Inventor · disambiguated record
Tong-Hsin Lee
Also filed as: LEE TONG-HSIN
19 granted patents·1 pending application·300 citations·filing 1998–2003
95Inventor score
Top patents by PatentIndex Score
20 records- 0173US6169017B1Method to increase contact areaUNITED SILICON INC·Filed 1999·Granted Jan 2, 2001·33 cites·30 claims
- 0272US6069032ASalicide processUNITED SILICON INC·Filed 1999·Granted May 30, 2000·32 cites·20 claims
- 0369US6090698AFabrication method for an insulation structure having a low dielectric constantUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jul 18, 2000·38 cites·29 claims
- 0466US6534354B1Method of manufacturing MOS transistor with fluorine implantation at a low energyUNITED MICROELECTRONICS CORP·Filed 2001·Granted Mar 18, 2003·9 cites·5 claims
- 0565US6251737B1Method of increasing gate surface area for depositing silicide materialUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jun 26, 2001·25 cites·30 claims
- 0665US6174782B1Method of fabricating lower electrode of capacitorUNITED MICROELECTRONICS CORP·Filed 1999·Granted Jan 16, 2001·32 cites·18 claims
- 0758US6127228AMethod of forming buried bit lineUNITED SILICON INC·Filed 1999·Granted Oct 3, 2000·24 cites·8 claims
- 0857US6093600AMethod of fabricating a dynamic random-access memory deviceUNITED SILICON INC·Filed 1999·Granted Jul 25, 2000·24 cites·10 claims
- 0954US6150237AMethod of fabricating STIUNITED SILICON INC·Filed 1999·Granted Nov 21, 2000·19 cites·17 claims
- 1053US6060361AMethod for preventing dopant diffusion in dual gate deviceUNITED SILICON INC·Filed 1998·Granted May 9, 2000·14 cites·9 claims
- 1152US6635537B2Method of fabricating gate oxideUNITED MICROELECTRONICS CORP·Filed 2001·Granted Oct 21, 2003·6 cites·19 claims
- 1252US6300238B1Method of fabricating node contact openingUNITED MICROELECTRONICS CORP·Filed 1999·Granted Oct 9, 2001·12 cites·8 claims
- 1349US6569726B1Method of manufacturing MOS transistor with fluoride implantation on silicon nitride etching stop layerUNITED MICROELECTRONICS CORP·Filed 2002·Granted May 27, 2003·2 cites·5 claims
- 1448US6664172B2Method of forming a MOS transistor with improved threshold voltage stabilityUNITED MICROELECTRONICS CORP·Filed 2002·Granted Dec 16, 2003·2 cites·19 claims
- 1547US6214741B1Method of fabricating a bit line of flash memoryUNITED SILICON INC·Filed 1999·Granted Apr 10, 2001·10 cites·20 claims
- 1644US6228756B1Method of manufacturing inter-metal dielectric layerUNITED MICROELECTRONICS CORP·Filed 1999·Granted May 8, 2001·11 cites·10 claims
- 1740US5932333AMethod for manufacturing charge storage electrodeUNITED SILICON INC·Filed 1998·Granted Aug 3, 1999·6 cites·28 claims
- 1834US2004166625A1Method for increasing the Beta of PNP BJT device in CMOS processUNITED MICROELECTRONICS CORP·Filed 2003·Application pending·0 cites
- 1930US6043154AMethod for manufacturing charge storage electrodeUNITED SILICON INC·Filed 1998·Granted Mar 28, 2000·0 cites·20 claims
- 2029US6133091AMethod of fabricating a lower electrode of capacitorUNITED SILICON INC·Filed 1999·Granted Oct 17, 2000·1 cites·20 claims
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