Inventor · disambiguated record
Jean-Sebastien Materne Lehn
Also filed as: LEHN JEAN-SEBASTIEN · LEHN JEAN-SEBASTIEN M · LEHN JEAN-SEBASTIEN MATERNE · LEHN JEAN-SÉBASTIEN
5 granted patents·7 pending applications·54 citations·filing 2006–2024
76Inventor score
Top patents by PatentIndex Score
12 records- 0193US10995405B2Deposition of molybdenum thin films using a molybdenum carbonyl precursorMERCK PATENT GMBH·Filed 2017·Granted May 4, 2021·15 cites·18 claims
- 0292US7638645B2Metal (IV) tetra-amidinate compounds and their use in vapor depositionHARVARD COLLEGE·Filed 2006·Granted Dec 29, 2009·34 cites·31 claims
- 0391US11230764B2Methods of atomic layer deposition for selective film growthMERCK PATENT GMBH·Filed 2018·Granted Jan 25, 2022·5 cites·20 claims
- 0473US12473646B2Methods for depositing carbon conducting films by atomic layer depositionMICRON TECHNOLOGY INC·Filed 2022·Granted Nov 18, 2025·0 cites·18 claims
- 0568US2025320600A1Forming an indium chalcogenide filmMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0666US2024425983A1Methods for depositing silicon films by atomic layer depositionMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0764US12448681B2Methods of forming molybdenum-containing films deposited on elemental metal filmsMERCK PATENT GMBH·Filed 2021·Granted Oct 21, 2025·0 cites·9 claims
- 0864US2024287677A1Atomic layer deposition using tin-based or germanium-based precursorsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0960US2025059646A1Methods for depositing germanium films by atomic layer depositionMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 1050US2022341039A1Ruthenium pyrazolate precursor for atomic layer deposition and similar processesMERCK PATENT GMBH·Filed 2020·Application pending·0 cites
- 1148US2023304147A1Methods of forming a metal carbide or a metal carbide material, methods of forming an electronic device, and related electronic devices and systemsMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 1246US2023089523A1Inherently ferroelectric hf-zr containing filmsMERCK PATENT GMBH·Filed 2021·Application pending·0 cites
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