Inventor · disambiguated record
Tat-Sing P. Chow
Also filed as: CHOW TAT-SING · CHOW TAT-SING P · CHOW TAT-SING PAUL
18 granted patents·1 pending application·1,122 citations·filing 1979–2015
96Inventor score
Files withGEN ELECTRIC12RENSSELAER POLYTECH INST3CHOW TAT-SING PAUL1FAIRCHILD SEMICONDUCTOR1FURUKAWA ELECTRIC CO LTD1
Top patents by PatentIndex Score
19 records- 0199US4801986AVertical double diffused metal oxide semiconductor VDMOS device with increased safe operating area and methodGEN ELECTRIC·Filed 1987·Granted Jan 31, 1989·329 cites·23 claims
- 0297US4823176AVertical double diffused metal oxide semiconductor (VDMOS) device including high voltage junction exhibiting increased safe operating areaGEN ELECTRIC·Filed 1987·Granted Apr 18, 1989·165 cites·32 claims
- 0396US5510281AMethod of fabricating a self-aligned DMOS transistor device using SiC and spacersGEN ELECTRIC·Filed 1995·Granted Apr 23, 1996·160 cites·12 claims
- 0495US5814859ASelf-aligned transistor device including a patterned refracting dielectric layerGEN ELECTRIC·Filed 1995·Granted Sep 29, 1998·133 cites·9 claims
- 0590US4998151APower field effect devices having small cell size and low contact resistanceGEN ELECTRIC·Filed 1989·Granted Mar 5, 1991·71 cites·14 claims
- 0689US4901127ACircuit including a combined insulated gate bipolar transistor/MOSFETGEN ELECTRIC·Filed 1988·Granted Feb 13, 1990·59 cites·31 claims
- 0788US4620211AMethod of reducing the current gain of an inherent bipolar transistor in an insulated-gate semiconductor device and resulting devicesGEN ELECTRIC·Filed 1984·Granted Oct 28, 1986·71 cites·7 claims
- 0879US9922838B2Selective, electrochemical etching of a semiconductorRENSSELAER POLYTECH INST·Filed 2015·Granted Mar 20, 2018·3 cites·18 claims
- 0975US8188514B2TransistorSUGIMOTO MASAHIRO·Filed 2009·Granted May 29, 2012·6 cites·4 claims
- 1075US7144797B2Semiconductor device having multiple-zone junction termination extension, and method for fabricating the sameRENSSELAER POLYTECH INST·Filed 2004·Granted Dec 5, 2006·23 cites·17 claims
- 1166US8159024B2High voltage (>100V) lateral trench power MOSFET with low specific-on-resistanceCHOW TAT-SING PAUL·Filed 2008·Granted Apr 17, 2012·5 cites·14 claims
- 1265US4227944AMethods of making composite conductive structures in integrated circuitsGEN ELECTRIC·Filed 1979·Granted Oct 14, 1980·21 cites·16 claims
- 1359US4862242ASemiconductor wafer with an electrically-isolated semiconductor deviceGEN ELECTRIC·Filed 1985·Granted Aug 29, 1989·25 cites·11 claims
- 1458US4333965AMethod of making integrated circuitsGEN ELECTRIC·Filed 1980·Granted Jun 8, 1982·21 cites·7 claims
- 1546US8350293B2Field effect transistor and method of manufacturing the sameFURUKAWA ELECTRIC CO LTD·Filed 2009·Granted Jan 8, 2013·0 cites·7 claims
- 1646US4429011AComposite conductive structures and method of making sameGEN ELECTRIC·Filed 1982·Granted Jan 31, 1984·12 cites·24 claims
- 1742US6656774B1Method to enhance operating characteristics of FET, IGBT, and MCT structuresFAIRCHILD SEMICONDUCTOR·Filed 1994·Granted Dec 2, 2003·8 cites·4 claims
- 1840US4717679AMinimal mask process for fabricating a lateral insulated gate semiconductor deviceGEN ELECTRIC·Filed 1986·Granted Jan 5, 1988·10 cites·31 claims
- 1937US2007032029A1Lateral trench power MOSFET with reduced gate-to-drain capacitanceRENSSELAER POLYTECH INST·Filed 2006·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →