Inventor · disambiguated record
Martin E. Garnett
Also filed as: GARNETT MARTIN E
12 granted patents·1 pending application·286 citations·filing 1990–2012
91Inventor score
Top patents by PatentIndex Score
13 records- 0190US8304825B2Vertical discrete devices with trench contacts and associated methods of manufacturingGARNETT MARTIN E·Filed 2010·Granted Nov 6, 2012·22 cites·14 claims
- 0289US5517046AHigh voltage lateral DMOS device with enhanced drift regionMICREL INC·Filed 1995·Granted May 14, 1996·126 cites·20 claims
- 0378US5753391AMethod of forming a resistor having a serpentine pattern through multiple use of an alignment keyed maskMICREL INC·Filed 1995·Granted May 19, 1998·50 cites·7 claims
- 0466US8809988B2Low leakage and/or low turn-on voltage Schottky diodeYOO JI-HYOUNG·Filed 2009·Granted Aug 19, 2014·2 cites·16 claims
- 0566US8772867B2High voltage high side DMOS and the method for forming thereofMONOLITHIC POWER SYSTEMS INC·Filed 2012·Granted Jul 8, 2014·2 cites·15 claims
- 0666US5556796ASelf-alignment technique for forming junction isolation and wellsMICREL INC·Filed 1995·Granted Sep 17, 1996·35 cites·17 claims
- 0762US8598637B2High voltage junction field effect transistor with spiral field plateHSING MICHAEL R·Filed 2009·Granted Dec 3, 2013·2 cites·19 claims
- 0858US6815128B2Box-in-box field-to-field alignment structureMICREL INC·Filed 2002·Granted Nov 9, 2004·13 cites·11 claims
- 0957US7273761B2Box-in-box field-to-field alignment structureMICREL INC·Filed 2004·Granted Sep 25, 2007·4 cites·5 claims
- 1051US5047820ASemi self-aligned high voltage P channel FETMICREL INC·Filed 1990·Granted Sep 10, 1991·22 cites·7 claims
- 1147US6163140AStart-up circuit for voltage regulatorsMICREL INC·Filed 2000·Granted Dec 19, 2000·8 cites·16 claims
- 1231US6838350B2Triply implanted complementary bipolar transistorsMICREL INC·Filed 2003·Granted Jan 4, 2005·0 cites·14 claims
- 1331US2011068410A1Silicon die floorplan with application to high-voltage field effect transistorsGARNETT MARTIN E·Filed 2010·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →