Inventor · disambiguated record
Kaori Misawa
Also filed as: MISAWA KAORI
14 granted patents·14 pending applications·290 citations·filing 1997–2017
93Inventor score
Files withSANYO ELECTRIC CO20SEMICONDUCTOR LEADING EDGE TEC3RENESAS TECH CORP2PANASONIC IP MAN CO LTD1SONY CORP1
Top patents by PatentIndex Score
28 records- 0194US7952121B2Image sensor and sensor unitSANYO ELECTRIC CO·Filed 2008·Granted May 31, 2011·51 cites·14 claims
- 0294US7538038B2Method of removing resist, semiconductor device thereby and method of manufacturing a semiconductor deviceSONY CORP·Filed 2005·Granted May 26, 2009·32 cites·18 claims
- 0387US6150725ASemiconductor devices with means to reduce contaminationSANYO ELECTRIC CO·Filed 1998·Granted Nov 21, 2000·99 cites·5 claims
- 0475US7923727B2Image sensor including a photoelectric conversion filmSANYO ELECTRIC CO·Filed 2007·Granted Apr 12, 2011·3 cites·18 claims
- 0567US6998325B2Method for manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2004·Granted Feb 14, 2006·11 cites·10 claims
- 0666US7064060B2Method for manufacturing semiconductor deviceSANYO ELECTRIC CO·Filed 2004·Granted Jun 20, 2006·10 cites·4 claims
- 0763US6326318B1Process for producing semiconductor devices including an insulating layer with an impuritySANYO ELECTRIC CO·Filed 2000·Granted Dec 4, 2001·9 cites·7 claims
- 0860US6214749B1Process for producing semiconductor devicesSANYO ELECTRIC CO·Filed 1997·Granted Apr 10, 2001·25 cites·14 claims
- 0959US7205030B2Method for forming porous filmSANYO ELECTRIC CO·Filed 2004·Granted Apr 17, 2007·6 cites·12 claims
- 1057US6268657B1Semiconductor devices and an insulating layer with an impuritySANYO ELECTRIC CO·Filed 1997·Granted Jul 31, 2001·19 cites·18 claims
- 1155US6177343B1Process for producing semiconductor devices including an insulating layer with an impuritySANYO ELECTRIC CO·Filed 1999·Granted Jan 23, 2001·18 cites·7 claims
- 1253US2009315086A1Image sensor and cmos image sensorSANYO ELECTRIC CO·Filed 2009·Application pending·0 cites
- 1351US2009134437A1Image sensor and cmos image sensorSANYO ELECTRIC CO·Filed 2008·Application pending·0 cites
- 1451US2009134438A1Image SensorSANYO ELECTRIC CO·Filed 2008·Application pending·0 cites
- 1551US2009144354A1Imaging deviceSANYO ELECTRIC CO·Filed 2008·Application pending·0 cites
- 1650US6388303B1Semiconductor device and semiconductor device manufacture methodSANYO ELECTRIC CO·Filed 2000·Granted May 14, 2002·4 cites·2 claims
- 1750US2010013975A1Image sensorSANYO ELECTRIC CO·Filed 2009·Application pending·0 cites
- 1850US2008266431A1SensorSANYO ELECTRIC CO·Filed 2008·Application pending·0 cites
- 1950US2009316032A1Image sensor and method of manufacturing image sensorSANYO ELECTRIC CO·Filed 2009·Application pending·0 cites
- 2049US7125794B2Method of manufacturing semiconductor deviceRENESAS TECH CORP·Filed 2004·Granted Oct 24, 2006·3 cites·9 claims
- 2147US2006199371A1Semiconductor devices passivation filmSANYO ELECTRIC CO·Filed 2006·Application pending·0 cites
- 2245US10388813B2Solar cell modulePANASONIC IP MAN CO LTD·Filed 2017·Granted Aug 20, 2019·0 cites·5 claims
- 2342US2009057734A1Image sensorSANYO ELECTRIC CO·Filed 2008·Application pending·0 cites
- 2440US2005170102A1Method for manufacturing semiconductor deviceSEMICONDUCTOR LEADING EDGE TEC·Filed 2005·Application pending·0 cites
- 2540US2005199586A1Resist removal method and semiconductor device manufactured by using the sameSEMICONDUCTOR LEADING EDGE TEC·Filed 2005·Application pending·0 cites
- 2639US2005170641A1Multilayered wiring structure, method of forming buried wiring, semiconductor device, method of manufacturing semiconductor device, semiconductor mounted device, and method of manufacturing semiconductor mounted deviceSEMICONDUCTOR LEADING EDGE TEC·Filed 2004·Application pending·0 cites
- 2738US2010194960A1Charge increaserSANYO ELECTRIC CO·Filed 2010·Application pending·0 cites
- 2827US2001048147A1Semiconductor devices passivation filmFiled 1998·Application pending·0 cites
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