Inventor · disambiguated record
Erdmann F. Schubert
Also filed as: SCHUBERT ERDMANN · SCHUBERT ERDMANN F · SCHUBERT ERDMANN FREDERICK
28 granted patents·1,728 citations·filing 1985–1995
98Inventor score
Files withAT & T BELL LAB16MAX PLANCK GESELLSCHAFT5AMERICAN TELEPHONE & TELEGRAPH4LUCENT TECHNOLOGIES INC2AT & T CORP1
Top patents by PatentIndex Score
28 records- 0196US5226053ALight emitting diodeAT & T BELL LAB·Filed 1991·Granted Jul 6, 1993·266 cites·22 claims
- 0296US4882609ASemiconductor devices with at least one monoatomic layer of doping atomsMAX PLANCK GESELLSCHAFT·Filed 1985·Granted Nov 21, 1989·180 cites·4 claims
- 0395US5115441AVertical cavity surface emmitting lasers with transparent electrodesAT & T BELL LAB·Filed 1991·Granted May 19, 1992·117 cites·19 claims
- 0494US5373186ABipolar transistor with monoatomic base layer between emitter and collector layersMAX PLANCK GESELLSCHAFT·Filed 1994·Granted Dec 13, 1994·111 cites·1 claims
- 0594US4780748AField-effect transistor having a delta-doped ohmic contactAMERICAN TELEPHONE & TELEGRAPH·Filed 1986·Granted Oct 25, 1988·140 cites·4 claims
- 0693US5315128APhotodetector with a resonant cavityAT & T BELL LAB·Filed 1993·Granted May 24, 1994·131 cites·8 claims
- 0792US5363398AAbsorption resonant rare earth-doped micro-cavitiesAT & T BELL LAB·Filed 1993·Granted Nov 8, 1994·86 cites·14 claims
- 0892US5068868AVertical cavity surface emitting lasers with electrically conducting mirrorsAT & T BELL LAB·Filed 1990·Granted Nov 26, 1991·83 cites·20 claims
- 0990US5249195AErbium doped optical devicesAT & T BELL LAB·Filed 1992·Granted Sep 28, 1993·76 cites·28 claims
- 1089US5170407AElimination of heterojunction band discontinuitiesAT & T BELL LAB·Filed 1991·Granted Dec 8, 1992·69 cites·12 claims
- 1187US5362977ASingle mirror light-emitting diodes with enhanced intensityAT & T BELL LAB·Filed 1992·Granted Nov 8, 1994·76 cites·16 claims
- 1287US5018157AVertical cavity semiconductor lasersAT & T BELL LAB·Filed 1990·Granted May 21, 1991·60 cites·18 claims
- 1385US5206871AOptical devices with electron-beam evaporated multilayer mirrorAT & T BELL LAB·Filed 1991·Granted Apr 27, 1993·54 cites·9 claims
- 1479US5550089AGallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source.LUCENT TECHNOLOGIES INC·Filed 1994·Granted Aug 27, 1996·39 cites·16 claims
- 1575US4980892AOptical system including wavelength-tunable semiconductor laserAT & T BELL LAB·Filed 1989·Granted Dec 25, 1990·22 cites·5 claims
- 1670US5451548AElectron beam deposition of gallium oxide thin films using a single high purity crystal sourceAT & T CORP·Filed 1994·Granted Sep 19, 1995·46 cites·17 claims
- 1765US4772934ADelta-doped ohmic metal to semiconductor contactsAMERICAN TELEPHONE & TELEGRAPH·Filed 1986·Granted Sep 20, 1988·30 cites·6 claims
- 1864US5268582AP-N junction devices with group IV element-doped group III-V compound semiconductorsAT & T BELL LAB·Filed 1992·Granted Dec 7, 1993·36 cites·27 claims
- 1961US5060234AInjection laser with at least one pair of monoatomic layers of doping atomsMAX PLANCK GESELLSCHAFT·Filed 1991·Granted Oct 22, 1991·17 cites·3 claims
- 2056US4974044ADevices having asymmetric delta-dopingAT & T BELL LAB·Filed 1989·Granted Nov 27, 1990·10 cites·18 claims
- 2155US5329150ASemiconductor photodetector devices with pairs of monoatomic layers separated by intrinsic layersMAX PLANCK GESELLSCHAFT·Filed 1993·Granted Jul 12, 1994·13 cites·2 claims
- 2249US5031012ADevices having asymmetric delta-dopingAT & T BELL LAB·Filed 1990·Granted Jul 9, 1991·12 cites·5 claims
- 2346US4929064AOptical communications modulator deviceAMERICAN TELEPHONE & TELEGRAPH·Filed 1988·Granted May 29, 1990·9 cites·10 claims
- 2444US5719077AFixture and method for laser fabrication by in-situ cleaving of semiconductor barsLUCENT TECHNOLOGIES INC·Filed 1995·Granted Feb 17, 1998·13 cites·24 claims
- 2541US5216260AOptically bistable semiconductor device with pairs of monoatomic layers separated by intrinsic layersMAX PLANCK GESELLSCHAFT·Filed 1991·Granted Jun 1, 1993·8 cites·2 claims
- 2640US5226055ADevices having repetitive layersAT & T BELL LAB·Filed 1991·Granted Jul 6, 1993·8 cites·7 claims
- 2737US4784967AMethod for fabricating a field-effect transistor with a self-aligned gateAMERICAN TELEPHONE & TELEGRAPH·Filed 1986·Granted Nov 15, 1988·8 cites·3 claims
- 2833US5024967ADoping procedures for semiconductor devicesAT & T BELL LAB·Filed 1989·Granted Jun 18, 1991·8 cites·17 claims
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