Inventor · disambiguated record
Frederick P. Giles
Also filed as: GILES FREDERICK P · GILES FREDERICK PERRY
8 granted patents·3 pending applications·169 citations·filing 2001–2018
89Inventor score
Top patents by PatentIndex Score
11 records- 0189US7494876B1Trench-gated MIS device having thick polysilicon insulation layer at trench bottom and method of fabricating the sameVISHAY SILICONIX·Filed 2005·Granted Feb 24, 2009·20 cites·8 claims
- 0286US6921697B2Method for making trench MIS device with reduced gate-to-drain capacitanceSILICONIX INC·Filed 2002·Granted Jul 26, 2005·31 cites·7 claims
- 0382US6882000B2Trench MIS device with reduced gate-to-drain capacitanceSILICONIX INC·Filed 2001·Granted Apr 19, 2005·24 cites·19 claims
- 0480US6903412B2Trench MIS device with graduated gate oxide layerSILICONIX INC·Filed 2002·Granted Jun 7, 2005·21 cites·8 claims
- 0577US7012005B2Self-aligned differential oxidation in trenches by ion implantationSILICONIX INC·Filed 2002·Granted Mar 14, 2006·21 cites·6 claims
- 0677US6875657B2Method of fabricating trench MIS device with graduated gate oxide layerSILICONIX INC·Filed 2002·Granted Apr 5, 2005·17 cites·14 claims
- 0777US6709930B2Thicker oxide formation at the trench bottom by selective oxide depositionSILICONIX INC·Filed 2002·Granted Mar 23, 2004·24 cites·13 claims
- 0868US6849898B2Trench MIS device with active trench corners and thick bottom oxideSILICONIX INC·Filed 2001·Granted Feb 1, 2005·11 cites·25 claims
- 0942US2015061008A1Ldmosfet having a bridge region formed between two gate electrodesMAXIM INTEGRATED PRODUCTS·Filed 2014·Application pending·0 cites
- 1042US2011115019A1Cmos compatible low gate charge lateral mosfetMAXIM INTEGRATED PRODUCTS·Filed 2009·Application pending·0 cites
- 1136US2018286860A1Cmos compatible low gate charge high voltage pmosMAXIM INTEGRATED PRODUCTS·Filed 2018·Application pending·0 cites
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