Inventor · disambiguated record
Corey Overgaard
Also filed as: OVERGAARD COREY · OVERGAARD COREY D · OVERGAARD COREY DANIEL
9 granted patents·8 pending applications·282 citations·filing 1997–2003
91Inventor score
Top patents by PatentIndex Score
17 records- 0188US6113690AMethod of preparing crystalline alkaline earth metal oxides on a Si substrateMOTOROLA INC·Filed 1998·Granted Sep 5, 2000·61 cites·27 claims
- 0286US6241821B1Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with siliconMOTOROLA INC·Filed 1999·Granted Jun 5, 2001·45 cites·22 claims
- 0385US6224669B1Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with siliconMOTOROLA INC·Filed 2000·Granted May 1, 2001·35 cites·36 claims
- 0473US6667196B2Method for real-time monitoring and controlling perovskite oxide film growth and semiconductor structure formed using the methodMOTOROLA INC·Filed 2001·Granted Dec 23, 2003·16 cites·41 claims
- 0569US5937285AMethod of fabricating submicron FETs with low temperature group III-V materialMOTOROLA INC·Filed 1997·Granted Aug 10, 1999·38 cites·25 claims
- 0665US6030453AIII-V epitaxial wafer productionMOTOROLA INC·Filed 1997·Granted Feb 29, 2000·31 cites·10 claims
- 0763US6110840AMethod of passivating the surface of a Si substrateMOTOROLA INC·Filed 1998·Granted Aug 29, 2000·28 cites·25 claims
- 0862US6764864B1BST on low-loss substrates for frequency agile applicationsFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jul 20, 2004·8 cites·14 claims
- 0956US6159834AMethod of forming a gate quality oxide-compound semiconductor structureMOTOROLA INC·Filed 1998·Granted Dec 12, 2000·20 cites·27 claims
- 1042US2001023660A1Method for fabricating a semiconductor structure having a crystalline alkaline earth metal oxide interface with siliconMOTOROLA INC·Filed 2001·Application pending·0 cites
- 1136US2003022431A1Structure including a monocrystalline perovskite oxide layer and method of forming the sameMOTOROLA INC·Filed 2001·Application pending·0 cites
- 1236US2003022525A1Semiconductor structure and device including a monocrystalline layer formed overlying a compliant substrate and a method of forming the sameMOTOROLA INC·Filed 2001·Application pending·0 cites
- 1336US2004079285A1Automation of oxide material growth in molecular beam epitaxy systemsMOTOROLA INC·Filed 2002·Application pending·0 cites
- 1435US2002140013A1Structure and method for fabricating semiconductor structures and devices utilizing a stable templateMOTOROLA INC·Filed 2001·Application pending·0 cites
- 1535US2002089023A1Low leakage current metal oxide-nitrides and method of fabricating sameMOTOROLA INC·Filed 2001·Application pending·0 cites
- 1634US2002163024A1Structure and method for fabricating semiconductor structures and devices ultilizing lateral epitaxial overgrowth of a monocrystallaline material layer on a compliant substrateMOTOROLA INC·Filed 2001·Application pending·0 cites
- 1733US2002167005A1Semiconductor structure including low-leakage, high crystalline dielectric materials and methods of forming sameMOTOROLA INC·Filed 2001·Application pending·0 cites
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