Inventor · disambiguated record
Wen-Pin Lu
Also filed as: LU WEN-PIN
25 granted patents·8 pending applications·403 citations·filing 1999–2020
95Inventor score
Files withMACRONIX INT CO LTD22HON HAI PREC IND CO LTD2LO CHUN-YUAN2ADVANCED WIRELESS SEMICONDUCTOR COMPANY1ETERNITY TRADING CO LTD1
Top patents by PatentIndex Score
33 records- 0198US9589982B1Structure and method of operation for improved gate capacity for 3D NOR flash memoryMACRONIX INT CO LTD·Filed 2015·Granted Mar 7, 2017·215 cites·9 claims
- 0289US6496417B1Method and integrated circuit for bit line soft programming (BLISP)MACRONIX INT CO LTD·Filed 1999·Granted Dec 17, 2002·83 cites·16 claims
- 0383US7116606B2Method and circuit of plasma damage protectionMACRONIX INT CO LTD·Filed 2005·Granted Oct 3, 2006·10 cites·19 claims
- 0480US9437612B1Three-dimensional memoryMACRONIX INT CO LTD·Filed 2015·Granted Sep 6, 2016·3 cites·10 claims
- 0574US7399674B2Method of fabricating NAND-type flash EEPROM without field oxide isolationMACRONIX INT CO LTD·Filed 2004·Granted Jul 15, 2008·12 cites·9 claims
- 0673US6610127B2Facility for improving environmental atmosphere of interior spaceFiled 2001·Granted Aug 26, 2003·24 cites·10 claims
- 0768US9383990B2Server and method for allocating client device to update firmwareHON HAI PREC IND CO LTD·Filed 2014·Granted Jul 5, 2016·4 cites·4 claims
- 0865US9524784B1Device and method for improved threshold voltage distribution for non-volatile memoryMACRONIX INT CO LTD·Filed 2015·Granted Dec 20, 2016·2 cites·17 claims
- 0965US6812149B1Method of forming junction isolation to isolate active elementsMACRONIX INT CO LTD·Filed 2003·Granted Nov 2, 2004·13 cites·18 claims
- 1063US7596028B2Variable program and program verification methods for a virtual ground memory in easing buried drain contactsMACRONIX INT CO LTD·Filed 2006·Granted Sep 29, 2009·6 cites·20 claims
- 1159US7214983B2Non-volatile memory and fabricating method thereofMACRONIX INT CO LTD·Filed 2004·Granted May 8, 2007·8 cites·6 claims
- 1259US7012004B2Method of manufacturing a nonvolatile memory cell with triple spacers and the structure thereofMACRONIX INT CO LTD·Filed 2005·Granted Mar 14, 2006·3 cites·10 claims
- 1356US8466508B2Non-volatile memory structure including stress material between stacked patternsKU SHAW-HUNG·Filed 2007·Granted Jun 18, 2013·1 cites·18 claims
- 1455US7924591B2Memory device with shielding plugs adjacent to a dummy word line thereofMACRONIX INT CO LTD·Filed 2009·Granted Apr 12, 2011·2 cites·17 claims
- 1555US7847336B2Method of fabricating NAND-type flash EEPROMS without field oxide isolationMACRONIX INT CO LTD·Filed 2008·Granted Dec 7, 2010·0 cites·16 claims
- 1653US7100583B2Filter screen and the apparatus for aiding vehicle fuel combustion and purifying exhausting gas using said filter screenETERNITY TRADING CO LTD·Filed 2004·Granted Sep 5, 2006·7 cites·3 claims
- 1753US6521518B1Method of eliminating weakness caused by high density plasma dielectric layerMACRONIX INT CO LTD·Filed 2001·Granted Feb 18, 2003·4 cites·20 claims
- 1849US6413840B1Method of gettering layer for improving chemical-mechanical polishing process in flash memory production and semiconductor structure thereofMACRONIX INT CO LTD·Filed 2001·Granted Jul 2, 2002·3 cites·18 claims
- 1947US7776690B2Method of forming a contact on a semiconductor deviceMACRONIX INT CO LTD·Filed 2007·Granted Aug 17, 2010·0 cites·13 claims
- 2045US2007297445A1Protocol translating device and methodHON HAI PREC IND CO LTD·Filed 2007·Application pending·0 cites
- 2144US8451641B2Memory array no common source region and method of fabricating the sameLO CHUN-YUAN·Filed 2012·Granted May 28, 2013·0 cites·12 claims
- 2244US2021104477A1Pad structureMACRONIX INT CO LTD·Filed 2019·Application pending·0 cites
- 2343US7157360B2Memory device and method for forming a passivation layer thereonMACRONIX INT CO LTD·Filed 2003·Granted Jan 2, 2007·2 cites·11 claims
- 2442US8243489B2Memory device no common source region and method of fabricating the sameLO CHUN-YUAN·Filed 2011·Granted Aug 14, 2012·0 cites·8 claims
- 2541US8466064B2Semiconductor integrated circuit device and method of manufacturing a semiconductor integrated circuit deviceHUANG YU-FONG·Filed 2010·Granted Jun 18, 2013·0 cites·18 claims
- 2641US6867466B2Memory device and method for forming a passivation layer thereonMACRONIX INT CO LTD·Filed 2002·Granted Mar 15, 2005·1 cites·11 claims
- 2738US2005130329A1Method for the prediction of the source of semiconductor part deviationsFiled 2003·Application pending·0 cites
- 2836US6680256B2Process for planarization of flash memory cellMACRONIX INT CO LTD·Filed 2001·Granted Jan 20, 2004·0 cites·11 claims
- 2934US2016336339A1Device and method for determining electrical characteristics for ellipse gate-all-around flash memoryMACRONIX INT CO LTD·Filed 2015·Application pending·0 cites
- 3032US2017098478A1Method and apparatus for improving yield for non-volatile memoryMACRONIX INT CO LTD·Filed 2015·Application pending·0 cites
- 3132US2002119618A1Method for forming contacts of memory devices using an etch stop layerMACRONIX INT CO LTD·Filed 2001·Application pending·0 cites
- 3231US2003181053A1Method of manufacturing a nonvolatile memory cell with triple spacers and the structure thereofFiled 2003·Application pending·0 cites
- 3329US2021272877A1Semiconductor device including heterojunction bipolar transistorADVANCED WIRELESS SEMICONDUCTOR COMPANY·Filed 2020·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →