichiro Takatani
Also filed as: TAKATANI SHINICHIRO
37 granted patents·15 pending applications·370 citations·filing 1989–2023
97Inventor score
Top patents by PatentIndex Score
52 records- 0197US8335479B2Semiconductor integrated circuit, RF module using the same, and radio communication terminal device using the sameKOYA SHIGEKI·Filed 2012·Granted Dec 18, 2012·52 cites·5 claims
- 0288US6342712B1Semiconductor storage device with ferrielectric capacitor and metal-oxide isolationHITACHI LTD·Filed 1998·Granted Jan 29, 2002·57 cites·7 claims
- 0386US9356127B2Layout structure of heterojunction bipolar transistorsWIN SEMICONDUCTORS CORP·Filed 2013·Granted May 31, 2016·10 cites·19 claims
- 0484US8159282B2Semiconductor integrated circuit and high frequency module with the sameKATOH KAORU·Filed 2009·Granted Apr 17, 2012·13 cites·18 claims
- 0583US8200167B2Semiconductor integrated circuit, RF module using the same, and radio communication terminal device using the sameKOYA SHIGEKI·Filed 2007·Granted Jun 12, 2012·8 cites·5 claims
- 0683US5181087ASemiconductor device and method of producing the sameHITACHI LTD·Filed 1989·Granted Jan 19, 1993·37 cites·52 claims
- 0781US9673186B2Semiconductor integrated circuitWIN SEMICONDUCTORS CORP·Filed 2015·Granted Jun 6, 2017·4 cites·25 claims
- 0879US6800889B2Semiconductor device and fabrication method thereofHITACHI LTD·Filed 2002·Granted Oct 5, 2004·21 cites·22 claims
- 0977US9064704B2Integrated circuits with ESD protection devicesWIN SEMICONDUCTORS CORP·Filed 2013·Granted Jun 23, 2015·5 cites·20 claims
- 1076US7783265B2Switching element, antenna switch circuit and radio frequency module using the sameRENESAS TECH CORP·Filed 2008·Granted Aug 24, 2010·4 cites·19 claims
- 1174US6635913B2Semiconductor storage deviceHITACHI LTD·Filed 2001·Granted Oct 21, 2003·14 cites·4 claims
- 1273US6396092B1Semiconductor device and method for manufacturing the sameHITACHI LTD·Filed 1998·Granted May 28, 2002·28 cites·10 claims
- 1371US7899412B2Switching element, antenna switch circuit and radio frequency module using the sameRENESAS ELECTRONICS CORP·Filed 2010·Granted Mar 1, 2011·2 cites·20 claims
- 1468US8970998B2Compound semiconductor ESD protection devicesWIN SEMICONDUCTOR CORP·Filed 2012·Granted Mar 3, 2015·3 cites·45 claims
- 1567US5025751ASolid film growth apparatusHITACHI LTD·Filed 1989·Granted Jun 25, 1991·16 cites·26 claims
- 1666US9899507B2Nitride semiconductor transistor deviceSHIROTA RIICHIRO·Filed 2016·Granted Feb 20, 2018·1 cites·16 claims
- 1766US7425876B2Antenna switch circuit and high frequency module having the sameRENESAS TECH CORP·Filed 2005·Granted Sep 16, 2008·3 cites·10 claims
- 1863US5508554ASemicoductor device having defect type compound layer between single crystal substrate and single crystal growth layerHITACHI LTD·Filed 1994·Granted Apr 16, 1996·37 cites·25 claims
- 1962US10256329B2Heterojunction bipolar transistorWIN SEMICONDUCTORS CORP·Filed 2015·Granted Apr 9, 2019·1 cites·16 claims
- 2059US9070685B2Compound semiconductor integrated circuitTAKATANI SHINICHIRO·Filed 2012·Granted Jun 30, 2015·2 cites·17 claims
- 2158US8969973B2Multi-gate semiconductor devicesTAKATANI SHINICHIRO·Filed 2010·Granted Mar 3, 2015·1 cites·6 claims
- 2257US6818523B2Semiconductor storage device manufacturing method which forms a hydrogen diffusion inhibiting layerHITACHI LTD·Filed 2003·Granted Nov 16, 2004·5 cites·4 claims
- 2356US5373191ASemiconductor device and method of producing the sameHITACHI LTD·Filed 1992·Granted Dec 13, 1994·14 cites·5 claims
- 2455US2023197793A1Field-effect transistor deviceTAKATANI SHINICHIRO·Filed 2022·Application pending·0 cites
- 2555US2023387232A1Radio frequency device and radio frequency front-end apparatusXIAMEN SANAN INTEGRATED CIRCUIT CO LTD·Filed 2023·Application pending·0 cites
- 2654US2014097515A1Compound semiconductor integrated circuit with three-dimensionally formed componentsWIN SEMICONDUCTORS CORP·Filed 2013·Application pending·0 cites
- 2753US6144052ASemiconductor device and its manufactureHITACHI LTD·Filed 1996·Granted Nov 7, 2000·13 cites·42 claims
- 2852US11201233B2Compound semiconductor heterojunction bipolar transistorTAKATANI SHINICHIRO·Filed 2020·Granted Dec 14, 2021·0 cites·15 claims
- 2951US8676132B2Semiconductor integrated circuit, RF module using the same, and radio communication terminal device using the sameKOYA SHIGEKI·Filed 2012·Granted Mar 18, 2014·0 cites·4 claims
- 3051US8385847B2Switching element, antenna switch circuit and radio frequency module using the sameRENESAS ELECTRONICS CORP·Filed 2011·Granted Feb 26, 2013·0 cites·20 claims
- 3149US11489050B2Vertical nitride semiconductor transistor deviceTAKATANI SHINICHIRO·Filed 2021·Granted Nov 1, 2022·0 cites·20 claims
- 3249US2015279832A1Compound semiconductor integrated circuit with three-dimensionally formed componentsWIN SEMICONDUCTORS CORP·Filed 2015·Application pending·0 cites
- 3348US6653668B2Radio frequency modules and modules for moving target detectionHITACHI LTD·Filed 2002·Granted Nov 25, 2003·3 cites·12 claims
- 3448US6469326B2Radio frequency modules and modules for moving target detectionHITACHI LTD·Filed 2001·Granted Oct 22, 2002·3 cites·12 claims
- 3548US2006118951A1Switching element, antenna switch circuit and radio frequency module using the sameOGAWA TAKASHI·Filed 2005·Application pending·0 cites
- 3648US2013140671A1Compound semiconductor integrated circuit with three-dimensionally formed componentsTAKATANI SHINICHIRO·Filed 2011·Application pending·0 cites
- 3747US7256437B2Semiconductor storage device which includes a hydrogen diffusion inhibiting layerRENESAS TECH CORP·Filed 2004·Granted Aug 14, 2007·2 cites·21 claims
- 3845US11211464B2Normally-off nitride semiconductor transistor deviceSHIROTA RIICHIRO·Filed 2019·Granted Dec 28, 2021·0 cites·24 claims
- 3944US6787817B2Compound semiconductor having a doped layer between the gate and an ohmic contact of an active regionRENESAS TECH CORP·Filed 2002·Granted Sep 7, 2004·2 cites·6 claims
- 4043US8330524B2Semiconductor integrated circuit and high frequency module with the sameKATOH KAORU·Filed 2012·Granted Dec 11, 2012·0 cites·18 claims
- 4143US2016247797A1Layout structure of heterojunction bipolar transistorsWIN SEMICONDUCTORS CORP·Filed 2016·Application pending·0 cites
- 4243US2009026499A1Semiconductor integrated circuit device and semiconductor switching device using thereofKIKAWA TAKESHI·Filed 2008·Application pending·0 cites
- 4341US8964342B2Compound semiconductor ESD protection devicesWIN SEMICONDUCTORS CORP·Filed 2012·Granted Feb 24, 2015·0 cites·21 claims
- 4439US2014231876A1pHEMT and HBT integrated epitaxial structureWIN SEMICONDUCTORS CORP·Filed 2014·Application pending·0 cites
- 4539US2014209926A1Semiconductor integrated circuitWIN SEMICONDUCTORS CORP·Filed 2013·Application pending·0 cites
- 4637US5399230AMethod and apparatus for etching compound semiconductorHITACHI LTD·Filed 1993·Granted Mar 21, 1995·9 cites·28 claims
- 4736US10096583B2Method for fabricating a semiconductor integrated chipWIN SEMICONDUCTORS CORP·Filed 2016·Granted Oct 9, 2018·0 cites·5 claims
- 4836US2013320402A1pHEMT HBT INTEGRATED EPITAXIAL STRUCTURE AND A FABRICATION METHOD THEREOFWIN SEMICONDUCTORS CORP·Filed 2012·Application pending·0 cites
- 4934US2002047147A1Semiconductor device and process for producing the semiconductor deviceFiled 2001·Application pending·0 cites
- 5034US2007295994A1Hetero junction bipolar transistorMOCHIZUKI KAZUHIRO·Filed 2007·Application pending·0 cites
Showing the top 50 of 52 patent records by PatentIndex Score.
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