Inventor · disambiguated record
Michael James Manfra
Also filed as: MANFRA MICHAEL · MANFRA MICHAEL J · MANFRA MICHAEL JAMES
21 granted patents·7 pending applications·230 citations·filing 1980–2024
94Inventor score
Files withMICROSOFT TECHNOLOGY LICENSING LLC18LUCENT TECHNOLOGIES INC3MASSACHUSETTS INST TECHNOLOGY2AGERE SYST GUARDIAN CORP1AGERE SYSTEMS INC1
Top patents by PatentIndex Score
28 records- 0192US6349454B1Method of making thin film resonator apparatusAGERE SYST GUARDIAN CORP·Filed 1999·Granted Feb 26, 2002·76 cites·5 claims
- 0288US12171147B2Semiconductor-superconductor hybrid device and its fabricationMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2021·Granted Dec 17, 2024·1 cites·21 claims
- 0386US11798988B2Graded planar buffer for nanowiresMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2020·Granted Oct 24, 2023·2 cites·26 claims
- 0486US11201273B2Semiconductor-superconductor heterostructureMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2019·Granted Dec 14, 2021·4 cites·20 claims
- 0583US11127820B2Quantum well field-effect transistor and method for manufacturing the sameMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2019·Granted Sep 21, 2021·4 cites·16 claims
- 0680US11211543B2Semiconductor-superconductor hybrid device and its fabricationMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2020·Granted Dec 28, 2021·1 cites·11 claims
- 0778US6495409B1MOS transistor having aluminum nitride gate structure and method of manufacturing sameAGERE SYSTEMS INC·Filed 1999·Granted Dec 17, 2002·43 cites·30 claims
- 0876US2024315148A1Semiconductor-superconductor hybrid device and its fabricationMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2024·Application pending·0 cites
- 0975US12283483B2Sag nanowire growth with a planarization processMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2024·Granted Apr 22, 2025·0 cites·17 claims
- 1075US12108688B2Forming semiconductor-superconductor hybrid devices with a horizontally-confined channelMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2023·Granted Oct 1, 2024·0 cites·20 claims
- 1174US4952527AMethod of making buffer layers for III-V devices using solid phase epitaxyMASSACHUSETTS INST TECHNOLOGY·Filed 1988·Granted Aug 28, 1990·39 cites·10 claims
- 1271US6699760B2Method for growing layers of group III-nitride semiconductor having electrically passivated threading defectsLUCENT TECHNOLOGIES INC·Filed 2002·Granted Mar 2, 2004·12 cites·10 claims
- 1370US2024292761A1Semiconductor-superconductor hybrid device, its manufacture and usesMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2024·Application pending·0 cites
- 1468US12119224B2SAG nanowire growth with ion implantationMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2022·Granted Oct 15, 2024·0 cites·7 claims
- 1566US11849639B2Forming semiconductor-superconductor hybrid devices with a horizontally-confined channelMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2021·Granted Dec 19, 2023·0 cites·20 claims
- 1666US7001813B2Layers of group III-nitride semiconductor made by processes with multi-step epitaxial growthsLUCENT TECHNOLOGIES INC·Filed 2003·Granted Feb 21, 2006·8 cites·12 claims
- 1763US12457911B2Semiconductor-superconductor hybrid devices with a horizontally-confined channel and methods of forming the sameMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2021·Granted Oct 28, 2025·0 cites·19 claims
- 1863US11488822B2SAG nanowire growth with ion implantationMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2020·Granted Nov 1, 2022·0 cites·14 claims
- 1962US2021126181A1Semiconductor-superconductor hybrid device, its manufacture and usesMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2019·Application pending·0 cites
- 2060US11929253B2SAG nanowire growth with a planarization processMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2020·Granted Mar 12, 2024·0 cites·16 claims
- 2159US5411914AIII-V based integrated circuits having low temperature growth buffer or passivation layersMASSACHUSETTS INST TECHNOLOGY·Filed 1992·Granted May 2, 1995·31 cites·22 claims
- 2258US11793089B2Durable hybrid heterostructures and methods for manufacturing the sameMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2019·Granted Oct 17, 2023·0 cites·20 claims
- 2355US2025212698A1Semiconductor-superconductor hybrid structureMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2024·Application pending·0 cites
- 2446US7038300B2Apparatus with improved layers of group III-nitride semiconductorLUCENT TECHNOLOGIES INC·Filed 2003·Granted May 2, 2006·3 cites·12 claims
- 2545US2021280763A1Superconductor heterostructures for semiconductor-superconductor hybrid structuresMICROSOFT TECHNOLOGY LICENSING LLC·Filed 2019·Application pending·0 cites
- 2641US2003030078A1MOS transistor having aluminum nitrade gate structure and method of manufacturing sameFiled 2002·Application pending·0 cites
- 2736US2013140517A1Thin and Flexible Gallium Nitride and Method of Making the SameTANG LIANG·Filed 2012·Application pending·0 cites
- 2825US4323422AMethod for preparing optically flat damage-free surfacesCALAWA ARTHUR R·Filed 1980·Granted Apr 6, 1982·6 cites·2 claims
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