Inventor · disambiguated record
Kevin J. Linthicum
Also filed as: LINTHICUM KEVIN J · LINTHICUM KEVIN JAMES
52 granted patents·21 pending applications·4,150 citations·filing 1998–2023
99Inventor score
Files withUNIV NORTH CAROLINA STATE21NITRONEX CORP16MACOM TECH SOLUTIONS HOLDINGS INC10M/A-COM TECH SOLUTIONS HOLDINGS INC8INT RECTIFIER CORP7
Top patents by PatentIndex Score
73 records- 0199US6649287B2Gallium nitride materials and methodsNITRONEX CORP·Filed 2000·Granted Nov 18, 2003·248 cites·70 claims
- 0299US6617060B2Gallium nitride materials and methodsNITRONEX CORP·Filed 2002·Granted Sep 9, 2003·317 cites·75 claims
- 0398US9064775B2Gallium nitride semiconductor structures with compositionally-graded transition layerINT RECTIFIER CORP·Filed 2014·Granted Jun 23, 2015·29 cites·20 claims
- 0498US6521514B1Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substratesUNIV NORTH CAROLINA STATE·Filed 1999·Granted Feb 18, 2003·239 cites·35 claims
- 0598US6261929B1Methods of forming a plurality of semiconductor layers using spaced trench arraysUNIV NORTH CAROLINA STATE·Filed 2000·Granted Jul 17, 2001·304 cites·36 claims
- 0698US6177688B1Pendeoepitaxial gallium nitride semiconductor layers on silcon carbide substratesUNIV NORTH CAROLINA STATE·Filed 1998·Granted Jan 23, 2001·652 cites·22 claims
- 0797US8592862B2Gallium nitride semiconductor structures with compositionally-graded transition layerINT RECTIFIER CORP·Filed 2012·Granted Nov 26, 2013·18 cites·20 claims
- 0897US8344417B2Gallium nitride semiconductor structures with compositionally-graded transition layerINT RECTIFIER CORP·Filed 2012·Granted Jan 1, 2013·16 cites·20 claims
- 0997US7365374B2Gallium nitride material structures including substrates and methods associated with the sameNITRONEX CORP·Filed 2005·Granted Apr 29, 2008·52 cites·19 claims
- 1097US7361946B2Semiconductor device-based sensorsNITRONEX CORP·Filed 2004·Granted Apr 22, 2008·116 cites·15 claims
- 1197US7233028B2Gallium nitride material devices and methods of forming the sameNITRONEX CORP·Filed 2003·Granted Jun 19, 2007·103 cites·47 claims
- 1297US6611002B2Gallium nitride material devices and methods including backside viasNITRONEX CORP·Filed 2001·Granted Aug 26, 2003·176 cites·51 claims
- 1397US6265289B1Methods of fabricating gallium nitride semiconductor layers by lateral growth from sidewalls into trenches, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 1999·Granted Jul 24, 2001·217 cites·80 claims
- 1497US6255198B1Methods of fabricating gallium nitride microelectronic layers on silicon layers and gallium nitride microelectronic structures formed therebyUNIV NORTH CAROLINA STATE·Filed 1999·Granted Jul 3, 2001·275 cites·53 claims
- 1596US8937335B2Gallium nitride devices with aluminum nitride intermediate layerINT RECTIFIER CORP·Filed 2013·Granted Jan 20, 2015·12 cites·20 claims
- 1696US8928034B2Gallium nitride devices with aluminum nitride alloy intermediate layerINT RECTIFIER CORP·Filed 2013·Granted Jan 6, 2015·11 cites·20 claims
- 1796US6686261B2Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 2003·Granted Feb 3, 2004·66 cites·33 claims
- 1896US6586778B2Gallium nitride semiconductor structures fabricated by pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak postsUNIV NORTH CAROLINA STATE·Filed 2002·Granted Jul 1, 2003·81 cites·59 claims
- 1996US6403451B1Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride postsNOERH CAROLINA STATE UNIVERSIT·Filed 2000·Granted Jun 11, 2002·209 cites·18 claims
- 2096US6380108B1Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on weak posts, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 1999·Granted Apr 30, 2002·205 cites·85 claims
- 2195US8928035B2Gallium nitride devices with gallium nitride alloy intermediate layerINT RECTIFIER CORP·Filed 2013·Granted Jan 6, 2015·9 cites·20 claims
- 2295US7195993B2Methods of fabricating gallium nitride semiconductor layers by lateral growth into trenchesUNIV NORTH CAROLINA STATE·Filed 2004·Granted Mar 27, 2007·82 cites·10 claims
- 2395US6545300B2Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substrates, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 2001·Granted Apr 8, 2003·64 cites·17 claims
- 2495US6489221B2High temperature pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on sapphire substratesUNIV NORTH CAROLINA STATE·Filed 2001·Granted Dec 3, 2002·73 cites·32 claims
- 2595US6376339B2Pendeoepitaxial methods of fabricating gallium nitride semiconductor layers on silicon carbide substrates by lateral growth from sidewalls of masked posts, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 2001·Granted Apr 23, 2002·68 cites·39 claims
- 2694US10177229B2Semiconductor material having a compositionally-graded transition layerINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2016·Granted Jan 8, 2019·5 cites·19 claims
- 2794US9437687B2III-nitride based semiconductor structureINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2015·Granted Sep 6, 2016·5 cites·20 claims
- 2894US6602764B2Methods of fabricating gallium nitride microelectronic layers on silicon layersUNIV NORTH CAROLINA STATE·Filed 2001·Granted Aug 5, 2003·68 cites·26 claims
- 2994US6486042B2Methods of forming compound semiconductor layers using spaced trench arrays and semiconductor substrates formed therebyUNIV NORTH CAROLINA STATE·Filed 2001·Granted Nov 26, 2002·71 cites·3 claims
- 3094US6462355B1Pendeoepitaxial gallium nitride semiconductor layers on silicon carbide substratesUNIV NORTH CAROLINA STATE·Filed 2000·Granted Oct 8, 2002·58 cites·5 claims
- 3193US9627473B2Parasitic channel mitigation in III-nitride material semiconductor structuresM/A-COM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Granted Apr 18, 2017·9 cites·18 claims
- 3293US8105921B2Gallium nitride materials and methodsWEEKS JR T WARREN·Filed 2008·Granted Jan 31, 2012·18 cites·15 claims
- 3393US7352016B2Gallium nitride material transistors and methods associated with the sameNITRONEX CORP·Filed 2006·Granted Apr 1, 2008·23 cites·19 claims
- 3493US6621148B2Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 2001·Granted Sep 16, 2003·45 cites·43 claims
- 3592US7791106B2Gallium nitride material structures including substrates and methods associated with the sameNITRONEX CORP·Filed 2008·Granted Sep 7, 2010·17 cites·12 claims
- 3692US7095062B2Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride posts, and gallium nitride semiconductor structures fabricated therebyUNIV NORTH CAROLINA STATE·Filed 2005·Granted Aug 22, 2006·15 cites·16 claims
- 3791US9673281B2Parasitic channel mitigation using rare-earth oxide and/or rare-earth nitride diffusion barrier regionsM/A-COM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Granted Jun 6, 2017·6 cites·16 claims
- 3891US9461119B2Semiconductor structure with compositionally-graded transition layerINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2014·Granted Oct 4, 2016·4 cites·17 claims
- 3991US9437686B2Gallium nitride devices with discontinuously graded transition layerINFINEON TECHNOLOGIES AMERICAS CORP·Filed 2014·Granted Sep 6, 2016·4 cites·17 claims
- 4091US7135720B2Gallium nitride material transistors and methods associated with the sameNITRONEX CORP·Filed 2004·Granted Nov 14, 2006·50 cites·81 claims
- 4189US9773898B2III-nitride semiconductor structures comprising spatially patterned implanted speciesM/A-COM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Granted Sep 26, 2017·5 cites·13 claims
- 4288US9806182B2Parasitic channel mitigation using elemental diboride diffusion barrier regionsMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2015·Granted Oct 31, 2017·4 cites·19 claims
- 4388US6864160B2Methods of fabricating gallium nitride semiconductor layers on substrates including non-gallium nitride postsUNIV NORTH CAROLINA STATE·Filed 2002·Granted Mar 8, 2005·28 cites·41 claims
- 4487US6897483B2Second gallium nitride layers that extend into trenches in first gallium nitride layersUNIV NORTH CAROLINA STATE·Filed 2003·Granted May 24, 2005·27 cites·6 claims
- 4586US12453151B2Parasitic channel mitigation in semiconductor structuresMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2023·Granted Oct 21, 2025·0 cites·20 claims
- 4686US11264465B2Parasitic channel mitigation using silicon carbide diffusion barrier regionsMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2019·Granted Mar 1, 2022·2 cites·28 claims
- 4783US6956250B2Gallium nitride materials including thermally conductive regionsNITRONEX CORP·Filed 2001·Granted Oct 18, 2005·30 cites·74 claims
- 4878US11810955B2Parasitic channel mitigation using silicon carbide diffusion barrier regionsMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2022·Granted Nov 7, 2023·0 cites·20 claims
- 4971US7569871B2Gallium nitride material transistors and methods associated with the sameNITRONEX CORP·Filed 2008·Granted Aug 4, 2009·3 cites·20 claims
- 5071US2020243651A9Gallium nitride materials and methodsMACOM TECH SOLUTIONS HOLDINGS INC·Filed 2018·Application pending·0 cites
Showing the top 50 of 73 patent records by PatentIndex Score.
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