Inventor · disambiguated record
Chiang-Ming Chuang
Also filed as: CHUANG CHIANG-MING
30 granted patents·1 pending application·58 citations·filing 2004–2025
95Inventor score
Top patents by PatentIndex Score
31 records- 0191US2025365949A1Semiconductor device having non-continuous wall structure surrounding stacked gate structure including conductive layer disposed between segmented portions of the wall structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0290US11018233B2Flash memory cell structure with step-shaped floating gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 25, 2021·4 cites·20 claims
- 0387US12464714B2Semiconductor device having non-continuous wall structure surrounding a stacked gate structure including a conductive layer disposed between segmented portions of the wall structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 0487US10163641B2Memory with a raised dummy feature surrounding a cell regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 25, 2018·5 cites·20 claims
- 0583US9728543B1Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 8, 2017·4 cites·20 claims
- 0681US9418948B2Method of making bond padTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 16, 2016·3 cites·20 claims
- 0779US7268065B2Methods of manufacturing metal-silicide featuresTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Sep 11, 2007·18 cites·19 claims
- 0878US7986029B2Dual SOI structureTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Jul 26, 2011·8 cites·18 claims
- 0975US11764285B2Method of manufacturing semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 19, 2023·0 cites·20 claims
- 1075US9263316B2Method for forming a semiconductor device with void-free shallow trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 16, 2016·3 cites·18 claims
- 1175US7781316B2Methods of manufacturing metal-silicide featuresTAIWAN SEMICONDUCTOR MFG·Filed 2007·Granted Aug 24, 2010·4 cites·7 claims
- 1272US9947759B1Semiconductor device having milti-height structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 17, 2018·2 cites·20 claims
- 1371US11925017B2Semiconductor device having a wall structure surrounding a stacked gate structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Mar 5, 2024·0 cites·20 claims
- 1469US11411097B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·20 claims
- 1569US7534671B2Method for integrally forming an electrical fuse device and a MOS transistorTAIWAN SEMICONDUCTOR MFG·Filed 2008·Granted May 19, 2009·3 cites·14 claims
- 1668US10658479B2Flash memory cell structure with step-shaped floating gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 19, 2020·1 cites·20 claims
- 1768US7361968B2Method for integrally forming an electrical fuse device and a MOS transistorTAIWAN SEMICONDUCTOR MFG·Filed 2006·Granted Apr 22, 2008·3 cites·6 claims
- 1861US11121141B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 14, 2021·0 cites·20 claims
- 1960US10825914B2Manufacturing method of semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 3, 2020·0 cites·20 claims
- 2058US10672777B2Method of manufacturing semiconductor device having multi-height structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 2, 2020·0 cites·20 claims
- 2157US10535670B2Non-volatile memory having an erase gate formed between two floating gates with two word lines formed on other sides and a method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jan 14, 2020·0 cites·20 claims
- 2257US10283510B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 7, 2019·0 cites·24 claims
- 2356US9252109B2Method of making bond padTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Feb 2, 2016·0 cites·14 claims
- 2454US10103235B2Gate structure with multiple spacersTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 16, 2018·0 cites·20 claims
- 2554US9768182B2Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Sep 19, 2017·0 cites·20 claims
- 2651US10211214B2Semiconductor device having milti-height structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 19, 2019·0 cites·20 claims
- 2749US9653302B2Gate structure with multiple spacer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted May 16, 2017·0 cites·20 claims
- 2845US8796851B2Bonding pad and method of making sameCHUANG CHIANG-MING·Filed 2012·Granted Aug 5, 2014·0 cites·20 claims
- 2943US9899395B1Semiconductor device and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Feb 20, 2018·0 cites·20 claims
- 3041US7687861B2Silicided regions for NMOS and PMOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Mar 30, 2010·0 cites·25 claims
- 3136US9997479B1Method for manufacturing redistribution layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jun 12, 2018·0 cites·20 claims
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