Inventor · disambiguated record
Naruhito Iwasa
Also filed as: IWASA NARUHITO
27 granted patents·8 pending applications·3,336 citations·filing 1992–2024
98Inventor score
Top patents by PatentIndex Score
35 records- 0199US5578839ALight-emitting gallium nitride-based compound semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 1993·Granted Nov 26, 1996·429 cites·39 claims
- 0298US6153010AMethod of growing nitride semiconductors, nitride semiconductor substrate and nitride semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 1998·Granted Nov 28, 2000·872 cites·30 claims
- 0398US5959307ANitride semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 1996·Granted Sep 28, 1999·319 cites·38 claims
- 0498US5777350ANitride semiconductor light-emitting deviceNICHIA KAGAKU KOGYO KK·Filed 1995·Granted Jul 7, 1998·474 cites·21 claims
- 0598US5747832ALight-emitting gallium nitride-based compound semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 1996·Granted May 5, 1998·173 cites·9 claims
- 0698US5306662AMethod of manufacturing P-type compound semiconductorNICHIA KAGAKU KOGYO KK·Filed 1992·Granted Apr 26, 1994·304 cites·8 claims
- 0797US5734182ALight-emitting gallium nitride-based compound semiconducor deviceNICHIA KAGAKU KOGYO KK·Filed 1996·Granted Mar 31, 1998·115 cites·9 claims
- 0896US7442254B2Nitride semiconductor device having a nitride semiconductor substrate and an indium containing active layerNICHIA CORP·Filed 2006·Granted Oct 28, 2008·26 cites·18 claims
- 0996US6791103B2Light-emitting gallium nitride-based compound semiconductor deviceNICHIA CORP·Filed 2002·Granted Sep 14, 2004·45 cites·9 claims
- 1096US6756611B2Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 2002·Granted Jun 29, 2004·87 cites·11 claims
- 1194US6215133B1Light-emitting gallium nitride-based compound semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 1999·Granted Apr 10, 2001·73 cites·13 claims
- 1294US5880486ALight-emitting gallium nitride-based compound semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 1996·Granted Mar 9, 1999·80 cites·8 claims
- 1394US5468678AMethod of manufacturing P-type compound semiconductorNICHIA KAGAKU KOGYO KK·Filed 1994·Granted Nov 21, 1995·132 cites·8 claims
- 1490US7154128B2Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 2005·Granted Dec 26, 2006·10 cites·21 claims
- 1589USRE42770ENitride semiconductor device having a nitride semiconductor substrate and an indium containing active layerNICHIA CORP·Filed 2010·Granted Oct 4, 2011·6 cites·18 claims
- 1687US6580099B2Nitride semiconductor light-emitting devicesNICHIA KAGAKU KOGYO KK·Filed 2001·Granted Jun 17, 2003·52 cites·4 claims
- 1787US6469323B1Light-emitting gallium nitride-based compound semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 2000·Granted Oct 22, 2002·15 cites·8 claims
- 1885US6078063ALight-emitting gallium nitride-based compound semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 1998·Granted Jun 20, 2000·37 cites·4 claims
- 1984US6940103B2Nitride semiconductor growth method, nitride semiconductor substrate and nitride semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 2003·Granted Sep 6, 2005·19 cites·11 claims
- 2082US7083679B2Nitride semiconductor growth method, nitride semiconductor substrate, and nitride semiconductor deviceNICHIA CORP·Filed 2001·Granted Aug 1, 2006·17 cites·23 claims
- 2179US6900465B2Nitride semiconductor light-emitting deviceNICHIA CORP·Filed 2001·Granted May 31, 2005·31 cites·3 claims
- 2273US7166869B2Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductorNICHIA CORP·Filed 2004·Granted Jan 23, 2007·14 cites·9 claims
- 2370US2025084286A1Electroconductive adhesiveOSAKA SODA CO LTD·Filed 2024·Application pending·0 cites
- 2460US7166874B2Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductorNICHIA CORP·Filed 2003·Granted Jan 23, 2007·6 cites·15 claims
- 2556US10604600B2Photocurable resin composition and cured product of sameOSAKA SODA CO LTD·Filed 2017·Granted Mar 31, 2020·0 cites·6 claims
- 2654US11697592B2Method for producing carbon nanotubesOSAKA SODA CO LTD·Filed 2019·Granted Jul 11, 2023·0 cites·10 claims
- 2753US8304790B2Nitride semiconductor with active layer of quantum well structure with indium-containing nitride semiconductorNAKAMURA SHUJI·Filed 2006·Granted Nov 6, 2012·0 cites·6 claims
- 2853US2020407579A1Active energy ray-curable inkjet ink compositionOSAKA SODA CO LTD·Filed 2019·Application pending·0 cites
- 2945US12257631B2Silver nanoparticlesOSAKA SODA CO LTD·Filed 2019·Granted Mar 25, 2025·0 cites·9 claims
- 3044US2020172767A1Electroconductive adhesiveOSAKA SODA CO LTD·Filed 2017·Application pending·0 cites
- 3144US2003216011A1Light-emitting gallium nitride-based compound semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 2003·Application pending·0 cites
- 3242US2022288678A1Silver particlesOSAKA SODA CO LTD·Filed 2020·Application pending·0 cites
- 3342US2003015724A1Nitride semiconductor deviceNICHIA KAGAKU KOGYO KK·Filed 2002·Application pending·0 cites
- 3441US2011313127A1Method for producing polylactic acidIWASA NARUHITO·Filed 2010·Application pending·0 cites
- 3539US2018186064A1Composition for liningOSAKA SODA CO LTD·Filed 2016·Application pending·0 cites
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