Inventor · disambiguated record
Makoto Iida
Also filed as: IIDA MAKOTO
62 granted patents·8 pending applications·1,210 citations·filing 1974–2019
99Inventor score
Files withSHINETSU HANDOTAI KK37HITACHI LTD11MATSUSHITA ELECTRIC INDUSTRIAL CO LTD3SECURITY PATROLS CO3AISIN CORP1
Top patents by PatentIndex Score
70 records- 0197US5968264AMethod and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the sameSHINETSU HANDOTAI KK·Filed 1998·Granted Oct 19, 1999·106 cites·13 claims
- 0292US6261361B1Silicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing itSHINETSU HANDOTAI KK·Filed 2000·Granted Jul 17, 2001·34 cites·10 claims
- 0390US6445872B1Recording and reproducing apparatus for recording digital broadcast compression-coded data of video signals of a multiplicity of channelsMATSUSHITA ELECTRIC INDUSTRIAL CO LTD·Filed 1997·Granted Sep 3, 2002·169 cites·11 claims
- 0490US3935699ADoffing apparatus for spinning frameTOSHIBA SEIKI KABUSHIKI KAISHA·Filed 1974·Granted Feb 3, 1976·40 cites·10 claims
- 0588US6843847B1Silicon single crystal wafer and production method thereof and soi waferSHINETSU HANDOTAI KK·Filed 2000·Granted Jan 18, 2005·38 cites·21 claims
- 0688US6191009B1Method for producing silicon single crystal wafer and silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Feb 20, 2001·57 cites·19 claims
- 0786US6401643B2Sewn cover assembly and product foamed therewithTACHI S CO·Filed 2001·Granted Jun 11, 2002·25 cites·16 claims
- 0885US6364947B1Method and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the sameSHINETSU HANDOTAI KK·Filed 2000·Granted Apr 2, 2002·24 cites·2 claims
- 0984US6548035B1Silicon single crystal wafer for epitaxial wafer, epitaxial wafer, and methods for producing the same and evaluating the sameSHINETSU HANDOTAI KK·Filed 2000·Granted Apr 15, 2003·30 cites·29 claims
- 1084US6191675B1High voltage transformer and ignition transformer using the sameHITACHI LTD·Filed 1999·Granted Feb 20, 2001·39 cites·30 claims
- 1182US7069885B2Cylinder headISUZU MOTORS LTD·Filed 2003·Granted Jul 4, 2006·18 cites·15 claims
- 1282US6048395AMethod for producing a silicon single crystal having few crystal defectsSHINETSU HANDOTAI KK·Filed 1998·Granted Apr 11, 2000·35 cites·5 claims
- 1382US5491301AShielding method and circuit board employing the sameHITACHI LTD·Filed 1993·Granted Feb 13, 1996·73 cites·12 claims
- 1481US7258744B2Graphite heater for producing single crystal, apparatus for producing single crystal, and method for producing single crystalSHINETSU HANDOTAI KK·Filed 2003·Granted Aug 21, 2007·24 cites·58 claims
- 1581US6780067B1Combined integral molded product using pre-molded memberHITACHI LTD·Filed 2000·Granted Aug 24, 2004·26 cites·4 claims
- 1680US6902618B2Silicon single crystal wafer having void denuded zone on the surface and diameter of above 300 mm and its production methodSHINETSU HANDOTAI KK·Filed 2002·Granted Jun 7, 2005·15 cites·6 claims
- 1778US6348180B1Silicon single crystal wafer having few crystal defectsSHINETSU HANDOTAI KK·Filed 2000·Granted Feb 19, 2002·12 cites·3 claims
- 1874US6544490B1Silicon wafer and production method thereof and evaluation method for silicon waferSHINETSU HANDOTAI KK·Filed 2000·Granted Apr 8, 2003·20 cites·11 claims
- 1974US6299982B1Silicon single crystal wafer and method for producing silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Oct 9, 2001·25 cites·20 claims
- 2072US6077343ASilicon single crystal wafer having few defects wherein nitrogen is doped and a method for producing itSHINETSU HANDOTAI KK·Filed 1999·Granted Jun 20, 2000·33 cites·11 claims
- 2171US6599360B2Silicon wafer, method for determining production conditions of silicon single crystal and method for producing silicon waferSHINETSU HANDOTAI KK·Filed 2001·Granted Jul 29, 2003·13 cites·25 claims
- 2271US6334896B1Single-crystal silicon wafer having few crystal defects and method for manufacturing the sameSHINETSU HANDOTAI KK·Filed 1999·Granted Jan 1, 2002·23 cites·6 claims
- 2369US6159438AMethod and apparatus for manufacturing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers manufactured by the sameSHINETSU HANDOTAI KK·Filed 1999·Granted Dec 12, 2000·19 cites·3 claims
- 2468US4227577AFire-extinguishing systemSECURITY PATROLS CO·Filed 1978·Granted Oct 14, 1980·24 cites·10 claims
- 2567US5179601AMethod of manufacturing circuit structure by insert molding of electric and/or optical transmission mediumHITACHI LTD·Filed 1991·Granted Jan 12, 1993·30 cites·7 claims
- 2667US4734448APropylene polymer compositionIDEMITSU PETROCHEMICAL CO·Filed 1986·Granted Mar 29, 1988·20 cites·8 claims
- 2766US6986502B2Throttle bodyHITACHI CAR ENG CO LTD·Filed 2001·Granted Jan 17, 2006·5 cites·5 claims
- 2866US6544332B1Method for manufacturing silicon single crystal, silicon single crystal manufactured by the method, and silicon waferSHINETSU HANDOTAI KK·Filed 2000·Granted Apr 8, 2003·6 cites·15 claims
- 2964US6197109B1Method for producing low defect silicon single crystal doped with nitrogenSHINETSU HANDOTAI KK·Filed 1999·Granted Mar 6, 2001·17 cites·8 claims
- 3063US6665123B2ProjectorHITACHI LTD·Filed 2002·Granted Dec 16, 2003·11 cites·8 claims
- 3162US6120599ASilicon single crystal wafer having few crystal defects, and method for producing the sameSHINETSU HANDOTAI KK·Filed 1999·Granted Sep 19, 2000·13 cites·4 claims
- 3262US5882397ACrystal pulling methodSHINETSU HANDOTAI KK·Filed 1997·Granted Mar 16, 1999·16 cites·2 claims
- 3361US7323048B2Method for producing a single crystal and a single crystalSHINETSU HANDOTAI KK·Filed 2004·Granted Jan 29, 2008·4 cites·40 claims
- 3460US7437926B2Air flow rate measuring deviceHITACHI LTD·Filed 2007·Granted Oct 21, 2008·4 cites·37 claims
- 3560US6066306ASilicon single crystal wafer having few crystal defects, and method RFO producing the sameSHINETSU HANDOTAI KK·Filed 1998·Granted May 23, 2000·12 cites·2 claims
- 3658US7582159B2Method for producing a single crystalSHINETSU HANDOTAI KK·Filed 2004·Granted Sep 1, 2009·3 cites·6 claims
- 3758US7571641B2Flow measure instrument, passage of flow measure and production methodHITACHI LTD·Filed 2007·Granted Aug 11, 2009·3 cites·20 claims
- 3858US5871578AMethods for holding and pulling single crystalSHINETSU HANDOTAI KK·Filed 1997·Granted Feb 16, 1999·13 cites·10 claims
- 3954US5071223ACircuit structure formed by insert molding of electric and/or optical transmission mediumHITACHI LTD·Filed 1990·Granted Dec 10, 1991·19 cites·12 claims
- 4054US4163215ASafety lock system for controlling access to an area in response to predetermined data inputsSECURITY PATROLS CO·Filed 1977·Granted Jul 31, 1979·15 cites·22 claims
- 4153US7316385B2Throttle bodyHITACHI LTD·Filed 2005·Granted Jan 8, 2008·2 cites·7 claims
- 4252US6841450B2Annealed wafer manufacturing method and annealed waferSHINETSU HANDOTAI KK·Filed 2001·Granted Jan 11, 2005·3 cites·24 claims
- 4352US6120598AMethod for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the methodSHINETSU HANDOTAI KK·Filed 1999·Granted Sep 19, 2000·8 cites·7 claims
- 4452US2019227529A1Product production management systemDAIKIN IND LTD·Filed 2017·Application pending·0 cites
- 4550US5964941ACrystal pulling method and apparatusSHIN ETSU HANDOTAI LTD·Filed 1997·Granted Oct 12, 1999·13 cites·9 claims
- 4649US5948164ASeed crystal holderSHINETSU HANDOTAI KK·Filed 1998·Granted Sep 7, 1999·13 cites·4 claims
- 4748US11048900B2Image reading device and methodHITACHI OMRON TERMINAL SOLUTIONS CORP·Filed 2019·Granted Jun 29, 2021·0 cites·4 claims
- 4848US4183409AAutomatic fire-extinguishing systemSECURITY PATROLS CO·Filed 1977·Granted Jan 15, 1980·10 cites·7 claims
- 4947US6027562AMethod for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the methodSHINETSU HANDOTAI KK·Filed 1998·Granted Feb 22, 2000·6 cites·6 claims
- 5047US2010031869A1System for Manufacturing Silicon Single Crystal and Method for Manufacturing Silicon Single Crystal Using this SystemSHINETSU HANDOTAI KK·Filed 2007·Application pending·0 cites
Showing the top 50 of 70 patent records by PatentIndex Score.
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