Inventor · disambiguated record
John Chaffee
Also filed as: CHAFFEE JOHN · CHAFFEE JOHN T · CHAFFEE JOHN TAYLOR
6 granted patents·4 pending applications·35 citations·filing 1988–2013
80Inventor score
Files withENICKS DARWIN G4ATMEL CORP2AEROFLEX COLORADO SPRINGS INC1AEROFLEX UTMC MICROELECTRONICS1UNITED TECHNOLOGIES CORP1
Top patents by PatentIndex Score
10 records- 0172US8530934B2Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related theretoENICKS DARWIN G·Filed 2010·Granted Sep 10, 2013·3 cites·15 claims
- 0251US9012308B2Integrated circuit structures containing a strain-compensated compound semiconductor layer and methods and systems related theretoATMEL CORP·Filed 2013·Granted Apr 21, 2015·0 cites·20 claims
- 0348US6855618B2Radiation hardened semiconductor deviceAEROFLEX COLORADO SPRINGS INC·Filed 2002·Granted Feb 15, 2005·2 cites·19 claims
- 0446US6511893B1Radiation hardened semiconductor deviceAEROFLEX UTMC MICROELECTRONICS·Filed 1998·Granted Jan 28, 2003·13 cites·39 claims
- 0545US2009189159A1Gettering layer on substrateATMEL CORP·Filed 2008·Application pending·0 cites
- 0641US6063690AMethod for making recessed field oxide for radiation hardened microelectronicsUTMC MICROELECTRONICS SYSTEMS·Filed 1997·Granted May 16, 2000·14 cites·20 claims
- 0738US2007148890A1Oxygen enhanced metastable silicon germanium film layerENICKS DARWIN G·Filed 2005·Application pending·0 cites
- 0838US2007102834A1Strain-compensated metastable compound base heterojunction bipolar transistorENICKS DARWIN G·Filed 2005·Application pending·0 cites
- 0934US2007102729A1Method and system for providing a heterojunction bipolar transistor having SiGe extensionsENICKS DARWIN G·Filed 2005·Application pending·0 cites
- 1028US5037781AMulti-layered field oxide structureUNITED TECHNOLOGIES CORP·Filed 1988·Granted Aug 6, 1991·3 cites·8 claims
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →