Inventor · disambiguated record
Chiaki Sasaoka
Also filed as: SASAOKA CHIAKI
19 granted patents·8 pending applications·248 citations·filing 1998–2024
92Inventor score
Files withDENSO CORP11NEC CORP9ASAHI CHEMICAL IND2NATIONAL UNIV CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM2NEC ELECTRONICS CORP1
Top patents by PatentIndex Score
27 records- 0195US6841410B2Method for forming group-III nitride semiconductor layer and group-III nitride semiconductor deviceNEC CORP·Filed 2002·Granted Jan 11, 2005·110 cites·51 claims
- 0283US6100106AFabrication of nitride semiconductor light-emitting deviceNEC CORP·Filed 1998·Granted Aug 8, 2000·88 cites·12 claims
- 0381US6284042B1Method of growing nitride crystal of group III elementNEC CORP·Filed 2000·Granted Sep 4, 2001·19 cites·10 claims
- 0481US2025015562A1Method of producing ultraviolet laser diodeASAHI CHEMICAL IND·Filed 2024·Application pending·0 cites
- 0570US12126141B2Method of producing ultraviolet laser diode, and ultraviolet laser diodeASAHI CHEMICAL IND·Filed 2021·Granted Oct 22, 2024·0 cites·9 claims
- 0663US12507453B2Semiconductor device and manufacturing method of semiconductor deviceDENSO CORP·Filed 2023·Granted Dec 23, 2025·0 cites·9 claims
- 0760US12476156B2Semiconductor chip and method for manufacturing the sameDENSO CORP·Filed 2022·Granted Nov 18, 2025·0 cites·4 claims
- 0858US12293945B2Semiconductor chip and method for manufacturing the sameDENSO CORP·Filed 2022·Granted May 6, 2025·0 cites·9 claims
- 0958US12194570B2Laser processing method, semiconductor member manufacturing method, and laser processing deviceNATIONAL UNIV CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM·Filed 2019·Granted Jan 14, 2025·0 cites·12 claims
- 1057US12472587B2Laser processing method, semiconductor member manufacturing method, and laser processing deviceNATIONAL UNIV CORPORATION TOKAI NATIONAL HIGHER EDUCATION AND RESEARCH SYSTEM·Filed 2019·Granted Nov 18, 2025·0 cites·12 claims
- 1157US12467161B2Method for manufacturing semiconductor device, and semiconductor waferDENSO CORP·Filed 2022·Granted Nov 11, 2025·0 cites·12 claims
- 1257US11810783B2Gallium nitride semiconductor device and method for manufacturing the sameDENSO CORP·Filed 2021·Granted Nov 7, 2023·0 cites·8 claims
- 1353US12334339B2Manufacturing method of semiconductor deviceDENSO CORP·Filed 2023·Granted Jun 17, 2025·0 cites·9 claims
- 1453US2024194530A1Manufacturing method of semiconductor deviceDENSO CORP·Filed 2023·Application pending·0 cites
- 1553US2023230829A1Semiconductor wafer processing apparatus and method of manufacturing semiconductor elementDENSO CORP·Filed 2022·Application pending·0 cites
- 1652US7760785B2Group-III nitride semiconductor deviceNEC CORP·Filed 2004·Granted Jul 20, 2010·3 cites·2 claims
- 1752US2023238281A1Method of manufacturing gallium nitride substrateDENSO CORP·Filed 2023·Application pending·0 cites
- 1851US5963787AMethod of producing gallium nitride semiconductor light emitting deviceNEC CORP·Filed 1998·Granted Oct 5, 1999·17 cites·5 claims
- 1949US11784039B2Method for manufacturing gallium nitride semiconductor deviceDENSO CORP·Filed 2021·Granted Oct 10, 2023·0 cites·5 claims
- 2048US11810821B2Semiconductor chip and method for manufacturing the sameDENSO CORP·Filed 2021·Granted Nov 7, 2023·0 cites·6 claims
- 2145US6033490AGrowth of GaN layers on quartz substratesNEC CORP·Filed 1998·Granted Mar 7, 2000·11 cites·25 claims
- 2243US2010034231A1Semiconductor laserNEC ELECTRONICS CORP·Filed 2009·Application pending·0 cites
- 2341US7741654B2Group III nitride semiconductor optical deviceNEC CORP·Filed 2005·Granted Jun 22, 2010·0 cites·7 claims
- 2440US2006051939A1Nitride semiconductor substrate and nitride semiconductor device using sameNEC CORP·Filed 2004·Application pending·0 cites
- 2539US2006209395A1Semiconductor laser and method for manufacturing the sameNEC CORP·Filed 2004·Application pending·0 cites
- 2637US2011261854A1Semiconductor laser and manufacturing method thereofRENESAS ELECTRONICS CORP·Filed 2011·Application pending·0 cites
- 2735US8441029B2Light emitting element including side surface dielectric layer for avoiding impurity adhesionSASAOKA CHIAKI·Filed 2011·Granted May 14, 2013·0 cites·4 claims
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