Inventor

TIHANYI JENOE

DE147 patents

⚠️ This page may combine multiple inventors who share the name “TIHANYI JENOE”. Patents are grouped by organization below to help distinguish them — per-person disambiguation is on the roadmap.

TIHANYI JENOE

SIEMENS AG

MOS field-effect transistor with auxiliary electrode

Edge structure and drift region for a semiconductor component and production method

Field effect-controllable semiconductor component

Power MOSFET

MISFET with input amplifier

High-voltage edge termination for planar structures

Lateral high-voltage transistor

MOSFET switch with inductive load

Semiconductor component with a circuit for driving an electrical load

Bipolar transistor which can be controlled by field effect and method for producing the same

Field-effect-controllable, vertical semiconductor component and method for producing the same

Circuit configuration for detecting a load current of a power semiconductor component with a source-side load

Lateral high-voltage sidewall transistor

FET with source-substrate connection and method for producing the FET

Temperature-protected electrical switch component

CMOS comparator

Trigger circuit for a power fet having a source-side load

Power transistor with short-circuit protection

Circuit arrangement for regulating the load current of a power MOSFET

Trigger circuit for a power FET with a load on the source side

Vertical mis-field effect transistor with low forward resistance

Drive circuit for a power MOSFET with load at the source side

Circuit limiting the load current of a power MOSFET

Circuitry for detecting a short circuit of a load in series with an fet

Bipolar transistor controllable by field effect

Overtemperature detection of power semiconductor components

Drive circuit for a power MOSFET with source-side load

Circuit configuration for capturing the load current of a power semiconductor component with a load on the source side

Switch with series-connected MOS-FETs

INFINEON TECHNOLOGIES AG

Semiconductor component with metal-semiconductor junction with low reverse current

Silicon on insulator high-voltage switch

Field-effect transistor having a high packing density and method for fabricating it

High voltage resistant edge structure for semiconductor components

Power transistor

Semiconductor component which can be controlled by a field effect

Circuit arrangement having a load transistor and a voltage limiting circuit and method for driving a load transistor

Non-volatile memory cell

Vertical semiconductor component having a reduced electrical surface field

Transistor having compensation zones enabling a low on-resistance and a high reverse voltage

Field effect-controllable semiconductor component with two-directional blocking, and a method of producing the semiconductor component

Semiconductor switching element with integrated Schottky diode and process for producing the switching element and diode

Power MOSFET

Silicon carbide junction field effect transistor

Method for producing a field-effect-controllable, vertical semiconductor component

Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zone

Metal semiconductor contact, semiconductor component, integrated circuit arrangement and method

Semiconductor component for high reverse voltages in conjunction with a low on resistance and method for fabricating a semiconductor component

Semiconductor module

Method and device for transferring a signal from a signal source to a signal sink in a system

(unassigned)

Vertical power MOSFET