Inventor · disambiguated record
Kanetake Takasaki
Also filed as: TAKASAKI KANETAKE
20 granted patents·668 citations·filing 1980–2003
96Inventor score
Files withFUJITSU LTD20
Top patents by PatentIndex Score
20 records- 0197US4539068AVapor phase growth methodFUJITSU LTD·Filed 1982·Granted Sep 3, 1985·147 cites·3 claims
- 0290US4394401AMethod of plasma enhanced chemical vapor deposition of phosphosilicate glass filmFUJITSU LTD·Filed 1981·Granted Jul 19, 1983·77 cites·10 claims
- 0384US4581622AUV erasable EPROM with UV transparent silicon oxynitride coatingFUJITSU LTD·Filed 1984·Granted Apr 8, 1986·50 cites·8 claims
- 0480US4532022AProcess of producing a semiconductor deviceFUJITSU LTD·Filed 1983·Granted Jul 30, 1985·41 cites·10 claims
- 0576US5424243AMethod of making a compound semiconductor crystal-on-substrate structureFUJITSU LTD·Filed 1994·Granted Jun 13, 1995·58 cites·10 claims
- 0676US4384933AMethod of reactive sputteringFUJITSU LTD·Filed 1981·Granted May 24, 1983·28 cites·7 claims
- 0771US5312783AProcess for the preparation of a high dielectric thin film using ECR plasma CVDFUJITSU LTD·Filed 1992·Granted May 17, 1994·48 cites·3 claims
- 0871US4363868AProcess of producing semiconductor devices by forming a silicon oxynitride layer by a plasma CVD technique which is employed in a selective oxidation processFUJITSU LTD·Filed 1980·Granted Dec 14, 1982·32 cites·4 claims
- 0966US4929985ACompound semiconductor deviceFUJITSU LTD·Filed 1989·Granted May 29, 1990·21 cites·5 claims
- 1063US6984267B2Manufacture system for semiconductor device with thin gate insulating filmFUJITSU LTD·Filed 2002·Granted Jan 10, 2006·8 cites·6 claims
- 1162US5107317ASemiconductor device with first and second buffer layersFUJITSU LTD·Filed 1990·Granted Apr 21, 1992·33 cites·12 claims
- 1261US5210052AMethod for fabricating a semiconductor substrateFUJITSU LTD·Filed 1992·Granted May 11, 1993·33 cites·9 claims
- 1359US6468926B1Manufacture method and system for semiconductor device with thin gate insulating film of oxynitrideFUJITSU LTD·Filed 1999·Granted Oct 22, 2002·22 cites·23 claims
- 1455US6780699B2Semiconductor device and method for fabricating the sameFUJITSU LTD·Filed 2003·Granted Aug 24, 2004·5 cites·20 claims
- 1549US5019529AHeteroepitaxial growth methodFUJITSU LTD·Filed 1989·Granted May 28, 1991·16 cites·8 claims
- 1647US4406053AProcess for manufacturing a semiconductor device having a non-porous passivation layerFUJITSU LTD·Filed 1981·Granted Sep 27, 1983·13 cites·9 claims
- 1744US4781945AProcess for the formation of phosphosilicate glass coatingFUJITSU LTD·Filed 1987·Granted Nov 1, 1988·14 cites·12 claims
- 1840US5057880ASemiconductor device having a heteroepitaxial substrateFUJITSU LTD·Filed 1990·Granted Oct 15, 1991·12 cites·12 claims
- 1935US4741919AProcess for preparation of semiconductor deviceFUJITSU LTD·Filed 1987·Granted May 3, 1988·6 cites·9 claims
- 2032US5183778AMethod of producing a semiconductor deviceFUJITSU LTD·Filed 1991·Granted Feb 2, 1993·4 cites·5 claims
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