Inventor · disambiguated record

Yai-Fen Lin

Also filed as: LIN YAI-FEN

67 granted patents·1,578 citations·filing 1997–2005

99Inventor score

Technology areasH10D H10B H10W G11C Y10S

Files withTAIWAN SEMICONDUCTOR MFG67

Top patents by PatentIndex Score

67 records

0193US6159801AMethod to increase coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 12, 2000·84 cites·33 claims
0291US6380583B1Method to increase coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 30, 2002·46 cites·6 claims
0391US6312989B1Structure with protruding source in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Nov 6, 2001·43 cites·20 claims
0490US6228695B1Method to fabricate split-gate with self-aligned source and self-aligned floating gate to control gateTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 8, 2001·76 cites·25 claims
0589US6117733APoly tip formation and self-align source process for split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Sep 12, 2000·85 cites·32 claims
0686US6724036B1Stacked-gate flash memory cell with folding gate and increased coupling ratioTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 20, 2004·40 cites·4 claims
0785US6153494AMethod to increase the coupling ratio of word line to floating gate by lateral coupling in stacked-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Nov 28, 2000·70 cites·28 claims
0883US6417049B1Split gate flash cell for multiple storageTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jul 9, 2002·28 cites·5 claims
0983US6214662B1Forming self-align source line for memory arrayTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 10, 2001·27 cites·48 claims
1082US6358796B1Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolationTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 19, 2002·46 cites·24 claims
1181US6441429B1Split-gate flash memory device having floating gate electrode with sharp peakTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Aug 27, 2002·24 cites·10 claims
1280US6017795AMethod of fabricating buried source to shrink cell dimension and increase coupling ratio in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jan 25, 2000·37 cites·29 claims
1379US6538277B2Split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 25, 2003·23 cites·5 claims
1479US6229176B1Split gate flash with step poly to improve program speedTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 8, 2001·37 cites·8 claims
1579US5858840AMethod of forming sharp beak of poly by nitrogen implant to improve erase speed for split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Jan 12, 1999·37 cites·12 claims
1678US6127229AProcess of forming an EEPROM device having a split gateTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Oct 3, 2000·36 cites·10 claims
1778US5879992AMethod of fabricating step poly to improve program speed in split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Mar 9, 1999·38 cites·22 claims
1877US6060360AMethod of manufacture of P-channel EEprom and flash EEprom devicesTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted May 9, 2000·37 cites·34 claims
1976US6380035B1Poly tip formation and self-align source process for split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 30, 2002·19 cites·32 claims
2076US6259131B1Poly tip and self aligned source for split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 10, 2001·37 cites·9 claims
2176US6246089B1P-channel EEPROM devicesTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 12, 2001·20 cites·11 claims
2275US7417278B2Method to increase coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2005·Granted Aug 26, 2008·4 cites·16 claims
2375US6753569B2Method to fabricate a non-smiling effect structure in split-gate flash with self-aligned isolationTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jun 22, 2004·18 cites·9 claims
2475US6410957B1Method of forming poly tip to improve erasing and programming speed in split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 25, 2002·13 cites·6 claims
2574US5970371AMethod of forming sharp beak of poly to improve erase speed in split-gate flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 19, 1999·31 cites·20 claims
2673US6674118B2PIP capacitor for split-gate flash processTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jan 6, 2004·13 cites·6 claims
2773US6333228B1Method to improve the control of bird's beak profile of poly in split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Dec 25, 2001·19 cites·53 claims
2873US6165845AMethod to fabricate poly tip in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Dec 26, 2000·29 cites·19 claims
2973US6130132AClean process for manufacturing of split-gate flash memory device having floating gate electrode with sharp peakTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 10, 2000·29 cites·20 claims
3072US6090668AMethod to fabricate sharp tip of poly in split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 18, 2000·34 cites·16 claims
3172US6005809AProgram and erase method for a split gate flash EEPROMTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Dec 21, 1999·33 cites·44 claims
3271US6355527B1Method to increase coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 12, 2002·28 cites·21 claims
3371US6249454B1Split-gate flash cell for virtual ground architectureTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 19, 2001·23 cites·3 claims
3471US6124609ASplit gate flash memory with buried source to shrink cell dimension and increase coupling ratioTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 26, 2000·22 cites·4 claims
3571US6046086AMethod to improve the capacity of data retention and increase the coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Apr 4, 2000·35 cites·22 claims
3670US6465841B1Split gate flash memory device having nitride spacer to prevent inter-poly oxide damageTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 15, 2002·13 cites·4 claims
3769US6242308B1Method of forming poly tip to improve erasing and programming speed split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jun 5, 2001·21 cites·13 claims
3867US6635922B1Method to fabricate poly tip in split gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Oct 21, 2003·11 cites·4 claims
3967US6385089B2Split-gate flash cell for virtual ground architectureTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted May 7, 2002·13 cites·5 claims
4065US6534821B2Structure with protruding source in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Mar 18, 2003·8 cites·10 claims
4165US6093607AMethod of forming sharp beak of poly by oxygen/fluorine implant to improve erase speed for split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Jul 25, 2000·22 cites·22 claims
4263US7001809B2Method to increase coupling ratio of source to floating gate in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Feb 21, 2006·7 cites·10 claims
4363US6309928B1Split-gate flash cellTAIWAN SEMICONDUCTOR MFG·Filed 1998·Granted Oct 30, 2001·25 cites·35 claims
4462US6504206B2Split gate flash cell for multiple storageTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Jan 7, 2003·8 cites·5 claims
4562US6093608ASource side injection programming and tip erasing P-channel split gate flash memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Jul 25, 2000·18 cites·10 claims
4661US6573555B1Source side injection programming and tip erasing P-channel split gate flash memory cellTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Jun 3, 2003·8 cites·10 claims
4760US6277686B1PIP capacitor for split-gate flash processTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Aug 21, 2001·16 cites·21 claims
4860US5972753AMethod of self-align cell edge implant to reduce leakage current and improve program speed in split-gate flashTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Oct 26, 1999·16 cites·15 claims
4960US5940706AProcess for preventing misalignment in split-gate flash memory cellTAIWAN SEMICONDUCTOR MFG·Filed 1997·Granted Aug 17, 1999·20 cites·16 claims
5059US6509603B2P-channel EEPROM and flash EEPROM devicesTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jan 21, 2003·9 cites·9 claims

Showing the top 50 of 67 patent records by PatentIndex Score.

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