Inventor · disambiguated record
Bo-Yu Lai
Also filed as: LAI BO YU
35 granted patents·15 pending applications·96 citations·filing 2014–2025
96Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD45REALTEK SEMICONDUCTOR CORP4TAIWAN SEMICONDUCTOR SEMICONDUCTOR MFG CO LTD1
Top patents by PatentIndex Score
50 records- 0198US10062784B1Self-aligned gate hard mask and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 28, 2018·31 cites·20 claims
- 0297US11855097B2Air gap formation between gate spacer and epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Dec 26, 2023·2 cites·20 claims
- 0396US11862713B2Conformal transfer doping method for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 2, 2024·2 cites·20 claims
- 0496US10276691B2Conformal transfer doping method for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 30, 2019·11 cites·20 claims
- 0595US10037923B1Forming transistor by selectively growing gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jul 31, 2018·9 cites·20 claims
- 0695US9450046B2Semiconductor structure with fin structure and wire structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Sep 20, 2016·14 cites·20 claims
- 0793US11901408B2Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 13, 2024·2 cites·20 claims
- 0893US11456295B2Air gap formation between gate spacer and epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 27, 2022·2 cites·20 claims
- 0992US10283624B1Semiconductor structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted May 7, 2019·7 cites·20 claims
- 1091US10923565B2Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Feb 16, 2021·5 cites·20 claims
- 1187US2025324683A1Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1286US12218138B2Air gap formation between gate spacer and epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 4, 2025·0 cites·20 claims
- 1386US2025349614A1Conductive feature of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1485US12376351B2Self-aligned contact air gap formationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Jul 29, 2025·0 cites·20 claims
- 1585US9847329B2Structure of fin feature and method of making sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Dec 19, 2017·5 cites·20 claims
- 1684US12237230B2Semiconductor device with leakage current suppression and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 25, 2025·1 cites·20 claims
- 1783US10833170B2Low-k gate spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·2 cites·20 claims
- 1882US2025311381A1Semiconductor device with leakage current suppression and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1981US10490650B2Low-k gate spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 26, 2019·2 cites·20 claims
- 2081US2025366042A1Gate-all-around devices and methods for manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2179US12363989B2Semiconductor device with leakage current suppression and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jul 15, 2025·0 cites·20 claims
- 2279US2024379425A1Conductive feature of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2379US2024113202A1Low-K Gate Spacer and Methods for Forming the SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 2476US12266655B2Transistors with recessed silicon cap and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 1, 2025·0 cites·20 claims
- 2576US12249640B2Conformal transfer doping method for Fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 11, 2025·0 cites·20 claims
- 2676US11296077B2Transistors with recessed silicon cap and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Apr 5, 2022·1 cites·20 claims
- 2773US2025311301A1Gate-all-around devices and methods for manufacturing sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2873US2025169170A1Transistors with Recessed Silicon Cap and Method Forming SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2971US12300540B2Conductive feature of semiconductor device and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 13, 2025·0 cites·20 claims
- 3071US11855182B2Low-k gate spacer and methods for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 26, 2023·0 cites·20 claims
- 3171US11205724B2Self-aligned gate hard mask and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 21, 2021·0 cites·20 claims
- 3270US11476352B2Conformal transfer doping method for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Oct 18, 2022·0 cites·20 claims
- 3370US2025212493A1Semiconductor devices with a source/drain barrier layer and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3469US12191370B2Semiconductor device with tunable channel layer usage and methods of fabrication thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 3568US11133229B2Forming transistor by selectively growing gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 28, 2021·0 cites·20 claims
- 3667US2025176215A1Semiconductor Device With Tunable Channel Layer Usage And Methods Of Fabrication ThereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3766US10861753B2Air gap formation between gate spacer and epitaxy structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·0 cites·20 claims
- 3865US10868151B2Conformal transfer doping method for fin-like field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·20 claims
- 3964US11626504B2Fin field effect transistor (FinFET) device structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Apr 11, 2023·0 cites·20 claims
- 4062US12278145B2Semiconductor devices with a source/drain barrier layer and methods of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Apr 15, 2025·0 cites·20 claims
- 4162US10686075B2Self-aligned gate hard mask and method forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jun 16, 2020·0 cites·20 claims
- 4262US2025363964A1Media docking deviceREALTEK SEMICONDUCTOR CORP·Filed 2025·Application pending·0 cites
- 4362US2025374632A1Structure and formation method of semiconductor device with semiconductor nanostructuresTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 4461US10535569B2Forming transistor by selectively growing gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·0 cites·20 claims
- 4560US10833167B2Fin field effect transistor (finFET) device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 10, 2020·0 cites·20 claims
- 4657US12323660B2Media docking device and media transfer methodREALTEK SEMICONDUCTOR CORP·Filed 2023·Granted Jun 3, 2025·0 cites·18 claims
- 4757US2025151357A1Semiconductor fabrication processes for defect reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 4854US12468496B2Media docking device and media docking methodREALTEK SEMICONDUCTOR CORP·Filed 2024·Granted Nov 11, 2025·0 cites·20 claims
- 4953US2024113201A1Multi-gate device inner spacer and methods thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 5053US2024396797A1Docking station and display deviceREALTEK SEMICONDUCTOR CORP·Filed 2024·Application pending·0 cites
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →