Inventor · disambiguated record
Toshiya Uemura
Also filed as: UEMURA TOSHIYA
68 granted patents·13 pending applications·1,818 citations·filing 1989–2023
99Inventor score
Files withTOYODA GOSEI KK70UEMURA TOSHIYA6NATIONAL UNIV CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM1TOYOTA CHUO KENKYUSHO KK1
Top patents by PatentIndex Score
81 records- 0194US7754514B2Method of making a light emitting elementTOYODA GOSEI KK·Filed 2007·Granted Jul 13, 2010·48 cites·10 claims
- 0294US7646036B2Electrode and Group III nitride-based compound semiconductor light-emitting device having the electrodeTOYOTA CHUO KENKYUSHO KK·Filed 2008·Granted Jan 12, 2010·30 cites·20 claims
- 0394US6331450B1Method of manufacturing semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 1999·Granted Dec 18, 2001·137 cites·23 claims
- 0493US6310364B1Light-emitting apparatusTOYODA GOSEI KK·Filed 1999·Granted Oct 30, 2001·134 cites·13 claims
- 0591US6794690B2Group III nitride compound semiconductor light-emitting elementTOYODA GOSEI KK·Filed 2002·Granted Sep 21, 2004·88 cites·7 claims
- 0690US7576363B2Group III nitride compound semiconductor light emitting deviceTOYODA GOSEI KK·Filed 2005·Granted Aug 18, 2009·29 cites·21 claims
- 0790US7176623B2Light emitting deviceTOYODA GOSEI KK·Filed 2002·Granted Feb 13, 2007·52 cites·11 claims
- 0890US7038246B2Light emitting apparatusTOYODA GOSEI KK·Filed 2003·Granted May 2, 2006·57 cites·16 claims
- 0990US6649941B2Method for manufacturing semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 2001·Granted Nov 18, 2003·48 cites·11 claims
- 1089US7109529B2Light-emitting semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 2004·Granted Sep 19, 2006·67 cites·9 claims
- 1189US6936859B1Light-emitting semiconductor device using group III nitride compoundTOYODA GOSEI KK·Filed 2000·Granted Aug 30, 2005·70 cites·17 claims
- 1288US6008539AElectrodes for p-type group III nitride compound semiconductorsTOYODA GOSEI KK·Filed 1996·Granted Dec 28, 1999·76 cites·14 claims
- 1387US6777805B2Group-III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2001·Granted Aug 17, 2004·42 cites·12 claims
- 1487US6500689B2Process for producing GaN related compound semiconductorTOYODA GOSEI KK·Filed 2001·Granted Dec 31, 2002·46 cites·7 claims
- 1585US8471288B2Group III nitride semiconductor light-emitting device including an auxiliary electrode in contact with a back surface of an n-type layerUEMURA TOSHIYA·Filed 2010·Granted Jun 25, 2013·5 cites·18 claims
- 1685US7157294B2Group III nitride compound semiconductor light-emitting elementTOYODA GOSEI KK·Filed 2002·Granted Jan 2, 2007·45 cites·28 claims
- 1785US6956245B2Group III nitride compound semiconductor light-emitting elementTOYODA GOSEI KK·Filed 2003·Granted Oct 18, 2005·42 cites·22 claims
- 1885US6831305B2Semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2002·Granted Dec 14, 2004·40 cites·12 claims
- 1984US6727518B2Light emitting device using group III nitride compound semiconductorTOYODA GOSEI KK·Filed 2001·Granted Apr 27, 2004·43 cites·11 claims
- 2083US7005684B2Group III nitride based semiconductor luminescent elementTOYODA GOSEI KK·Filed 2002·Granted Feb 28, 2006·35 cites·21 claims
- 2182US9368687B2Group-III nitride semiconductor light-emitting element and manufacturing method thereforTOYODA GOSEI KK·Filed 2014·Granted Jun 14, 2016·3 cites·17 claims
- 2282US7078252B2Method of making group III nitride compound semiconductor light emitting elementTOYODA GOSEI KK·Filed 2005·Granted Jul 18, 2006·9 cites·2 claims
- 2380US6806571B2III nitride compound semiconductor element an electrode forming methodTOYODA GOSEI KK·Filed 2001·Granted Oct 19, 2004·20 cites·2 claims
- 2479US6955936B2Methods and devices related to electrode pads for p-type Group III nitride compound semiconductorsTOYODA GOSEI KK·Filed 2003·Granted Oct 18, 2005·24 cites·19 claims
- 2579US6570186B1Light emitting device using group III nitride compound semiconductorTOYODA GOSEI KK·Filed 2000·Granted May 27, 2003·30 cites·5 claims
- 2678US6917059B2III group nitride system compound semiconductor light emitting elementTOYODA GOSEI KK·Filed 2003·Granted Jul 12, 2005·21 cites·4 claims
- 2778US6521999B1Transparent electrode film and group III nitride semiconductor deviceTOYODA GOSEI KK·Filed 2000·Granted Feb 18, 2003·26 cites·11 claims
- 2876US7018915B2Group III nitride compound semiconductor device and method for forming an electrodeTOYODA GOSEI KK·Filed 2004·Granted Mar 28, 2006·15 cites·7 claims
- 2976US6335212B1Method of fabricating a semiconductor light-emitting elementTOYODA GOSEI KK·Filed 2000·Granted Jan 1, 2002·20 cites·12 claims
- 3076US6121127AMethods and devices related to electrodes for p-type group III nitride compound semiconductorsTOYODA GOSEI KK·Filed 1999·Granted Sep 19, 2000·38 cites·16 claims
- 3175US7138662B2Light-emitting deviceTOYODA GOSEI KK·Filed 2003·Granted Nov 21, 2006·21 cites·27 claims
- 3275US7015515B2Group III nitride compound semiconductor device having a superlattice structureTOYODA GOSEI KK·Filed 2002·Granted Mar 21, 2006·18 cites·22 claims
- 3375US6878971B2Light-emitting apparatusTOYODA GOSEI KK·Filed 2001·Granted Apr 12, 2005·19 cites·20 claims
- 3475US5803131AFuel filler pipeTOYODA GOSEI KK·Filed 1995·Granted Sep 8, 1998·39 cites·18 claims
- 3575US5073011AElectrochromic device with a reference electrochromic elementTOYODA GOSEI KK·Filed 1990·Granted Dec 17, 1991·44 cites·9 claims
- 3674US7023020B2Group III nitride compound semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 2001·Granted Apr 4, 2006·23 cites·14 claims
- 3774US6960485B2Light-emitting device using a group III nitride compound semiconductor and a method of manufactureTOYODA GOSEI KK·Filed 2003·Granted Nov 1, 2005·21 cites·2 claims
- 3873US7042153B2Group III nitride compound semiconductor light emitting elementTOYODA GOSEI KK·Filed 2003·Granted May 9, 2006·18 cites·20 claims
- 3972US6291840B1GaN related compound semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 1997·Granted Sep 18, 2001·38 cites·10 claims
- 4071US7989836B2Light emitting element having an irregular surface, light emitting device using the light emitting element, and method for manufacturing light emitting elementTOYODA GOSEI KK·Filed 2010·Granted Aug 2, 2011·1 cites·20 claims
- 4170US7541262B2Method for producing semiconductor deviceTOYODA GOSEI KK·Filed 2006·Granted Jun 2, 2009·4 cites·7 claims
- 4270US7071495B2III group nitride system compound semiconductor light emitting element and method of making sameTOYODA GOSEI KK·Filed 2003·Granted Jul 4, 2006·18 cites·22 claims
- 4368US7101780B2Method for manufacturing Group-III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2002·Granted Sep 5, 2006·13 cites·11 claims
- 4468US6861281B2Group III nitride compound semiconductor light-emitting device and method for producing the sameTOYODA GOSEI KK·Filed 2000·Granted Mar 1, 2005·17 cites·20 claims
- 4568US6033927AMethod for separating a substrate of a group III nitride semiconductor light-emitting deviceTOYODA GOSEI KK·Filed 1998·Granted Mar 7, 2000·42 cites·4 claims
- 4666US8138506B2Group III nitride-based compound semiconductor light-emitting deviceUEMURA TOSHIYA·Filed 2009·Granted Mar 20, 2012·3 cites·23 claims
- 4766US6835958B2Light-emitting deviceTOYODA GOSEI KK·Filed 2003·Granted Dec 28, 2004·12 cites·17 claims
- 4865US7042089B2Group III nitride compound semiconductor deviceTOYODA GOSEI KK·Filed 2004·Granted May 9, 2006·10 cites·16 claims
- 4963US8324083B2Method for producing group III nitride compound semiconductor elementUEMURA TOSHIYA·Filed 2009·Granted Dec 4, 2012·3 cites·18 claims
- 5062US7687817B2Group III nitride compound semiconductor light emitting element, light emitting device using the light emitting element: and method for manufacturing the light emitting elementTOYODA GOSEI KK·Filed 2007·Granted Mar 30, 2010·1 cites·8 claims
Showing the top 50 of 81 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →