Inventor · disambiguated record
Sung-Dae Suk
Also filed as: SUK SUNG-DAE
60 granted patents·11 pending applications·363 citations·filing 2005–2024
98Inventor score
Top patents by PatentIndex Score
71 records- 0198US9425259B1Semiconductor device having a finSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 23, 2016·21 cites·11 claims
- 0297US9601569B1Semiconductor device having a gate all around structureSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Mar 21, 2017·23 cites·20 claims
- 0397US9412849B1Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Aug 9, 2016·25 cites·19 claims
- 0495US9825183B2Semiconductor device including gate electrode extending between nanosheetsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 21, 2017·10 cites·19 claims
- 0595US9123774B2Semiconductor devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 1, 2015·24 cites·12 claims
- 0695US7803675B2Gate-all-around type semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Sep 28, 2010·33 cites·12 claims
- 0795US7588977B2Method of fabricating a MOS field effect transistor having plurality of channelsSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 15, 2009·25 cites·15 claims
- 0894US8395218B2Gate-all-around type semiconductor device and method of manufacturing the sameSUK SUNG-DAE·Filed 2010·Granted Mar 12, 2013·20 cites·16 claims
- 0993US9929160B1Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 27, 2018·17 cites·20 claims
- 1093US9871103B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jan 16, 2018·10 cites·19 claims
- 1193US9276087B2Methods of manufacturing FINFET semiconductor devices using sacrificial gate patterns and selective oxidization of a finSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Mar 1, 2016·14 cites·6 claims
- 1293US7271456B2Semiconductor devices including stress inducing layersSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 18, 2007·19 cites·38 claims
- 1392US9012281B2Semiconductor device fabrication methodsSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 21, 2015·14 cites·4 claims
- 1491US11282838B2Stacked gate structuresIBM·Filed 2020·Granted Mar 22, 2022·2 cites·16 claims
- 1591US10186579B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jan 22, 2019·8 cites·20 claims
- 1690US9679965B1Semiconductor device having a gate all around structure and a method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 13, 2017·11 cites·11 claims
- 1789US11177367B2Self-aligned bottom spacer EPI last flow for VTFETIBM·Filed 2020·Granted Nov 16, 2021·2 cites·17 claims
- 1888US10734273B2Semiconductor device including isolation layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 4, 2020·5 cites·15 claims
- 1988US9613871B2Semiconductor device and fabricating method thereofSUK SUNG-DAE·Filed 2015·Granted Apr 4, 2017·5 cites·23 claims
- 2087US8124961B2Single electron transistorSUK SUNG-DAE·Filed 2011·Granted Feb 28, 2012·10 cites·9 claims
- 2185US9362311B1Method of fabricating semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 7, 2016·4 cites·20 claims
- 2284US10304964B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 28, 2019·6 cites·20 claims
- 2384US9653462B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 16, 2017·5 cites·20 claims
- 2484US7795687B2MOS field effect transistor having plurality of channelsSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Sep 14, 2010·7 cites·7 claims
- 2584US7781290B2Complementary metal-oxide semiconductor (CMOS) devices including a thin-body channel and dual gate dielectric layers and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 24, 2010·9 cites·29 claims
- 2682US12255257B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Mar 18, 2025·0 cites·17 claims
- 2782US10818802B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 27, 2020·2 cites·13 claims
- 2882US7859064B1Semiconductor devices including channel and junction regions of different semiconductor materialsSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Dec 28, 2010·6 cites·13 claims
- 2981US9985141B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 29, 2018·2 cites·15 claims
- 3080US11101166B2Semiconductor device including isolation layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 24, 2021·1 cites·19 claims
- 3178US10109631B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Oct 23, 2018·2 cites·20 claims
- 3277US9923058B2Semiconductor device having a finSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Mar 20, 2018·2 cites·11 claims
- 3376US12148833B2Three-dimensional, monolithically stacked field effect transistors formed on the front and backside of a waferIBM·Filed 2023·Granted Nov 19, 2024·0 cites·11 claims
- 3476US10204983B2Semiconductor device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 12, 2019·2 cites·19 claims
- 3576US7955932B2Single electron transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jun 7, 2011·6 cites·20 claims
- 3672US11942558B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Mar 26, 2024·0 cites·20 claims
- 3772US11557504B2Semiconductor device including isolation layers and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 17, 2023·0 cites·20 claims
- 3872US7952151B2Semiconductor devices including fin shaped semiconductor regions and stress inducing layersSAMSUNG ELECTRONICS CO LTD·Filed 2010·Granted May 31, 2011·2 cites·9 claims
- 3971US11923434B2Self-aligned bottom spacer epi last flow for VTFETIBM·Filed 2021·Granted Mar 5, 2024·0 cites·20 claims
- 4071US9130040B2FinFET semiconductor device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Sep 8, 2015·3 cites·20 claims
- 4169US11695009B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jul 4, 2023·0 cites·18 claims
- 4268US9431522B2Methods of manufacturing FINFET semiconductor devices using sacrificial gate patterns and selective oxidization of a finSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 30, 2016·1 cites·16 claims
- 4368US9048120B2Integrated junction and junctionless nanotransistorsSUK SUNG-DAE·Filed 2013·Granted Jun 2, 2015·2 cites·23 claims
- 4466US8461653B2Semiconductor devices including fin shaped semiconductor regions and stress inducing layersOH CHANG-WOO·Filed 2011·Granted Jun 11, 2013·1 cites·19 claims
- 4565US11817501B2Three-dimensional, monolithically stacked field effect transistors formed on the front and backside of a waferIBM·Filed 2021·Granted Nov 14, 2023·0 cites·12 claims
- 4665US9171845B2Integrated junction and junctionless nanotransistorsSUK SUNG-DAE·Filed 2015·Granted Oct 27, 2015·1 cites·11 claims
- 4764US9806194B2FinFET with fin having different Ge doped regionSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Oct 31, 2017·1 cites·19 claims
- 4861US11251312B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 15, 2022·0 cites·13 claims
- 4958US12426314B2Strain generation and anchoring in gate-all-around field effect transistorsIBM·Filed 2021·Granted Sep 23, 2025·0 cites·20 claims
- 5058US10991694B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Apr 27, 2021·0 cites·13 claims
Showing the top 50 of 71 patent records by PatentIndex Score.
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